Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To precisely form a fine opening hole without a photoetching process by forming a metallic silicide in the desired shape on a polycrystal semiconductor layer on a semiconductor substrate, transforming the periphery of said metallic silicide into oxide, thereafter removing it. CONSTITUTION:On a P type semiconductor substrate 10 on which an island of an N type semiconductor layer is provided, are provided a polycrystal Si film 11, an Si nitride film 13, and a thick Si oxide film 15; and a P type base region 16 is formed. Then, platinum 17 is deposited on the entire substrate 1. Platinum silicide 18 is formed by the heat treatment. At this time, the conditions for the heat treatment are adequately selected, so that the silicide 18 is formed on the predetermined distance from all sides of the layer 11. Then, the platinum 17 which has not contributed in forming the platinum silicide is removed. Thereafter, impurites are introduced through the layer 11 by self-alignment, thereby a P active base region 19 is formed. Then, the layer 11 is transformed into Si oxide 20. After the film 13 has been removed, the silicide 18 is removed, thereby a window for forming an emitter 21 is opened.，下面是Manufacture of semiconductor device专利的具体信息内容。
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| LDMOSFET器件及其制造方法 | 2020-05-11 | 182 |
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