| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 161 | SELF STANDING NANOPARTICLE NETWORKS/SCAFFOLDS WITH CONTROLLABLE VOID DIMENSIONS | US14988945 | 2016-01-06 | US20160115079A1 | 2016-04-28 | Guruswamy Lynn KUMARASWAMY; Kamendra Prakash SHARMA |
| The present invention discloses a self standing network or scaffold of nanoparticles with controllably variable mesh size between 500 nm and 1 mm having particle volume fraction between 0.5 to 50%. The network comprises nanoparticles, a surfactant capable of forming ordered structured phases and a cross linking agent, wherein the surfactant is washed off leaving the self standing scaffold. The invention further discloses the process for preparing the self standing scaffolds and uses thereof. | ||||||
| 162 | Process for producing metallized substrate, and metallized substrate | US13258185 | 2010-03-29 | US09301390B2 | 2016-03-29 | Naoto Takahashi; Yuichiro Minabe |
| The present invention provides a process for producing a metalized substrate in which a predetermined metal paste composition is applied onto a sintered nitride ceramic substrate (10); the resultant is fired in a heat-resistant container at a predetermined condition; and the substrate (10) and a metal layer (30) are bonded together to each other through a titanium nitride layer (20). | ||||||
| 163 | Honeycomb structure and manufacturing method of the same | US14187752 | 2014-02-24 | US09273582B2 | 2016-03-01 | Yoshio Kikuchi; Takashi Suzuki |
| A honeycomb structure includes a tubular honeycomb structure body having porous partition walls to define and form a plurality of cells, and an outer peripheral wall; and a pair of electrode sections disposed on a side surface of the honeycomb structure body, an electrical resistivity of the honeycomb structure body is from 1 to 200 Ωcm, each of the pair of electrode sections is formed into a band shape extending in an extending direction of the cells, the electrode section contains silicon and an aggregate, and a ratio (the silicon/the aggregate) of a volume of the silicon to be contained in the electrode section to a volume of the aggregate to be contained in the electrode section is from 60/40 to 80/20. | ||||||
| 164 | METHOD FOR METALIZING VIAS | US14416916 | 2013-07-26 | US20150282318A1 | 2015-10-01 | Alfred Thimm; Klaus Herrmann |
| A method for producing plated-through holes in printed circuit boards and to printed circuit boards produced in this manner. | ||||||
| 165 | Graphitic substrates with ceramic dielectric layers | US14380981 | 2013-02-26 | US09107308B2 | 2015-08-11 | Nan Jiang; Zvi Yaniv |
| Different kinds of printing pastes or inks are utilized in various combinations to develop multiple ceramic dielectric layers on graphitic substrates in order to create effective dielectric ceramic layers that combine good adhesion to both graphitic substrates and printed copper traces, and strong insulating capability. The pastes or inks may comprise a high thermal conductivity powder. | ||||||
| 166 | ELECTRONICALLY CONDUCTING CARBON AND CARBON-BASED MATERIAL BY PYROLYSIS OF DEAD LEAVES AND OTHER SIMILAR NATURAL WASTE | US14377215 | 2013-02-08 | US20150004415A1 | 2015-01-01 | Mandakini Biswal; Abhik Banerjee; Satishchandra Balkrishna Ogale |
| The present invention disclosed herein is carbon nanomaterial and carbon based nanocomposites by pyrolysis of dead leaves and other similar natural waste material. In particular, the invention relates to synthesis of valuable functional carbon materials and their nanocomposites from different waste materials such as plant dead leaves and their use in high value added product applications. | ||||||
| 167 | Insulation sheet made from silicon nitride, and semiconductor module structure using the same | US13386735 | 2010-07-15 | US08916961B2 | 2014-12-23 | Takayuki Naba |
| An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride. | ||||||
| 168 | CERAMIC CONVERSION ELEMENT, OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING A CERAMIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A CERAMIC CONVERSION ELEMENT | US14350881 | 2012-09-10 | US20140306258A1 | 2014-10-16 | Ute Liepold; Carsten Schuh; Gia Khanh Pham; Mikael Ahlstedt |
| A ceramic conversion element having a multiplicity of columnar regions arranged within a ceramic or vitreous matrix, wherein the columnar regions have a preferential direction which makes an angle of at most 45° with a normal to the main surface of the conversion element, at least either the columnar regions or the matrix convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range different from the first wavelength range and, the columnar regions are formed by wavelength-converting monocrystalline or ceramic fibers and/or monocrystalline or ceramic platelets, said fibers and/or said platelets are provided with a reflective coating. | ||||||
