子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 141 | Thermal tuning of an optical device | EP14158186.8 | 2010-03-29 | EP2741123A1 | 2014-06-11 | Krishnamoorthy, Ashok V; Cunningham, John E; Li, Guoliang; Shubin, Ivan; Zheng, Xuezhe |
Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented on a substrate (such as silicon), and includes a thermally tunable optical waveguide with a high thermal resistance to the surrounding external environment and a low thermal resistance to a localized heater. In particular, the thermal resistances associated with thermal dissipation paths from a heater in the optical device to an external environment via electrodes and via the substrate are increased, while the thermal resistance between the optical waveguide and the heater is decreased. The heater element consists of a doped semiconductor layer with a rib waveguide (424) on top embedded in a surrounding cladding layer (416) having regions of high doping for improving electrical and termal contact between the electrode (418-1, 418-3) and via material (418-2, 418-4, 420-2, 420-1) and the heater part, (426-2, 422, 426-1).
|
||||||
| 142 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME | EP10833077 | 2010-11-04 | EP2507787A4 | 2013-07-17 | KOYAMA JUN; YAMAZAKI SHUNPEI |
| The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor. | ||||||
| 143 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME | EP10833077.0 | 2010-11-04 | EP2507787A1 | 2012-10-10 | KOYAMA, Jun; YAMAZAKI, Shunpei |
| The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor. | ||||||
| 144 | OPTICAL LOGIC GATE | EP08876105.1 | 2008-11-24 | EP2362950B1 | 2012-09-19 | BOVINO, Fabio Antonio; GIARDINA, Maurizio; LARCIPRETE, Maria Cristina; CENTINI, Marco; BELARDINI, Alessandro; SIBILIA, Concita; BERTOLOTTI, Mario; PASSASEO, Adriana; TASCO, Vittorianna; CINGOLANI, Roberto |
| 145 | ELECTRIC FIELD SENSING ELEMENT AND DISPLAY DEVICE MAKING USE OF THE SAME | EP06822929 | 2006-11-02 | EP2078980A4 | 2010-07-28 | NAKAZAWA AKIRA |
| An electric-field-sensitive element (1) includes: an optical function layer (5) that includes a metal oxide selected from the group consisting of tin dioxide, titanium dioxide and zinc oxide, and an insulating material covering the metal oxide, the optical function layer (5) having a visible light transmittance that changes through application of an electric field; and a first and second electrode layer (7, 9) that sandwich the optical function layer (5) therebetween. | ||||||
| 146 | STEADY-STATE-NON-EQUILIBRIUM DISTRIBUTION OF FREE CARRIERS AND PHOTON ENERGY UP-CONVERSION USING SAME | EP04754900 | 2004-06-10 | EP1636853A4 | 2007-04-04 | GARBER VALERY; BASKIN EMANUEL; EPSTEIN ALEXANDER; FAYER ALEXANDER; SPEKTOR BORIS |
| Methods and specialized media adapted to the formation of a steady-state, non-equilibrium distribution of free carriers using mesoscopic classical confinement. Specialized media is silicon-based (e.g., crystalline silicon, amorphous silicon, silicon dioxide) and formed from mesoscopic sized particles embedded with a matrix of wide-bandgap material, such as silicon dioxide. An IR to visible light imaging system (60, 61, 62, 63) is implemented around the foregoing. | ||||||
| 147 | Semiconductor with adsorbed compound | EP06004384.1 | 2006-03-03 | EP1699063A1 | 2006-09-06 | Ishii, Yoshio; Shinohara, Ryuji; Inoue, Takuya; Hioki, Takanori |
A semiconductor comprises a compound (A) adsorbed on a surface of the semiconductor, the compound (A) having at least one lone electron pair and substantially not undergoing in oxidation-reduction reactions, wherein the presence of the compound (A) negatively changes a flat band potential of the semiconductor with reference to that when the compound is absent. |
||||||
| 148 | STEADY-STATE-NON-EQUILIBRIUM DISTRIBUTION OF FREE CARRIERS AND PHOTON ENERGY UP-CONVERSION USING SAME | EP04754900.1 | 2004-06-10 | EP1636853A2 | 2006-03-22 | GARBER, Valery; BASKIN, Emanuel; EPSTEIN, Alexander; FAYER, Alexander; SPEKTOR, Boris |
| Methods and specialized media adapted to the formation of a steady-state, non-equilibrium distribution of free carriers using mesoscopic classical confinement. Specialized media is silicon-based (e.g., crystalline silicon, amorphous silicon, silicon dioxide) and formed from mesoscopic sized particles embedded with a matrix of wide-bandgap material, such as silicon dioxide. An IR to visible light imaging system (60, 61, 62, 63) is implemented around the foregoing. | ||||||
