| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | 高热导率氮化硅电路衬底和使用它的半导体器件 | CN96121115.6 | 1996-09-27 | CN1149667C | 2004-05-12 | 角野裕康; 堀口昭宏; 加曾利光男; 上野文雄 |
| 本发明公开了一种高热导率氮化硅电路衬底，它包括25℃时热导率为60W/m.K以上的氮化硅陶瓷板，和通过中间层与氮化硅陶瓷板连接的金属电路板。中间层包含氧和选自由Ti、Zr、Hf、Nb和Al组成的组中的至少一种元素。及用该衬底的半导体器件。 | ||||||
| 122 | 多孔工件的浸渍方法 | CN99814233.6 | 1999-12-07 | CN1113714C | 2003-07-09 | K·雷泽尔 |
| 为了用液态浸渍剂浸渍多孔工件，将预制工件安置在精确匹配地加工而成的注入模或压铸模中并且利用常见的注入机或压铸机把液态浸渍剂注入模具中。 | ||||||
| 123 | 生产化学结合陶瓷产品的方法和产品 | CN01807972.5 | 2001-04-09 | CN1422141A | 2003-06-04 | L·赫曼森; L·克拉夫特; B·克加尔斯塔德; D·赫曼森 |
| 一种通过在一种或多种粉状粘合剂和与这些粘合剂反应的液体之间的反应生产化学结合陶瓷材料的方法，将含一定数量粉末的该粘合相悬浮在该液体中使得将所有的粉末颗粒与液体充分接触，因此将这样获得的淤浆排液使得在允许材料通过该粘合相和剩余液体之间的反应而硬化之前，将大多数剩余反应液体除去，和在最终排液期间致密化。在它在液体中悬浮之前或与它在液体中悬浮联合，将适于向材料提供尺寸稳定长期性能的一种或多种膨胀补偿添加剂混入该粉末。本发明也涉及该方法的产品。 | ||||||
| 124 | 散热材料及其制造方法 | CN00805532.7 | 2000-12-22 | CN1345467A | 2002-04-17 | 石川修平; 三井任; 铃木健; 中山信亮; 竹内广幸; 安井诚二 |
| 一种制备散热材料的方法,包括:把石墨放进容器(70)内,将该容器置于炉中(工序S301),焙烧炉(60)内部,制备石墨多孔烧结体(12)(工序S302),其后,从炉(60)取出装有多孔烧结体(12)的容器(70),将装有多孔烧结体(12)的容器(70)放在压机(62)的凹区内(工序S303),然后,向容器(70)内浇注金属(14)的熔体(86)(工序S304),使冲头(84)冲入凹区内,将容器(70)内的上述熔体(86)挤下,进行压入配合(工序S305),借助冲头(84)的挤压,金属(14)的熔体(86)就浸入多孔烧结体(12)的开孔气孔中。 | ||||||
| 125 | 电子线路基片 | CN00128792.3 | 1995-04-11 | CN1332265A | 2002-01-23 | 宁晓山; 永田长寿; 樱庭正美; 田中敏和; 木村正美 |
| 将陶瓷件2通过入口导管6A连续地供入坩埚7中,在它们于坩埚7中被熔融金属1完全湿润后,陶瓷件2进入到位于出口侧的模子6B中,陶瓷件由该处被连续挤出,并在每个陶瓷件2的表面上焊有金属部分。这种方法可以以低的费用制成各种形状的具有令人满意的性能的金属陶瓷焊接材料(MBC)或部件5,此外,从这种MBC材料5可以制造电子线路基片。 | ||||||
| 126 | 进行基体涂层的浆料及其用途 | CN94115882.9 | 1994-09-13 | CN1052027C | 2000-05-03 | B·E·克里斯默; U·泰斯; P·拉德斯塔特; R·胡恩纳特 |
| 本发明涉及用于基体涂层的浆料及其制备方法和其用途，该浆料包括存在于液体分散体中的粉末材料，所说粉末材料选自金属，金属化合物和/或金属合金和/或硼和/或碳。 | ||||||
| 127 | 金属膜电阻器制造方法及制成的金属膜电阻器 | CN94112778.8 | 1994-12-16 | CN1039558C | 1998-08-19 | 清川肇 |
| 一种制造金属膜电阻器的方法，此电阻器包括至少一个绝缘衬底、一层在绝缘衬底表面上形成的铜-镍合金电阻膜以及一对与电阻膜接触的端子，该方法包括在电镀液温度为20-40℃和pH值为6-8的条件下在含铜盐和镍盐的焦磷酸盐水溶液的电镀液中通过电镀淀积铜-镍合金的步骤。 | ||||||
| 128 | 钨—铜复合粉 | CN96114471.8 | 1996-11-15 | CN1160773A | 1997-10-01 | L·P·多夫曼; M·J·塞豪尔; D·L·豪克; M·帕利瓦; G·T·迈耶斯; F·J·文斯吉蒂斯 |
| 提供一种高性能的钨—铜复合粉末，它由包括钨相和铜相且钨相基本上包封着铜相的个体颗粒所组成。钨包覆铜复合粉末可以经压缩和烧结制成钨铜假合金物件，这种物件有着钨相和铜相的均匀分布且没有铜漏失，它也可用于电子工业中的陶瓷上敷金属。 | ||||||
| 129 | 用于氮化铝衬底的厚膜导体浆料组合物 | CN96110998.X | 1996-08-16 | CN1146055A | 1997-03-26 | K·冈本 |
| 本发明涉及厚膜导体浆料组合物，可用厚膜技术将其加于氮化铝衬底上，可用丝网印刷或涂覆然后焙烧的方法在衬底上形成厚膜导体。将导体粉和硼化物分散于有机媒体中制成该组合物。 | ||||||
| 130 | 热循环和老化粘合力高的富银导体组合物 | CN92111403.6 | 1992-10-10 | CN1071535A | 1993-04-28 | H·原; M·H·拉布兰切; B·E·泰勒 |
| 本发明涉及一种热循环粘合添加剂组合物，其基本组成为铋、铜、铅、锌和过渡金属的氧化物微细颗粒的掺合物，并涉及由其制成的导电厚膜组合物。 | ||||||
| 131 | 铟锡氧化物薄膜的腐蚀方法 | CN89109515.2 | 1989-12-19 | CN1043827A | 1990-07-11 | 巴巴拉·A·罗西; 尤达雅纳思·米特拉 |
| 通过以下方法获得淀积在基片上的铟锡氧化物薄膜的精密图案，即，在由游离氩构成的气氛中对这些薄膜进行活性离子腐蚀。用上述方法可以容易地获得仅仅大约2～4微米或更小的线条宽度和间隔。 | ||||||
| 132 | GRAPHENE | PCT/AU2008001310 | 2008-09-03 | WO2009029984A1 | 2009-03-12 | STRIDE JOHN; CHOUCAIR MOHAMMAD |
