| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | SOURCE DE COURANT POLARISEE EN SPINS | EP13715707.9 | 2013-04-15 | EP2839489A1 | 2015-02-25 | BOWEN, Martin; WEBER, Wolfgang; JOLY, Loïc; BEAUREPAIRE, Eric; SCHEURER, Fabrice; BOUKARI, Samy; ALOUANI, Mébarek |
| The invention relates to a method for filtering electrons, enabling a spin polarization of an electron current to be obtained at an at least 75% Fermi level, implemented by a spin-polarised current source (2) comprising: a polarized-spin injector device comprising an electroconductive substrate (10) having a first surface (11) that has magnetic properties and an organic layer (20) in contact with the first surface of the substrate; an electroconductive material, called mass (30), the organic layer being arranged between the earth and the substrate; and a current source (40) that is electrically connected to the first surface of the substrate and to the earth. The invention involves generating the circulation of the electron-conducting current by means of the current source, between the first surface of the substrate and the earth, at a temperature higher than -220°C. | ||||||
| 42 | REGULARLY ARRAYED NANOSTRUCTURED MATERIAL | EP05805944.5 | 2005-11-04 | EP1817779B1 | 2010-02-10 | WAKI, Koukichi, c/o Fuji Photo Film Co., Ltd. |
| A nanostructured material regularly arrayed over a large area comprising regularly arrayed domain structures formed on a substrate and having therein regularly arrayed pores with a size of 2 to 200 nm and nanoparticles incorporated into the pores. | ||||||
| 43 | Carbon containing sputter target alloy compositions | EP05255241.1 | 2005-08-25 | EP1662018A3 | 2006-11-08 | Ziani, Abdelouahab; Lathrop, Michael; Dary, Francois C |
The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr-C, Cr-M-C or Cr-M1-M2-C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.
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| 44 | Carbon containing sputter target alloy compositions | EP05255241.1 | 2005-08-25 | EP1662018A2 | 2006-05-31 | Ziani, Abdelouahab; Lathrop, Michael; Dary, Francois C |
The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr-C, Cr-M-C or Cr-M1-M2-C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy. |
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| 45 | ORGANIC-INORGANIC COMPOSITE MAGNETIC MATERIAL AND METHOD FOR PREPARING THE SAME | EP00939097.2 | 2000-06-16 | EP1211698A1 | 2002-06-05 | SUGAWARA, Tadashi; IZUOKA, Akira; SAKURAI, Hiromi |
The present invention provided a method for manufacturing an organic-inorganic composite magnetic material which has organic radical molecules chemisorbed on the surface of a metal substance and exhibits super-paramagnetism or ferromagnetism. An ionic salt of a metal allowing thiol to be absorbed thereon is reduced with a reducing agent in the presence of a stabilizing ligand so as to form a soluble metal particle. The stabilizing ligand absorbed on the formed soluble metal particle is exchanged with a thiol-substituted organic radical having an unpaired electron so as to synthesize an organic-radical absorbed metal particle. |
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| 46 | スピン偏極電流源 | JP2015506200 | 2013-04-15 | JP6225168B2 | 2017-11-01 | ボーエン, マルティン; ウェーバー, ヴォルフガング; ジョリ, ロイック; ボルペール, エリック; シュラー, ファブリス; ブカリ, サミー; アルアニ, メバレク |