| 169 | CIRCUIT BOARD AND ELECTRONIC APPARATUS PROVIDED WITH SAME | US14354600 | 2012-09-28 | US20140284088A1 | 2014-09-25 | Kiyotaka Nakamura; Yoshio Ohashi; Kunihide Shikata |
| A circuit board is provided with a metal wiring layer 12 on at least one principal surface of a ceramic sintered body 11, wherein the above-described metal wiring layer includes a first region 12a which is in contact with the principal surface and which contains a glass component and a second region 12b which is located on the first region 12a and which does not contain a glass component, the thickness of the first region 12a is 35% or more and 70% or less of the thickness of the metal wiring layer 12, and the average grain size in the first region 12a is smaller than the average grain size in the second region 12b. | ||||||
| 170 | HONEYCOMB STRUCTURE | US14227224 | 2014-03-27 | US20140212339A1 | 2014-07-31 | Atsushi KANEDA; Yoshimasa OMIYA; Yoshiyuki KASAI |
| A honeycomb structure includes a center part which has a cylindrical honeycomb structure part with a porous partition wall and an outer circumferential wall defining a plurality of cells, and which has a pair of electrodes disposed on the side surface of the honeycomb structure part. The honeycomb structure also includes an outer circumferential part disposed around the center part. The electric resistivity of the honeycomb structure part is 1-200 Ωcm. Each electrode in the electrode pair is formed in a band shape that extends in the direction that the cells extend. In a cross section, one electrode is located opposite the other electrode over the center of the honeycomb structure part. The outer circumferential part has a porous partition wall and an outer circumferential wall that define a plurality of cells. The volumetric heat capacity of the outer circumferential part is smaller than that of the center part. | ||||||
| 171 | Continuous or discrete metallization layer on a ceramic substrate | US12990595 | 2009-04-30 | US08609206B2 | 2013-12-17 | Maxim Seleznev |
| Surface metallization technology for ceramic substrates is disclosed herein. It makes use of a known phenomenon that many metal—metal oxide alloys in liquid state readily wet an oxide ceramic surface and strongly bond to it upon solidification. To achieve high adhesion strength of a metallization to ceramic, a discrete metallization layer consisting of metal droplets bonded to ceramic surface using metal—metal oxide bonding process is produced first. Next, a continuous metal layer is deposited on top of the discrete layer and bonded to it using a sintering process. As a result a strongly adhering, glass-free metallization layer directly bonded to ceramic surface is produced. In particular, the process can be successfully used to metalize aluminum nitride ceramic with high thermal and electrical conductivity copper metal. | ||||||
| 172 | COMPOSITE MEMBER INCLUDING SUBSTRATE MADE OF COMPOSITE MATERIAL | US14000247 | 2012-02-20 | US20130328184A1 | 2013-12-12 | Isao Iwayama; Taichiro Nishikawa; Toshiya Ikeda; Shigeki Koyama |
| A composite member has a substrate made of a composite material having SiC combined with magnesium or a magnesium alloy, and has a warpage degree of not less than 0.01×10−3 and not more than 10×10−3, the warpage degree being defined as lmax/Dmax, where lmax being a difference between a maximum value and a minimum value of surface displacement of one surface of composite member measured along a longest side thereof, and Dmax being a length of the longest side. Thereby, a composite member capable of efficiently dissipating heat to an installation object, a heat-dissipating member using the composite member, and a semiconductor device having the heat-dissipating member are provided. | ||||||
| 173 | Ceramic substrate material, method for the production and use thereof, and antenna or antenna array | US13008185 | 2011-01-18 | US08586178B2 | 2013-11-19 | Dieter Schwanke; Achim Bittner; Ulrich Schmid; Mirco Harnack |
