序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
1 一种显示装置及制备方法 CN201310022596.0 2013-01-22 CN103091895B 2015-12-09 蔡佩芝; 董学; 陈希; 杨东
发明公开了一种显示装置及制备方法,用以解决现有技术中显示装置色域窄、光效低的问题。本发明实施例提供的一种显示装置,包括蓝光背光源和液晶显示面板,所述液晶显示面板包括上基板、下基板以及位于上基板和下基板之间的液晶层;所述上基板或下基板包括彩膜层,所述彩膜层包括黑矩阵图形,以及红像素图形和绿像素图形;所述红像素图形所在层或所述绿像素图形所在层与黑矩阵图形所在层之间设置有第一钝化层;所述红像素图形所在层和所述绿图形所在层之间设置有第二钝化层;所述红像素图形为蓝光激发下发射红光的量子点材料薄膜图形,绿像素图形为蓝光激发下绿光的量子点材料薄膜图形。
2 薄膜晶体管和图像显示装置 CN201280052807.9 2012-09-20 CN103975441A 2014-08-06 今村千寻; 伊藤学
发明通过使栅极电极(1)和电容器电极(2)为两层结构,使与绝缘基板(0)相接的第一层(1a、2a)为ITO,使与栅极绝缘层(3)相接的第二层(1b、2b)为金属化物层,能够形成具有高透光性和高导电性的栅极电极(1)和电容器电极(2)。因此,通过使用这样的栅极电极(1)和电容器电极(2),能够提高薄膜晶体管的透光性,并且能够提高利用该薄膜晶体管的图像显示装置的显示性能。
3 薄膜晶体管和图像显示装置 CN201280052807.9 2012-09-20 CN103975441B 2017-06-09 今村千寻; 伊藤学
发明通过使栅极电极(1)和电容器电极(2)为两层结构,使与绝缘基板(0)相接的第一层(1a、2a)为ITO,使与栅极绝缘层(3)相接的第二层(1b、2b)为金属化物层,能够形成具有高透光性和高导电性的栅极电极(1)和电容器电极(2)。因此,通过使用这样的栅极电极(1)和电容器电极(2),能够提高薄膜晶体管的透光性,并且能够提高利用该薄膜晶体管的图像显示装置的显示性能。
4 一种显示装置及制备方法 CN201310022596.0 2013-01-22 CN103091895A 2013-05-08 蔡佩芝; 董学; 陈希; 杨东
发明公开了一种显示装置及制备方法,用以解决现有技术中显示装置色域窄、光效低的问题。本发明实施例提供的一种显示装置,包括蓝光背光源和液晶显示面板,所述液晶显示面板包括上基板、下基板以及位于上基板和下基板之间的液晶层;所述上基板或下基板包括彩膜层,所述彩膜层包括黑矩阵图形,以及红像素图形和绿像素图形;所述红像素图形所在层或所述绿像素图形所在层与黑矩阵图形所在层之间设置有第一钝化层;所述红像素图形所在层和所述绿图形所在层之间设置有第二钝化层;所述红像素图形为蓝光激发下发射红光的量子点材料薄膜图形,绿像素图形为蓝光激发下绿光的量子点材料薄膜图形。
5 显示装置、显示装置制造方法和电子设备 CN201210258533.0 2012-07-24 CN102929037A 2013-02-13 户田淳; 平山照峰
发明涉及显示装置、显示装置制造方法和电子设备。所述显示装置包括光源部和发光层,所述光源部与各像素对应地出射激发光,所述发光层包含量子点并且与各所述像素对应地出射发射光,所述量子点基于所述激发光生成波长比所述激发光的波长更长的所述发射光。所述电子设备设置有上述显示装置。所述显示装置制造方法包括如下步骤:形成上述光源部;并且利用量子点形成上述发光层,所述量子点被构造成基于所述激发光生成波长比所述激发光的波长更长的所述发射光。根据本发明,能够以简单的结构进行从所述激发光到所述发射光的波长转换。因此,能够促进光的利用效率的提高。
6 Liquid crystal display device comprising a blue light source and a quantum-dot colour generating structure and method of manufacturing said device EP14150478.7 2014-01-08 EP2757409A1 2014-07-23 Cai, Peizhi; Dong, Xue; Chen, Xi; Yang, Dong

A liquid crystal display device and a method of manufacturing it are provided. The display device includes a blue light backlight source (1) and a liquid crystal display panel (2), wherein the liquid crystal display panel comprises a first substrate (22) and a second substrate (21). The first substrate or the second substrate includes a layered assembly, functioning as a colour filter and including a black matrix pattern (201), a red pixel pattern (202) and a green pixel pattern (203), wherein the red pixel pattern and the green pixel pattern are quantum dot material thin-film patterns respectively emitting red light and green light upon excitation by blue light. The red pixel pattern (202) is separated from the black matrix pattern (201) by an intervening first passivation layer (241); furthermore, the red and green pixel patterns are mutually separated by an intervening second passivation layer (242), and the green pixel pattern (203) is covered by a protection layer (243).