| Graphene having a plurality of cavities therein is described. There is also described a process for producing graphene wherein a metal, for example an alkali metal, is reacted with an alcohol to produce a solvothermal product comprising a metal alkoxide. The solvothermal product is then pyrolysed to produce the graphene. | ||||||
| 133 | METHOD OF MANUFACTURING THICK-FILM, LOW MICROWAVE LOSS, SELF-BIASED BARIUM-HEXAFERRITE HAVING PERPENDICULAR MAGNETIC ANISOTROPY | PCT/US2007017786 | 2007-08-10 | WO2008091297A2 | 2008-07-31 | HARRIS VINCENT G; VITTORIA CARMINE; RACHFORD FREDERIC JOSEPH; CHEN YAJIE |
| A method of producing a relatively- thick film of a magnetic material on a substrate for use in microwave and millimeter wave devices is disclosed. The method includes preparing a wet paste comprising a binder material, glass frit, and a finely-grained magnetic material; applying the wet paste over a stencil, template or mask disposed on the substrate, to form a film on a surface of the substrate; drying the wet paste within an applied magnetic field, to vaporize fluid and organic compounds in the binder material and to produce a desired magnetic orientation in the magnetic film; and sintering the magnetic film. Hot pressing the magnetic film during sintering by adding weight on the film improves density. | ||||||
| 134 | IMPROVED METHOD OF BONDING ALUMINUM-BORON-CARBON COMPOSITES | PCT/US2007081628 | 2007-10-17 | WO2008048999A3 | 2008-06-05 | PYZIK ALEKSANDER; NEWMAN ROBERT |
| An aluminum-boron-carbon (ABC) ceramic-metal composite bonded to a metal or metal-ceramic composite other than ABC composite is made by forming a porous body comprised of particulates being comprised of a boron-carbon compound that has a particulate layer of titanium diboride powder on the surface of the porous body. The porous body is infiltrated with aluminum or alloy thereof resulting in the simultaneous infiltration of the TiB2 layer, where the layer has an aluminum metal content that is at least about 10 percentage points greater by volume than the (ABC) composite. The ABC composite is then fused to a metal or metal-ceramic body through the infiltrated layer of titanium diboride, wherein the metal-ceramic body is a composite other than an aluminum-boron-carbon composite. | ||||||
| 135 | PREPARATION OF GRAPHITIC ARTICLES | PCT/US2006007134 | 2006-02-28 | WO2006093989A3 | 2007-10-04 | PHILLIPS JONATHAN; NEMER MARTIN; WEIGLE JOHN C |
| Graphitic structures have been prepared by exposing templates (metal, metal-coated ceramic, graphite, for example) to a gaseous mixture that includes hydrocarbons and oxygen. When the template is metal, subsequent acid treatment removes the metal to yield monoliths, hollow graphitic structures, and other products. The shapes of the coated and hollow graphitic structures mimic the shapes of the templates. | ||||||
| 136 | PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING SAME | PCT/US2004039786 | 2004-11-29 | WO2005054148A9 | 2005-07-21 | ARNOLD JOE F; HALPERT DANIEL; SCOTT WALTER GUY |
