| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 61 | Organic-inorganic composite magnetic material and its manufacture | JP17339599 | 1999-06-18 | JP2001006930A | 2001-01-12 | SUGAWARA TADASHI; IZUMIOKA AKIRA; SAKURAI HIROUMI |
| PROBLEM TO BE SOLVED: To provide organic-inorganic composite magnetic material having superparamagnetism or ferromagnetism in which organic radical molecules are chemically adsorbed on a metal surface and formed. SOLUTION: In this magnetic material, organic radical molecules bearing localized spin caused by unpaired electrons are chemically adsorbed on a metal surface and formed. The localized spin of the organic radical adsorbed on the metal surface shows superparamagnetism or ferromagnetism which are formed by magnetic interaction with conduction electrons of metal. The metal is gold fine particles which are composed of organic radical chemical adsorption type gold fine particles formed by chemical adsorption of thiol coordination type organic radical molecules on a metal particle surface. | ||||||
| 62 | Molecular magnetic thin film | JP6759299 | 1999-03-12 | JP2000269030A | 2000-09-29 | OGOSHI SHINICHI; HASHIMOTO KAZUHITO; FUJISHIMA AKIRA |
| PROBLEM TO BE SOLVED: To provide a transparent molecular magnetic thin film, having a high Tc and exhibiting the characteristics at room temperature. SOLUTION: This transparent molecular magnetic thin film consists essentially of a vanadium chromium hexacyano complex. The vanadium chromium hexacyano complex basically consists of vanadium(V) and chromium hexacyano(Cr(CN6). Among others in terms of structure, it contains VII-NC-CrIII and VIII- NC-CrIII as main components and represented by a formula (VIIxVIII1-x)y[CrIII (CN)6].2H2O, where 0<x≤1 and 1<y. COPYRIGHT: (C)2000,JPO | ||||||
| 63 | Organic magnetic film and manufacture thereof | JP5436293 | 1993-03-15 | JPH0645142A | 1994-02-18 | OTAKE TADASHI; MINO NORIHISA; OGAWA KAZUFUMI |
| PURPOSE:To obtain an organic magnetic film having macroscopic magnetic properties by a method wherein molecules, which respectively have a functional group having a free radical or a metal and at least one specified functional group, have active hydrogen or an alkaline metal or are brought into contact to a given substrate and are caused a chemical adsorption reaction to form an organic film. CONSTITUTION:An organic film is formed by a method wherein molecules constituting the film are respectively fixed directly or indirectly on a substrate by a covalent bond via at least one atom, which is chosen from among Si, Ge, Sn, Ti, Zr, S and C. The organic film has unpaired electrons, which are derived from a metal and/or a free radical, in the film and is an organic magnetic film having magnetic properties. This organic film is constituted of a monomolecular film or is constituted of an accumulated film formed by a method wherein molecules constituting the organic film are respectively fixed by a covalent bond with an organic internal layer film via at least one atom, which is chosen from among Si, Ge, Sn, Ti, Zr, S and C. Thereby, the organic magnetic film having the macroscopic magnetic properties can be obtained. | ||||||
| 64 | GRAPHENE BASED MAGNETORESISTANCE SENSORS | US15107628 | 2014-12-26 | US20160320458A1 | 2016-11-03 | GOPINADHAN KALON; HYUNSOO YANG; YOUNG JUN SHIN; ANTONIO HELIO CASTRO NETO |
| A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided. | ||||||
| 65 | Spin injector device comprising a protection layer at the centre thereof | US14394472 | 2013-04-15 | US09362488B2 | 2016-06-07 | Martin Bowen; Mébarek Alouani; Samy Boukari; Eric Beaurepaire; Wolfgang Weber; Fabrice Scheurer; Loïc Joly |
| A method for manufacturing a spin injector device, comprising the following steps of: a) forming a metal protection layer on a face of a substrate, so as to restrict or prevent oxidation and/or contamination of said face by its environment, the face being magnetic and electrically conductive, the protection layer being of a diamagnetic or paramagnetic nature; b) forming an upper layer onto the protection layer, able to promote a spin bias of electronics sates in the vicinity of the Fermi level of the interface between the protection layer and the upper layer according to an amplitude and a spin referential frame which are defined by the magnetism of the substrate and/or of the face of the substrate, the upper layer being an organic layer of which one or more molecular sites have, in contact with the protection layer, a paramagnetic moment. | ||||||
| 66 | Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes | US13851537 | 2013-03-27 | US09219226B2 | 2015-12-22 | Jing Shi; Valy Vardeny |
| The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed. | ||||||
| 67 | SPIN-POLARISED CURRENT SOURCE | US14395035 | 2013-04-15 | US20150129994A1 | 2015-05-14 | Martin Bowen; Wolfgang Weber; Loïc Joly; Eric Beaurepaire; Fabrice Scheurer; Samy Boukari; Mébarek Alouani |