| 149 | Verfahren zum Aufbringen einer lichtblockierenden Schicht zwischen photoleitender Schicht und Spiegel bei der Herstellung eines optisch adressierbaren, ortsauflösenden Lichtmodulators OASLM | EP00101476.0 | 2000-01-26 | EP1039334A2 | 2000-09-27 | Dultz, Wolfgang, Prof.Dr.; Haase, Wolfgang, Prof.Dr.; Beresnev, Leonid, Dr.; Konshina, Elena, Dr.; Onokhov, Arkady, Dr. |
Das erfindungsgemäße Verfahren ist auf die gezielte Beeinflussung der Eigenschaften der zu erzeugenden lichtblockierenden Schicht ausgerichtet. Erfindungsgemäß erfolgt das Aufbringen der lichtblockierenden Schicht (4) und das Aufbringen der photoleitenden Schicht (3) in einem gemeinsamen Verfahrensschritt, bei dem sowohl die Dicke und Zusammensetzung der auf die transparente Elektrode (2) aufzubringenden photoleitenden Schicht (3), als auch die Dicke und Zusammensetzung der auf die photoleitenden Schicht (3) aufzubringenden lichtblockierenden Schicht (4) durch eine zeitbezogene Änderung der Variation der Gaszusammensetzung während des Abscheidungsprozesses bestimmt wird. Die Struktur der des optisch adressierbaren, ortsauflösenden Lichtmodulatoren OASLM kann aufgrund des erfindungsgemäßen Verfahrens optimal an den vorgesehenen Verwendungszweck angepaßt werden. Damit ist es möglich, OASLM mit viellagigen Schichtenfolgen herzustellen. |
||||||
| 150 | ELECTRO-OPTICAL AND MAGNETO-OPTICAL SENSING APPARATUS AND METHOD FOR CHARACTERIZING FREE-SPACE ELECTROMAGNETIC RADIATION | EP97926803 | 1997-05-30 | EP0902896A4 | 1999-12-08 | ZHANG XI-CHENG; LIBELO LOUIS FRANCIS; WU QI; RIORDAN JENIFER ANN; SUN FENG-GUO |
| Apparatus and method for characterizing free-space electromagnetic energy, suitable for real-time two-dimensional far-infrared imaging applications. The sensing technique is based on a non-linear coupling between a low-frequency electric or magnetic field (12) and a laser beam (16) in an electro-optic or magnetic-optic crystal (14, 32 or 54). A counter-propagating sensing technique (Fig. 1), and a co-linear sensing technique (Figs. 4 and 13) are described for longer radiated and optical beam interaction length, making imaging applications practical. | ||||||
| 151 | ELECTRO-OPTICAL AND MAGNETO-OPTICAL SENSING APPARATUS AND METHOD FOR CHARACTERIZING FREE-SPACE ELECTROMAGNETIC RADIATION | EP97926803.0 | 1997-05-30 | EP0902896A1 | 1999-03-24 | ZHANG, Xi-Cheng; LIBELO, Louis, Francis; WU, Qi; RIORDAN, Jenifer, Ann; SUN, Feng-Guo |
| Apparatus and method for characterizing free-space electromagnetic energy, suitable for real-time two-dimensional far-infrared imaging applications. The sensing technique is based on a non-linear coupling between a low-frequency electric or magnetic field (12) and a laser beam (16) in an electro-optic or magnetic-optic crystal (14, 32 or 54). A counter-propagating sensing technique (Fig. 1), and a co-linear sensing technique (Figs. 4 and 13) are described for longer radiated and optical beam interaction length, making imaging applications practical. | ||||||
| 152 | Semiconductor optical device utilizing nonlinear optical effect | EP95107261.0 | 1995-05-12 | EP0687938A2 | 1995-12-20 | Nakamura, Shigeru, c/o NEC Corporation; Tajima, Kazuhito, c/o NEC Corporation |
A semiconductor optical device having an optical waveguide (2a) which represents nonlinear refractive index change due to control light absorption. The waveguide (2a) has a bandgap wavelength that increases from its entrance (9) to its exit (10). In the case of the waveguide divided into first (4) to n-th regions, the bandgap wavelengths λ1, λ2, ..., λn-1, λn of the regions satisfy the relationship λ1 < λ2 < ...< λn-1 < λn. In the case of the waveguide not divided into regions, the bandgap wavelength λ of the waveguide monotonously increases from the entrance to the exit. This device can operate by the control light having a lower energy than the conventional one. |
||||||
| 153 | MULTI-BRANCH DIGITAL OPTICAL SWITCH | EP93916433.0 | 1993-06-07 | EP0647334A1 | 1995-04-12 | BROWN, James, Charles, Jr.; MOHAPATRA, Sarat, Kumar; TAIT, William, Charles |