| The present invention relates to a device and methods of making the same. The method comprises contacting a ceramic powder with a first polymer and surfactant to form a slip mixture, mixing the slip mixture, injecting the slip mixture into a mold to form a green body, removing the mold from the green body, sintering the green body to form a sintered ceramic body, and embedding the sintered ceramic body in a second polymer to form a composite. An apparatus for forming a net shaped green body includes a mold, supplemental mold and mold assembly. | ||||||
| 137 | SILICON NITRIDE BASED SUBSTRATE FOR SEMI-CONDUCTOR COMPONENTS | PCT/EP0113598 | 2001-11-22 | WO0246121A3 | 2002-09-06 | WOETTING GERHARD; WODITSCH PETER; HAESSLER CHRISTIAN; STOLLWERCK GUNTHER |
| The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SiC) and silicon oxynitride (Si2N2O) as crystalline phases. The silicon phase content is | ||||||
| 138 | CERAMIC COMPONENT AND USE THEREOF | PCT/DE0101738 | 2001-05-08 | WO0190025A3 | 2002-04-04 | FELTZ ADALBERT; PECINA AXEL |
| The invention relates to a ceramic component comprising a base body (1) consisting of a perovskite compound having the following general formula: M | ||||||
| 139 | PASSIVE ELECTRONIC COMPONENTS FROM NANO-PRECISION ENGINEERED MATERIALS | PCT/US9718752 | 1997-10-14 | WO9818741A2 | 1998-05-07 | YADAV TAPESH; YANG MARK L |
| Nanosize powders with particle size smaller than the critical length for specific material properties are used to form the ceramic layers of passive electronic components. Ceramic substrates are coated with electrodes, which are then coated with a ceramic layer from a suspension, preferably a low viscosity suspension, of nanoscale powders. The ceramic layer is dried at low temperatures (preferably below 200 DEG C) and it is sintered to high density (preferably above 90 %) at moderate temperatures (preferably low and less than 1,000 DEG C). Once sintered, an electrode layer is coated on top of the ceramic layer to yield an electrode/ceramic/electrode structure. | ||||||
| 140 | SELF STANDING NANOPARTICLE NETWORKS/SCAFFOLDS WITH CONTROLLABLE VOID DIMENSIONS | PCT/IN2009000723 | 2009-12-15 | WO2010070679A3 | 2010-10-14 | KUMARASWAMY GURUSWAMY; SHARMA KAMENDRA PRAKASH |
| The present invention discloses a self standing network or scaffold of nanoparticles with controllably variable mesh size between 500nm and 1 mm having particle volume fraction between 0.5 to 50%. The network comprises nanoparticles, a surfactant capable of forming ordered structured phases and a cross linking agent, wherein the surfactant is washed off leaving the self standing scaffold. The invention further discloses the process for preparing the self standing scaffolds and uses thereof. | ||||||
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