| 47 | グラフェン系磁気抵抗センサー | JP2016542954 | 2014-12-26 | JP2017509139A | 2017-03-30 | ゴピナダーン カロン，; ヒョンス ヤン，; ヨン ジュン シン，; ネト， アントニオ エリオ カストロ |
| グラフェン構造が提供されている。このグラフェン構造は、基板層と、基板層に配置される少なくとも2つのグラフェン層とを有している。少なくとも2つのグラフェン層は、ゲート電圧チューニング層と有効グラフェン層とを有している。有効グラフェン層は1つ以上のグラフェン層を有している。グラフェン構造の磁気抵抗比は、ゲート電圧チューニング層と有効グラフェン層との間の電荷移動度および/またはキャリア密度の差によって決まる。ゲート電圧チューニング層の電荷移動度および/またはキャリア密度は、グラフェン構造に印加されるゲート電圧によるチューニングが可能である。さらに、このグラフェン構造を有する磁界センサーも提供されている。【選択図】図1 | ||||||
| 48 | Core composite membrane and its applications for use in a magnetic / non-magnetic / magnetic multilayer film | JP2008502228 | 2006-03-24 | JP4880669B2 | 2012-02-22 | 中明 曽; 関祥 杜; ▲貞▼敏 洪; 天興 王; 高全 石; 秀峰 韓 |
| 49 | Nano-structural material with an ordered array | JP2004321602 | 2004-11-05 | JP4707995B2 | 2011-06-22 | 幸吉 脇 |
| 50 | Process for producing a carbon layer covering the transition metal nanostructure, a method of manufacturing a carbon layer covering the transition metal nanostructure pattern, the carbon layer covering the transition metal nanostructures, and the carbon layer covering the transition metal nanostructure pattern | JP2004026839 | 2004-02-03 | JP4032121B2 | 2008-01-16 | 健太郎 小杉; 信之 西 |
| An anhydrous chloride with a formula of MCl2 (M=Fe, Co or Ni) is dissolved into an anhydrous acetonitrile solvent to form a chloride-acetonitrile solution. Then, calcium carbide minute powders are added and dispersed in the chloride-acetonitrile solution to form a reactive solution. Then, the reactive solution is thermally treated (first thermal treatment) to form a nano-powder made of a transition metal acetylide compound having an M-C2-M bond, a tetragonal structure, and a formula of MC2 (herein, M=Fe, Co or Ni). Then, the nano-powder is thermally treated (second thermal treatment) again at a temperature higher than the temperature in the first thermal treatment to form a carbon layer-covering transition metallic nano-structure wherein a metallic core made of the transition metal M is covered with a carbon layer. |
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| 51 | Carbon layer coated transition metal nano structure, pattern thereof, and manufacturing methods for both | JP2004026839 | 2004-02-03 | JP2005223001A | 2005-08-18 | NISHI NOBUYUKI; KOSUGI KENTARO |
| <P>PROBLEM TO BE SOLVED: To provide a practical carbon layer coated transition metal nano structure. <P>SOLUTION: Anhydrous chloride expressed by a general expression MCl<SB>2</SB>(M=Fe, Co, or Ni) and calcium carbide fine powder are heated (first heat treatment) in an acetonitrile solvent, thus manufacturing nano powder that has M-C<SB>2</SB>-M bonding, shows a tetragonal structural skeleton, and is made of a transition metal acetylide compound (M=Fe, Co, or Ni) expressed by a general expression comprising MC<SB>2</SB>. Then, the nano powder is heated to at least heating temperature in the first heat treatment for performing second heat treatment, thus forming the carbon layer coated transition metal nano structure having a metal core made of the transition metal of Fe, Co, or Ni and a carbon layer formed while the periphery of the metal core is coated. <P>COPYRIGHT: (C)2005,JPO&NCIPI | ||||||
| 52 | Organic magnetic film | JP2001334925 | 2001-10-31 | JP2003142315A | 2003-05-16 | SUGAWARA TADASHI; MATSUSHITA MICHIO |