| Method of filtering electrons to obtain spin-polarisation of a current conducting at least 75% of electrons at the Fermi level, used with a spin-polarised current source comprising: a polarised spin injection device comprising an electrically conducting substrate of which a first face has magnetic properties and an organic layer in contact with the first face of the substrate; an electrically conducting material called the ground, the organic layer being arranged between the ground and the substrate; a current source electrically connected to the first face of the substrate and the ground; the method comprising circulation of the electron conduction current by means of the current source, between the first face of the substrate and the ground, at a temperature higher than −220° C. | ||||||
| 68 | SPIN INJECTOR DEVICE COMPRISING A PROTECTION LAYER AT THE CENTRE THEREOF | US14394472 | 2013-04-15 | US20150072442A1 | 2015-03-12 | Martin Bowen; Mébarek Alouani; Samy Boukari; Eric Beaurepaire; Wolfgang Weber; Fabrice Scheurer; Loïc Joly |
| A method for manufacturing a spin injector device, comprising the following steps of: a) forming a metal protection layer on a face of a substrate, so as to restrict or prevent oxidation and/or contamination of said face by its environment, the face being magnetic and electrically conductive, the protection layer being of a diamagnetic or paramagnetic nature; b) forming an upper layer onto the protection layer, able to promote a spin bias of electronics sates in the vicinity of the Fermi level of the interface between the protection layer and the upper layer according to an amplitude and a spin referential frame which are defined by the magnetism of the substrate and/or of the face of the substrate, the upper layer being an organic layer of which one or more molecular sites have, in contact with the protection layer, a paramagnetic moment. | ||||||
| 69 | Ferromagnetic graphenes and spin valve devices including the same | US13483879 | 2012-05-30 | US08895161B2 | 2014-11-25 | Sung-Hoon Lee |
| A ferromagnetic graphene includes at least one antidot such that the ferromagnetic graphene has ferromagnetic characteristics. A spin valve device includes a ferromagnetic graphene. The ferromagnetic graphene includes a first region, a second region, and a third region. At least one antidot is formed in each of the first region and the third region. The first region and the third region are ferromagnetic regions, whereas the second region is a non-ferromagnetic region. | ||||||
| 70 | HIGH DENSITY MOLECULAR MEMORY STORAGE WITH READ AND WRITE CAPABILITIES | US13423520 | 2012-03-19 | US20130100724A1 | 2013-04-25 | Karthik Venkataraman; Jagadeesh S. Moodera |
| A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical π-dimer layer structure. | ||||||
| 71 | Nanodevices for Spintronics and Methods of Using Same | US12530862 | 2008-02-29 | US20100109712A1 | 2010-05-06 | Igor Zaliznyak; Alexei Tsvelik; Dmitri Kharzeev |
| Graphene magnet multilayers (GMMs) are employed to facilitate development of spintronic devices. The GMMs can include a sheet of monolayer (ML) or few-layer (FL) graphene in contact with a magnetic material, such as a ferromagnetic (FM) or an antiferromagnetic material. Electrode terminals can be disposed on the GMMs to be in electrical contact with the graphene. A magnetic field effect is induced in the graphene sheet based on an exchange magnetic field resulting from a magnetization of the magnetic material which is in contact with graphene. Electrical characteristics of the graphene can be manipulated based on the magnetization of the magnetic material in the GMM. | ||||||
| 72 | METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSOR WITH A CONFINED-CURRENT-PATH (CCP) | US12131863 | 2008-06-02 | US20090297700A1 | 2009-12-03 | Thomas R. Berthold; Matthew J. Carey; Jeffrey R. Childress; Jordan Asher Katine; Stefan Maat |
| A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer. | ||||||
| 73 | Process for obtaining spatially-organised nanostructures on thin films | US10537158 | 2003-12-02 | US07534468B2 | 2009-05-19 | Fabio Biscarini; Massimiliano Cavallini; David A. Leigh; Francesco Zerbetto |
| A process for forming nanostructures comprising the step of applying on localised regions of a smooth thin film of bistable or multistable molecules an external perturbation with preset magnitude thereby said film undergoes a collective morphological transformation and nanostructures are formed by selforganisation of said molecules, said nanostructures having preset number, size, interspacing and shape. The nanostructures can be used as storage medium in storage devices. | ||||||
