| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Organic magnetic film and method of manufacturing the same | EP93103954.9 | 1993-03-11 | EP0561279B1 | 1999-12-29 | Ohtake, Tadashi; Mino, Norihisa; Ogawa, Kazufumi |
| 102 | Organic magnetic film and method of manufacturing the same | EP93103954.9 | 1993-03-11 | EP0561279A1 | 1993-09-22 | Ohtake, Tadashi; Mino, Norihisa; Ogawa, Kazufumi |
According to the invention, the surface of a substrate possessing an active hydrogen group is contacted with a chemical adsorbent containing a radical generation precursor group or metal ion capturing group within a molecule - also possessing a reactive functional group such as halosilyl or alkoxy silyl at its end - to form a chemical adsorption film by removing the unreacted chemical adsorbent. Radicals are then generated or magnetism is expressed on the chemical adsorption film. For example, when the diazo group on the film surface is irradiated with ultraviolet rays and transformed into carbene, an organic magnetic chemical adsorption monomolecular film is obtained. It may also be possible to form such a film by contacting the chemically absorbed film with a chemical adsorbent possessing the reactive functional group at its end, so that organic molecules possessing unpaired electrons derived from a metal or radical are oriented, forming a magnetic organic film. |
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| 103 | CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE | PCT/US2009045735 | 2009-05-29 | WO2009158117A3 | 2010-03-25 | HADDON ROBERT C; ITKIS MIKHAIL E; RAMESH PALANISAMY; BEKYAROVA ELENA; KHIZROEV SAKHRAT; HONG JEONGMIN |
| Compounds, compositions, systems and methods for the chemical and electrochemical modification of the electronic structure of graphene and especially epitaxial graphene (EG) are presented. Beneficially, such systems and methods allow the large-scale fabrication of electronic EG devices. Vigorous oxidative conditions may allow substantially complete removal of the EG carbon atoms and the generation of insulating regions; such processing is equivalent to that which is currently used in the semiconductor industry to lithographically etch or oxidize silicon and thereby define the physical features and electronic structure of the devices. However graphene offers an excellent opportunity for controlled modification of the hybridization of the carbon atoms from sp2 to sp3 states by chemical addition of organic functional groups. We show that such chemistries offer opportunities far beyond those currently employed in the semiconductor industry for control of the local electronic structure of the graphene sheet and do not require the physical removal of areas of graphene or its oxidation, in order to generate the full complement of electronic devices necessary to produce functional electronic circuitry. Selective saturation of the p-bonds opens a band gap in the graphene electronic structure which results in a semiconducting or insulating form of graphene, while allowing the insertion of new functionality with the possibility of 3-D electronic architectures. Beneficially, these techniques allow for large- scale fabrication of electronic EG devices and integrated circuits, as they allow the generation of wires (interconnects), semiconductors (transistors), dielectrics, and insulators. | ||||||
| 104 | A SPINTRONIC DEVICE HAVING A CARBON NANOTUBE ARRAY-BASED SPACER LAYER AND METHOD OF FORMING SAME | PCT/US2005009454 | 2005-03-22 | WO2006022859A2 | 2006-03-02 | EPSTEIN ARTHUR J; ETZKORN STEPHEN J |
| This invention relates to spintronic devices -- and electronic devices comprising them, such as spin valves, spin tunnel junctions and spin transistors -- which utilize a layer comprised of an array of aligned carbon nanontubes. A spintronic device includes, a bottom electrode, a first ferromagnetic layer, a CNT array, a second ferromagnetic layer and a top electrode. | ||||||
| 105 | MAGNETIC NANOHOLE SUPERLATTICES | PCT/US2009037009 | 2009-03-12 | WO2009148679A3 | 2010-02-25 | LIU FENG |
| A magnetic material is disclosed including a two-dimensional array of carbon atoms and a two-dimensional array of nanoholes patterned in the two-dimensional array of carbon atoms. The magnetic material has long-range magnetic ordering at a temperature below a critical temperature Tc. | ||||||