| PROBLEM TO BE SOLVED: To provide an organic magnetic film that becomes a magnetic recording medium, capable of realizing a magnetic recording system which does not use changes in the direction of magnetization, a very small recording unit, and the multi-valued recording. SOLUTION: Magnetic recording is performed by not utilizing direction of magnetization, utilizing the presence/absence of magnetism. The presence/ absence of magnetism is realized by generating ion radicals by electrochemically oxidizing π-conjugated organic molecules and converting the radical into closed shell radicals through reduction. The π-conjugated organic molecules are arranged on the surface of a substrate by introducing a long-chain alkyl group. The multi-valued recording is performed, by dividing an oxidation-reduction reaction into multiple stages by connecting a plurality of π-conjugated sections, having oxidizing and reducing ability to each other by means of a ferromagnetic coupler. This organic magnetic film is composed of the π-conjugated organic molecules, coupled with at least one alkyl group and formed on a highly oriented substrate in a self-assembling state, so that the π-conjugated organic molecules may be electrochemically oxidized, independently from other π-conjugated organic molecules. COPYRIGHT: (C)2003,JPO | ||||||
| 53 | Organic magnetic film and a method of manufacturing the same | JP5436293 | 1993-03-15 | JP3388797B2 | 2003-03-24 | 忠 大竹; 小川 一文; 規央 美濃 |
| 54 | Formation of phthalocyanine thin film | JP23651597 | 1997-08-18 | JPH1167571A | 1999-03-09 | MIYOSHI YASUO; UJIIE KOJI |
| PROBLEM TO BE SOLVED: To provide a good-quality orientation film having an optical anisotropy and a magnetic anisotropy by a method wherein an upper limit is set to the size of phthalocyanine pigment particles in a micelle dispersion liquid. SOLUTION: A micelle dispersion liquid consisting of a phthalocyanine pigment is prepared for forming phthalocyanine pigment particles into a thin film, this micelle dispersion liquid is electrolyzed in a magnetic field generated by a superconducting magnet and at that time, in the case where a tin oxide transparent electrode and a Pt plate are respectively used for an anode and a cathode, a phthalocyanine thin film is formed on the transparent electrode. At this time, the magnetic field is vertically applied to the electrode. As the phthalocyanine pigment having a diamagnetic anisotropy, which is used as stated above, a phthalocyanine compound, which is shown by the formula (The M shows a center metal or H2 .), and the like, including an X-type phthalocyanine pigment, are exemplified. As the center metal in the formula, Cu, Ni, Fe, Co, Cr, Ti, Be, Mo, W and the like are exemplified. The size of the phthalocyanine pigment particles, which are carried in the micelle dispersion liquid, is set in a size of 300 nm or smaller. | ||||||
| 55 | 保護層を中心に有するスピン注入デバイス | JP2015506197 | 2013-04-15 | JP6225167B2 | 2017-11-01 | ボーエン, マルティン; アルアニ, メバレク; ブカリ, サミー; ボルペール, エリック; ウェーバー, ヴォルフガング; シュラー, ファブリス; ジョリ, ロイック |
| 56 | 保護層を中心に有するスピン注入デバイス | JP2015506197 | 2013-04-15 | JP2015519734A | 2015-07-09 | マルティン ボーエン，; メバレク アルアニ，; サミー ブカリ，; エリック ボルペール，; ヴォルフガング ウェーバー，; ファブリス シュラー，; ロイック ジョリ， |
