Semiconductor memory device
专利汇可以提供Semiconductor memory device专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent the storing level drop because of carriers produced by the alpha ray irradiation by preparing a carrier trapping layer separated from the thick insulating film partly buried in a semiconductor layer. CONSTITUTION:An N layer 11 and a P layer 12 are laminated on a P type Si substrate 10 and a field SiO2 film 13 is made lest the N layer 11 is not touched. On the insulating film 14 a clamped potential line 15, an inter layer insulating film 16 and a gate electrode 17 are prepared and the N source 18 is prepared. A P layer 12A directly under the electrode 17 acts as a channel of an insulating gate FET and the part corresponding to a drain forms the capacitance for information storage use together with the insulating film 14 and a clamped potential line 15. Positive potential is given to trap electrons within the N layer 11. According to said constitution, even if alpha rays coincide upon a memory cell forming a hole-electron pair, electrons are trapped by the N layer 11, the quantity of electrons, which are absorbed into the depletion layer DP because of information storage, sharply drops. Consequently the storing drop and the logic level inversion can be previously prevented.，下面是Semiconductor memory device专利的具体信息内容。
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