| 106 | NANODEVICES FOR SPINTRONICS METHODS OF USING SAME | PCT/US2008002761 | 2008-02-29 | WO2008130465A3 | 2008-12-24 | ZALIZNYAK IGOR; TSVELIK ALEXEI; KHARZEEV DMITRI |
| Graphene magnet multilayers (GMMs) are employed to facilitate development of spintronic devices. The GMMs can include a sheet of monolayer (ML) or few-layer (FL) graphene in contact with a magnetic material, such as a ferromagnetic (FM) or an antiferromagnetic material. Electrode terminals can be disposed on the GMMs to be in electrical contact with the graphene. A magnetic field effect is induced in the graphene sheet based on an exchange magnetic field resulting from a magnetization of the magnetic material which is in contact with graphene. Electrical characteristics of the graphene can be manipulated based on the magnetization of the magnetic material in the GMM. | ||||||
| 107 | SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING STRUCTURES USING FERROMAGNETIC ELECTRODES | PCT/US2004016156 | 2004-05-24 | WO2004107405A3 | 2005-03-03 | SHI JING; VARDENY VALY |
| The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed. | ||||||
| 108 | OMR SENSOR AND ARRANGEMENT OF SAID SENSORS | PCT/EP2007055801 | 2007-06-13 | WO2007147760A3 | 2008-02-21 | RUEHRIG MANFRED |
| Magnetic sensors formed from layer systems with at least one polymer layer are known. In such layer systems the electrical resistance changes depending on the magnetic field. Non-linear characteristic curves are generally provided which can have a bell-shaped curve. According to the invention, an additional magnetic layer system is arranged on or below the at least one polymer layer which influences a magnetic bias to the characteristic curve of the polymer magnetic sensor as a result of the stray field thereof. A bridge circuit for application to a practical measurement can be formed from an arrangement of a number of such magnetic sensors. | ||||||
| 109 | OMR(ORGANIC-MAGNETORESISTIVE) SENSOR AND METHOD FOR THE PRODUCTION THEREOF | PCT/EP2007053626 | 2007-04-13 | WO2007125021A2 | 2007-11-08 | PAETZOLD RALPH; RIEGER GOTTHARD; RUEHRIG MANFRED; SARFERT WIEBKE; SCHMID GUENTER; WECKER JOACHIM; WEISS ROLAND |
| The invention relates to an OMR sensor and to a method for producing an organic magnetoresistive sensor. Said sensor can be produced by printing techniques. The method for the production thereof consists of at least applying an unstructured layer according to a process step suitable for mass production. | ||||||
| 110 | REGULARLY ARRAYED NANOSTRUCTURED MATERIAL | PCT/JP2005020659 | 2005-11-04 | WO2006049320A3 | 2007-06-14 | WAKI KOUKICHI |
| A nanostructured material regularly arrayed over a large area comprising regularly arrayed domain structures formed on a substrate and having therein regularly arrayed pores with a size of 2 to 200 nm and nanoparticles incorporated into the pores. | ||||||
| 111 | PROCESS FOR OBTAINING SPATIALLY-ORGANISED NANOSTRUCTURES ON THIN FILMS | PCT/EP0313594 | 2003-12-02 | WO2004051709A8 | 2005-09-15 | BISCARINI FABIO; CAVALLINI MASSIMILIANO; LEIGH DAVID A; ZERBETTO FRANCESCO |
| A process for forming nanostructures comprising the step of applying on localised regions of a smooth thin film of bistable or multistable molecules an external perturbation with preset magnitude thereby said film undergoes a collective morphological transformation and nanostructures are formed by selforganisation of said molecules, said nanostructures having preset number, size, interspacing and shape. The nanostructures can be used as storage medium in storage devices. | ||||||
| 112 | PROCESS FOR OBTAINING SPATIALLY-ORGANISED NANOSTRUCTURES ON THIN FILMS | PCT/EP0313594 | 2003-12-02 | WO2004051709A3 | 2004-08-05 | BISCARINI FABIO; CAVALLINI MASSIMILIANO; LEIGH DAVID A; ZERBETTO FRANCESCO |
| A process for forming nanostructures comprising the step of applying on localised regions of a smooth thin film of bistable or multistable molecules an external perturbation with present magnitude thereby said film undergoes a collective morphological transformation and nanostructures are formed by selforganisation of said molecules, said nanostructures having present number, size, interspacing and shape. The nanostructures can be used as storage medium in storage devices. | ||||||
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