| スピン注入デバイス(30)を製造する方法であって、a)環境による基板(10)の面(11)の酸化および/または汚染を制限または防止するために、基板(10)の面(11)上に金属保護層(22)を形成するステップであって、面が、磁気および電気伝導性であり、保護層が、反磁性または常磁性であるステップと、b)保護層上に上側層(32)を形成するステップであって、上側層が、基板および/または基板の面の磁気によって定義される振幅とスピン基準系とにしたがって保護層と上側層との間の界面のフェルミ準位の近くの電子状態のスピンバイアスを促進することが可能であり、上側層は、一つまたは複数の分子部位が、保護層に接して、常磁性モーメントを有する有機層であるステップとを含む方法。 | ||||||
| 57 | スピン偏極電流源 | JP2015506200 | 2013-04-15 | JP2015515144A | 2015-05-21 | マルティン ボーエン，; ヴォルフガング ウェーバー，; ロイック ジョリ，; エリック ボルペール，; ファブリス シュラー，; サミー ブカリ，; メバレク アルアニ， |
| スピン偏極電流源(2)を用い、フェルミ準位で電子の少なくとも75%を導く電流のスピン偏極を得るように電子をフィルタリングする方法であって、スピン偏極電流源は、−第1の面(11)が磁気特性を有する導電性基板(10)と、基板の第1の面に接する有機物層(20)とを含む偏極スピン注入デバイスと、−グランド材(30)と呼ばれる導電性材料であって、グランド材と基板との間に有機物層が配置された導電性材料と、−基板の第1の面とグランド材とに電気的に接続された電流源(40)と、を含み、前記方法は、基板の第1の面とグランド材との間で、−220℃より高い温度で、電流源による電子伝導電流の循環を含む。【選択図】図2 | ||||||
| 58 | Core composite membrane and its applications for use in a magnetic / non-magnetic / magnetic multilayer film | JP2008502228 | 2006-03-24 | JP2008537845A | 2008-09-25 | 中明 曽; 関祥 杜; ▲貞▼敏 洪; 天興 王; 高全 石; 秀峰 韓 |
| 【解決手段】本発明は磁気/非磁気/磁気多層フィルムに用いられるコア複合膜に関し、自由磁気層、隔離層とピンニングされた磁気層を包含する。 当該コア複合膜はただ隔離層がLB膜層であり、当該隔離層が絶縁性、導電的又は有半導体性質の材料からなる有機LB膜である。 当該コア複合膜は前記の自由磁気層、隔離層とピンニングされた磁気層がすべてLB膜層であってもよい。 その中にピンニングされた磁気層と自由磁気層が磁気のある材料有機膜で構成された。 当該コア複合膜が磁気抵抗スピンバルブセンサーに応用され、磁気抵抗スピンバルブセンサーの磁誘導単位を構成でき、磁気抵抗ランダムアクセスメモリに応用され記憶単位とされる。 当該コア複合膜が大面積範囲に均一性と一致性を保持し、そのプロセスが簡単で、コスト廉価であり、かつLB有機膜を利用し従来の隔離層と磁気層に代えて、デバイスを更に軽くし、さらに薄くし、更に加工と集積化させることができる。
【選択図】図１ |
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| 59 | Sputtering target material, magnetic recording medium and production method of sputtering target material | JP2005303259 | 2005-10-18 | JP2006144117A | 2006-06-08 | ZIANI ABDELOUAHAB; LATHROP MICHAEL; DARY FRANCOIS C |
| PROBLEM TO BE SOLVED: To provide a sputtering target material made from a master alloy containing a stoichiometrically favorable amount of carbide or carbon. SOLUTION: The sputtering target material includes an alloy comprising Cr-C, Cr-M-C or Cr-M 1-M 2-C (wherein C is contained at 0.5-20 at%; M is contained at 0.5-20 at% and is an element chosen from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta or W; M 1 is contained at 0.5-20 at% and is an element chosen from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W; and M 2 is contained at 0.5-10 at% and is an element chosen from the group consisting of Li, Mg, Al, Sc, Mn, Y and Te). A magnetic recording medium contains a substrate and at least one lower layer comprising the sputtering target material. In a method for manufacturing the sputtering target material, a powder material comprising a combination of elements containing a chromium alloy or a carbide- or carbon-containing master alloy is used. COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 60 | Regularly arranged nanostructure material | JP2004321602 | 2004-11-05 | JP2006130596A | 2006-05-25 | WAKI KOKICHI |
| <P>PROBLEM TO BE SOLVED: To provide a nanostructure body regularly arranged over a large area. <P>SOLUTION: This nanostructure material has regularly arranged pores each having a 2 to 200 nm diameter in a regularly arranged domain structure formed on a substrate and includes nanoparticles filling the pores. <P>COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
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