| A method for producing a ceramic substrate material having a first layer and possibly a further layer is specified. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix and a second component made of a further crystalline ceramic material, which is provided in the matrix. An etching step is performed, mantle areas of the crystals and/or crystal agglomerates of the second component being etched selectively in the first layer to generate a cavity structure in the first layer. The present invention also relates to a corresponding ceramic substrate material, an antenna or an antenna array, and the use of the ceramic substrate material for an antenna or an antenna array. | ||||||
| 174 | Polishing composition and method using same | US13297099 | 2011-11-15 | US08585920B2 | 2013-11-19 | John L. Lombardi |
| A polishing composition, comprising a compound having structure I or salts thereof: wherein R1 is selected from the group consisting of —O−Mx+ wherein x is selected from the group consisting of 1, 2, and 3, —O—R3 wherein R3 is selected from the group consisting of alkyl, allyl, and phenyl, —N(R3R4) wherein R4 is selected from the group consisting of —H, alkyl, allyl, and phenyl, and —S—R3, and wherein R2 is selected from the group consisting of —CH2—CO2—CH3, —CO—NH—R5, —CH2—CH(OH)—CH2—OH, —CH2—CH(OH)—CH2—R3, and —CH2-substituted phenyl, wherein R5 is selected from the group consisting of alkyl and substituted phenyl. | ||||||
| 175 | Ceramic substrate material, method for the production and use thereof, and antenna or antenna array | US12562396 | 2009-09-18 | US08529780B2 | 2013-09-10 | Dieter Schwanke; Mirco Harnack; Achim Bittner; Ulrich Schmid |
| The invention relates to a ceramic substrate material having a first layer having a cavity structure formed therein, and at least one sealing layer situated on at least a part of the cavity structure. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix, the first layer containing a second component made of a further crystalline ceramic material, with selected mantle areas of the crystals and/or crystal agglomerates of the second component being etched out in such a way that the cavity structure is provided (preferably in the form of a pore and/or tube structure). The sealing layer seals the surface of the first layer in the areas on which it is situated (e.g., above the cavity structure), allowing application of thin-film structures to the cavity structure. | ||||||
| 176 | DEVICE HOUSING AND METHOD FOR MANUFACTURING SAME | US13451070 | 2012-04-19 | US20130171392A1 | 2013-07-04 | REN-BO WANG; XIN-WU GUAN |
| A device housing for electronic device includes a substrate comprising activated carbon particles and adhesive material for bonding and rigidifying the activated carbon particles; and a decorative coating directly formed on a surface of the substrate. A method for manufacturing the device housing is also described. | ||||||
| 177 | POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME | US13806337 | 2011-09-26 | US20130168692A1 | 2013-07-04 | Hiroshi Komorita; Noritaka Nakayama; Kentaro Takanami |
| There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m·K, the substrate having a surface free from recesses having a maximum diameter of more than 200 μm. | ||||||
| 178 | POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME | US13806320 | 2011-08-03 | US20130157445A1 | 2013-06-20 | Kimiya Miyashita; Michiyasu Komatsu; Katsuyuki Aoki; Kai Funaki |
| There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10−6/K to 6.1×10−6/K between 20° C. and 600° C. and 5.5×10−6/K to 6.6×10−6/K between 20° C. and 1100° C. | ||||||
| 179 | Thermal nanocomposites | US10435222 | 2003-05-09 | US08389603B2 | 2013-03-05 | Tapesh Yadav; Clayton Kostelecky; Evan Franke; Bijan Miremadi; Ming Au; Anthony Vigliotti |
| Methods for preparing nanocomposites with thermal properties modified by powder size below 100 nanometers. Both low-loaded and highly-loaded nanocomposites are included. Nanoscale coated, un-coated, whisker type fillers are taught. Thermal nanocomposite layers may be prepared on substrates. | ||||||
| 180 | Graphite material | US13242968 | 2011-09-23 | US08367196B2 | 2013-02-05 | Toshiyuki Nishiwaki; Masahiro Yasuda; Toshiki Ito |
| A graphite material includes a plurality of graphite particles and a plurality of pores. The plurality of graphite particles and the plurality of pores form a microstructure. A ratio of an elastic modulus to a compression strength of the graphite material ranges from 109 to 138. Preferably, a ratio of a total area of the pores to a whole area of the graphite material in a cross-section of the graphite material ranges from 17.94% to 19.97%. | ||||||
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