Liquid-phase epitaxial growing
专利汇可以提供Liquid-phase epitaxial growing专利检索，专利查询，专利分析的服务。并且PURPOSE: To produce an epitaxial layer which has few defects and is appropriate to a laser light source, by coating an oxide film on a simiconductor substrate, bringing the oxide film into contact with a melting-back liquid to remove only the oxide film and clean the surface of the substrate and bringing the substrate into contact with a growing liquid.
CONSTITUTION: A thin SiO
2 film 3 is coated at low temperature on an InP crystal substrate 1 by sputtering or the like. The substrate is then housed in a recess on a rest made of carbon. A growing boat 6 made of carbon and having cells for the melting-back liquid 4 and the growing liquid 5 is placed on the rest. The substrate 1 is heated to a temperature of about 600°C and displaced to thoroughly saturate phosphorus. The substrate is then brought into contact with the melting-back indium liquid 4 put in a quasi-balanced thermal state so that only the thin film 3 is removed. As a result, the surface of the substrate 1 is cleaned. Since the liquid 4 and the substrate 1 are in a quasi-balanced thermal state to each other, no epitaxial layer is grown. The substrate 1 is then moved into touch with the growing InP liquid so that the temperature of the substrate is reduced to a prescribed level. As a result, the epitaxial InP layer is grown.
COPYRIGHT: (C)1980,JPO&Japio，下面是Liquid-phase epitaxial growing专利的具体信息内容。
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