Semiconductor light receiving device
专利汇可以提供Semiconductor light receiving device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain high speed response all the time, by covering a region, in which an intrinsic semiconductor layer is not converted into a depletion layer, by a light shielding layer.
CONSTITUTION: A metal layer 11, which is a light shielding layer, is provided on an insulating film 5. The size of the metal layer 11 is determined so as to cover a region 9, which is not converted into a depletion layer. Namely, the inner end side of the metal layer 11 covers a P-N junction part 7. The outer end side is extended to a channel cutting region 4. Therefore, incident light to the region 9 can be shielded. Yield of an electric charge component, whose moving speed is slow, in the vicinity of the P-N junction can be prevented. Therefore, hole-electron pairs, which are excited by the incident light, are generated only in the depletion layer, which is moved under a high electric field. Thus, high speed response can be always obtained.
COPYRIGHT: (C)1987,JPO&Japio，下面是Semiconductor light receiving device专利的具体信息内容。
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