7 DISPLAY APPARATUS HAVING QUANTUM DOT LAYER US13217522 2011-08-25 US20120050632A1 2012-03-01 HSI-HSIN SHIH
The present invention relates to a display apparatus, which has a quantum dot layer. The quantum dot layer has a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix. The quantum dots when excited by the light convert the light wavelength so as to determine the color of each pixel of an image. As a result, the color filter of prior art can be omitted. Compared with the luminescent efficiency of the display apparatus of prior art, the luminescent efficiency of the display apparatus of the present invention can be raised.
8 Reflective coherent spatial light modulator US09834422 2001-04-13 US06552842B2 2003-04-22 John T. Simpson; Roger K. Richards; Donald P. Hutchinson; Marcus L. Simpson
A reflective coherent spatial light modulator (RCSLM) includes a subwavelength resonant grating structure (SWS), the SWS including at least one subwavelength resonant grating layer (SWL) have a plurality of areas defining a plurality of pixels. Each pixel represents an area capable of individual control of its reflective response. A structure for modulating the resonant reflective response of at least one pixel is provided. The structure for modulating can include at least one electro-optic layer in optical contact with the SWS. The RCSLM is scalable in both pixel size and wavelength. A method for forming a RCSLM includes the steps of selecting a waveguide material and forming a SWS in the waveguide material, the SWS formed from at least one SWL, the SWL having a plurality of areas defining a plurality of pixels.
9 Reflective coherent spatial light modulator US09834422 2001-04-13 US20020149584A1 2002-10-17 John T. Simpson; Roger K. Richards; Donald P. Hutchinson; Marcus L. Simpson
A reflective coherent spatial light modulator (RCSLM) includes a subwavelength resonant grating structure (SWS), the SWS including at least one subwavelength resonant grating layer (SWL) have a plurality of areas defining a plurality of pixels. Each pixel represents an area capable of individual control of its reflective response. A structure for modulating the resonant reflective response of at least one pixel is provided. The structure for modulating can include at least one electro-optic layer in optical contact with the SWS. The RCSLM is scalable in both pixel size and wavelength. A method for forming a RCSLM includes the steps of selecting a waveguide material and forming a SWS in the waveguide material, the SWS formed from at least one SWL, the SWL having a plurality of areas defining a plurality of pixels.
10 Organic/inorganic composite superlattice type optical modulator US086417 1998-05-29 US6124964A 2000-09-26 Yasuo Imanishi; Shingo Ishihara; Tomoyuki Hamada
In an organic/inorganic composite superlattice type optical modulator capable of entering/projecting light, and capable of modulating an optical characteristic such as transmittance, reflectivity, and a refractive index of light in response to an externally controlled electric field, or light, the organic/inorganic composite superlattice type optical modulator includes at least one type of a compound semiconductor layer and at least one type of an organic compound layer; the compound semiconductor layer and the organic compound layer are alternately stacked in greater than one period; at least one of the compound semiconductor layer and the organic compound layer being crystalline; and also a thickness of each of the layers is made larger than a Bohr radius of the compound semiconductor and smaller than 10 times the Bohr radius. As a result, this novel optical modulator can provide a high nonlinear characteristic by a semiconductor modulator, and a high response characteristic by an organic modulator.