| 74 | Core Composite Film for a Magnetic/Nonmagnetic/Magnetic Multilayer Thin Film and Its Useage | US11909553 | 2006-03-24 | US20090011284A1 | 2009-01-08 | Tianxing Wang; Zhongming Zeng; Guanxiang Du; Xiufeng Han; Zhenmin Hong; Gauquan Shi |
| The present invention relates to a core composite film for magnetic/nonmagnetic/magnetic multilayer thin film comprising a free magnetic layer, a spacer layer and a pinned magnetic layer. As the core composite film, it may be only the spacer layer is an LB film; and the spacer layer is an organic LB film consisting of materials with insulative, conductive or semiconductive character. As the core composite film, it may also be said free magnetic layer, spacer layer and pinned magnetic layer are all LB films; wherein the pinned magnetic layer and the free magnetic layer are organic films made of magnetic materials. The core composite film can be applied to a magnetic spin valve sensor, which can compose a magnetic induction unit of a magnetic spin valve sensor; and it can also be applied to a magnetic random access memory as a memory cell. Uniformity and consistency can be kept over large areas for the core composite film, and the process thereof is simple and the cost is low; moreover, by use of an LB organic film substituting for conventional spacer layer and magnetic layer, devices are made lighter, thinner, easier to be processed to and integrated. | ||||||
| 75 | Regularly Arrayed Nanostructured Material | US11718508 | 2005-11-04 | US20080206546A1 | 2008-08-28 | Koukichi Waki |
| A nanostructured material regularly arrayed over a large area comprising regularly arrayed domain structures formed on a substrate and having therein regularly arrayed pores with a size of 2 to 200 nm and nanoparticles incorporated into the pores. | ||||||
| 76 | Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes | US10557665 | 2004-05-24 | US20070082230A1 | 2007-04-12 | Jing Shi; Valy Vardeny |
| The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed. | ||||||
| 77 | Carbon containing sputter target alloy compositions | US10995112 | 2004-11-24 | US20060110626A1 | 2006-05-25 | Abdelouahab Ziani; Michael Lathrop; Francois Dary |
| The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M1—M2—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy. | ||||||
| 78 | Process for obtaining spatially-organised nanostructures on thin films | US10537158 | 2003-12-02 | US20060019439A1 | 2006-01-26 | Fabio Biscarini; Massimiliano Cavallini; David Leigh; Francesco Zerbetto |
| A process for forming nanostructures comprising the step of applying on localised regions of a smooth thin film of bistable or multistable molecules an external perturbation with preset magnitude thereby said film undergoes a collective morphological transformation and nanostructures are formed by selforganisation of said molecules, said nanostructures having preset number, size, interspacing and shape. The nanostructures can be used as storage medium in storage devices. | ||||||
| 79 | Magnetic recording medium, and method for producing the same | US11094211 | 2005-03-31 | US20050217760A1 | 2005-10-06 | Yasushi Hattori; Koukichi Waki; Kenji Ichikawa |
| A magnetic recording medium including: a support; and a magnetic layer provided on the support, the magnetic layer containing a magnetic particle of a CuAu type or Cu3Au type ferromagnetic ordered alloy phase, wherein a content of boron in the magnetic particle is 0 to 0.9 at %, and a content of fluorine in the magnetic particle is 0.09 to 0.3 at %. Also provided is a method for producing a magnetic recording medium including: forming an alloy particle capable of forming a CuAu type or Cu3Au type ferromagnetic ordered alloy phase by a reduction method in which a reducing agent containing a boron atom is used; forming a layer including the alloy particle on a support; heat-treating the alloy particle at a temperature below a transformation temperature of the alloy particle; and annealing the alloy particle at a temperature which is not lower than the transformation temperature of the alloy particle. | ||||||
| 80 | Organic-inorganic compositie magnetic material and method for manufacturing same | US11126220 | 2005-05-11 | US20050205851A1 | 2005-09-22 | Tadashi Sugawara; Akira Izuoka; Hiromi Sakurai |
| The present invention provided a method for manufacturing an organic-inorganic composite magnetic material which has organic radical molecules chemisorbed on the surface of a metal substance and exhibits super-paramagnetism or ferromagnetism. An ionic salt of a metal allowing thiol to be absorbed thereon is reduced with a reducing agent in the presence of a stabilizing ligand so as to form a soluble metal particle. The stabilizing ligand absorbed on the formed soluble metal particle is exchanged with a thiol-substituted organic radical having an unpaired electron so as to synthesize an organic-radical absorbed metal particle. | ||||||
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