| A multi-branch digital optical switch (10) having three branch waveguides through which light may exit. The multi-branch digital optical switch includes a main waveguide (12), two side branch waveguides (16, 18), and one center branch waveguide (14). The two side branch waveguides diverge symmetrically from the center branch waveguide at angles which are sufficiently small to allow modal evolution through the switch to be substantially adiabatic. Electric fields are used to raise the index of refraction of one side branch waveguide above the index of the center branch waveguide and to lower the index of refraction of the other side branch below the index of the center branch waveguide. The switch has an extinction ratio of 700:1 (28 dB) between its two side branches. | ||||||
| 154 | DISPLAY CELL, DISPLAY APPARATUS AND METHOD FOR MAKING SAME | PCT/CN2011070177 | 2011-01-11 | WO2011085675A8 | 2011-09-29 | CHEN JAU-SHIU; LIANG RONG-CHANG; TSAI MING-WEI |
| An electrophoretic display device comprises a plurality of pixels, each pixel has a cell area containing a plurality of charged pigment particles (43) dispersed between two opposite electrodes (411, 421), and a semiconducting passivation layer (45) is provided on one or both of the two opposite electrodes (411, 421). The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti, or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type donor or a p-type acceptor, the n-type donor is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca. | ||||||
| 155 | OPTICAL LOGIC GATE | PCT/IT2008000724 | 2008-11-24 | WO2010058432A9 | 2011-07-07 | BOVINO FABIO ANTONIO; GIARDINA MAURIZIO; LARCIPRETE MARIA CRISTINA; CENTINI MARCO; BELARDINI ALESSANDRO; SIBILIA CONCITA; BERTOLOTTI MARIO; PASSASEO ADRIANA; TASCO VITTORIANNA; CINGOLANI ROBERTO |
| Optical logic gate (1) having a second -harmonic generator element (15) that receives a first (sii) and a second optical input signal (si2) respectively having a first (?1) and a second angular frequency (?2) and respectively having a first (P; S) and a second (P; S) polarization, and which provides a second-harmonic optical signal (su3) having a third angular frequency (2?i, ?1+?2) and a third (P; S) polarization. The third angular frequency (2?i, ?1+?2) is equal to the sum of the first (?1) and the second angular frequency (?2). The third (P; S) polarization is a function of the first (P; S) and the second (P; S) polarization. The second-harmonic generator element (15) includes a second-harmonic generator layer (22) in a material having a non-null second-order optical tensor. | ||||||
| 156 | THIN FILM EMITTER-ABSORBER APPARATUS AND METHODS | PCT/US2006047450 | 2006-12-12 | WO2007070540A3 | 2008-07-03 | PUSCASU IRINA; JOHNSON ED |
| Methods and apparatus for providing a tunable absorption-emission band in a wavelength selective device are disclosed. A device for selectively absorbing incident electromagnetic radiation includes an electrically conductive surface layer including an arrangement of multiple surface elements. The surface layer is disposed at a nonzero height above a continuous electrically conductive layer. An electrically isolating intermediate layer defines a first surface that is in communication with the electrically conductive surface layer. The continuous electrically conductive backing layer is provided in communiication with a second surface of the electrically isolating intermediate layer. When combined with an infrared source, the wavelength selective device emits infrared radiation in at least one narrow band determined by a resonance of the device. In some embodiments, the device includes a control feature that allows the resonance to be selectively modified. The device has broad applications including gas detection devices and infrared imaging. | ||||||
| 157 | SPATIAL LIGHT MODULATOR | PCT/US0031762 | 2000-11-17 | WO0137033A3 | 2002-01-17 | WANG FEILING; LI KEWEN KEVIN; TSANG DEAN |
| A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material. | ||||||
| 158 | 電気光学変調器 | JP2017071594 | 2017-03-31 | JP2018173539A | 2018-11-08 | 藤方 潤一; 最上 徹; 中村 隆宏; 堀川 剛 |
| 【課題】低電流密度、低消費電力、高い変調度、低電圧駆動、および高速変調を、サブミクロンの領域内で実現可能な、改善されたキャリアプラズマ効果を示すシリコン・ベース電気光学変調器を提供する。 【解決手段】SiあるいはSiGe結晶を含む導波路構造を具備する電気光学変調器において、前記導波路構造内を伝播する光の電界方向が前記SiあるいはSiGe結晶の<110>方向とほぼ平行となるように設定されることを特徴とする電気光学変調器。 【選択図】図4 |
||||||
| 159 | 表示装置 | JP2017064916 | 2017-03-29 | JP2018170324A | 2018-11-01 | 山口 陽平; 鈴村 功 |
| 【課題】酸化物半導体を用いたTFTの信頼性を向上させる。 【解決手段】複数の画素が形成された表示領域を有する基板を含む表示装置であって、前記画素は第1の酸化物半導体12を用いた第1のTFTを含み、前記第1の酸化物半導体12の上には第1のゲート絶縁膜13が形成され、前記第1のゲート絶縁膜13は第1のシリコン酸化膜131と第1のアルミニウム酸化膜132の積層構造で形成され、前記第1のアルミニウム酸化膜131の上に第1のゲート電極14が形成されていることを特徴とする表示装置。 【選択図】図4 |
||||||
| 160 | エレクトロウェッティング装置の電極 | JP2016558405 | 2015-03-27 | JP6397506B2 | 2018-09-26 | サンドゥ スクディップ; ノボセロブ パベル |
QQ群二维码
意见反馈
意见反馈