11 電子素子における半導体粒子 JP2017541748 2016-02-01 JP2018510456A 2018-04-12 リーガー,ベルンハルト; ボエーム,エドガー; ヒラリウス,フォルカー; フルム,クリストフ; バニン,ウリ
本発明は、ナノ粒子およびカラーフィルタを含む、とりわけカラーディスプレイに関する。
12 薄膜トランジスタ、および画像表示装置、並びに薄膜トランジスタの製造方法 JP2013535880 2012-09-20 JP6098515B2 2017-03-22 今村 ちひろ; 伊藤 学
13 Semiconducting particles in electronic elements US16275636 2019-02-14 US20190189698A1 2019-06-20 Bernhard RIEGER; Edgar BOEHM; Volker HILARIUS; Christof PFLUMM; Uri BANIN
The present invention relates inter alia to a color display comprising nanoparticles and color filters.
14 SEMICONDUCTOR OPTICAL MODULATION ELEMENT US15577918 2016-06-01 US20180164654A1 2018-06-14 Yoshihiro Ogiso; Josuke Ozaki; Norihide Kashio; Nobuhiro Kikuchi; Masaki Kohtoku
To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type semi-insulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitance-loaded electrode is provided on the n-type clad layer.
15 ELECTRONIC ELEMENT AND DISPLAY US15548607 2016-02-01 US20180006092A1 2018-01-04 Bernhard RIEGER; Edgar BOEHM; Volker HILARIUS; Christof PFLUMM; Uri BANIN
The present invention relates inter alia to a color display comprising nanoparticles and color filters.
16 Article and Method for Implementing Electronic Devices on a Substrate Using Quantum Dot Layers US15350166 2016-11-14 US20170059892A1 2017-03-02 Faquir Chand Jain
Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.
17 Photo-luminescence liquid crystal display US11336815 2006-01-23 US20060238671A1 2006-10-26 Byung-ki Kim; Seung-jae Im; Jae-young Choi; Yoon-sok Kang; Seon-mi Yoon; Jae-hee Cho
A photo-luminescence (PL) liquid crystal display (LCD) is provided. The PL LCD includes a blue backlight, red and green phosphor layers, and blue photo-luminescent nano-dot (ND) layer. The PL LCD improves conventional problems of a narrow viewing angle and orientation. The PL LCD further includes an ultraviolet (UV) filter blocking UV contained in ambient light, thus preventing excitation of light-emitting layer due to external light and degradation in the contrast ratio due to unnecessary light emission.
18 薄膜トランジスタ、および画像表示装置 JP2013535880 2012-09-20 JPWO2013046606A1 2015-03-26 ちひろ 今村; 伊藤 学; 学 伊藤
ゲート電極(1)およびキャパシタ電極(2)を二層構造とし、絶縁基板(0)と接する第一層(1a、2a)をITO、ゲート絶縁層(3)と接する第二層(1b、2b)を金属酸化物層とすることで、高い光透過性および高導電性を有するゲート電極(1)およびキャパシタ電極(2)の形成が可能となる。それゆえ、このようなゲート電極(1)およびキャパシタ電極(2)を用いることで、薄膜トランジスタの光透過性の向上、および当該薄膜トランジスタを利用した画像表示装置の表示性能の向上が可能となる。
19 Display device, method of manufacturing the same, and electronic apparatus JP2011172745 2011-08-08 JP2013037165A 2013-02-21 TODA ATSUSHI; HIRAYAMA TERUO
PROBLEM TO BE SOLVED: To provide a display device etc. which can facilitate improving light utilization efficiency.SOLUTION: A display device includes: a light source section that emits excitation light for each pixel; and a light emitting layer that includes a quantum dot and emits emission light for each of the pixels. The quantum dot generates, based on the excitation light, the emission light having a wavelength longer than a wavelength of the excitation light. The wavelength conversion from the excitation light to the emission light is performed with a simple configuration.
20 Optical application sensor JP21023588 1988-08-24 JPH0786603B2 1995-09-20 基次 小倉; 俊哉 横川
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