| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | Optical modulator | US15468115 | 2017-03-24 | US09897825B2 | 2018-02-20 | Kei Katou; Norikazu Miyazaki; Ryo Shimizu |
| An optical modulator includes a substrate having an electro-optic effect, an optical waveguide that is formed in the substrate, and a modulation electrode (not illustrated) for modulating a light wave that propagates through the optical waveguide. In the optical modulator, a light-receiving element is disposed on the substrate, and the light-receiving element includes a light-receiving section that receives a light wave that propagates through the optical waveguide, and the light-receiving section is located on the downstream side of a center of the light-receiving element in a light wave propagating direction. | ||||||
| 42 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE | US14437073 | 2014-09-05 | US20160246129A1 | 2016-08-25 | Jiaoming LU; Teruaki SUZUKI |
| The present disclosure provides a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a first substrate and a second substrate disposed opposite to the first substrate. The first substrate includes a first common electrode and a dielectric layer. The second substrate includes a second common electrode and a pixel electrode. The dielectric layer includes at least two dielectric sub-layers in a region corresponding to each pixel unit. Dielectric constants of the at least two dielectric sub-layer are different from each other. | ||||||
| 43 | OPTICAL MODULATOR | US14528183 | 2014-10-30 | US20150138619A1 | 2015-05-21 | Shinji IWATSUKA; Kenji SASAKI; Masamichi TANIGUCHI |
| An optical modulator includes a single-crystal substrate, a lithium niobate film formed on a main surface of the single-crystal substrate, the lithium niobate film being an epitaxial film and having a ridge, a buffer layer formed on the ridge, a first electrode formed on the buffer layer, and a second electrode separated from the first electrode, the second electrode being in contact with the lithium niobate film. | ||||||
| 44 | Electro-optical modulator | US13395329 | 2010-06-08 | US09002144B2 | 2015-04-07 | Junichi Fujikata; Jun Ushida; Akio Toda; Motofumi Saitoh |
| A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion. | ||||||
| 45 | OPTICAL WAVEGUIDE ELEMENT AND METHOD OF MANUFACTURING THE SAME | US14233709 | 2012-07-19 | US20140254972A1 | 2014-09-11 | Tetsuya Fujino; Masanao Kurihara; Takashi Shinriki; Toru Sugamata |
| An object of the present invention is to provide a manufacturing method of an optical waveguide element whose DC drift is suppressed, and to provide a manufacturing method of an optical waveguide element, capable of adjusting DC drift in the middle of manufacturing processes so as to improve a fabrication yield. The method of manufacturing an optical waveguide element comprises a step of forming an optical waveguide in a substrate having an electro-optic effect, a step of forming a buffer layer, and a step of forming an electrode, in which one stage or a plurality of stages of an interface diffusion layer heat adjustment step (S1, S2) for adjusting a concentration distribution of a specific substance in the buffer layer by heating is included after the buffer layer is formed. | ||||||
| 46 | OPTICAL WAVEGUIDE DEVICE | US14114449 | 2012-04-27 | US20140050440A1 | 2014-02-20 | Masayuki Ichioka; Mitsuru Sakuma; Junichiro Ichikawa |
| Provided is an optical waveguide device capable of reducing stress that occurs inside an optical waveguide substrate due to a difference in a coefficient of thermal expansion. The optical waveguide device (10) includes an optical waveguide substrate (11) having a thickness of 30 μm or less, and a liquid crystal polymer substrate (12) which holds the optical waveguide substrate (11) and has permittivity lower than that of the optical waveguide substrate (11). The optical waveguide substrate (11) and the liquid crystal polymer substrate (12) are bonded to each other by an adhesive layer (14). Coefficients of thermal expansion of the optical waveguide substrate (11) and the liquid crystal polymer substrate (12) have anisotropy in each substrate plane, and a relative direction between the optical waveguide substrate (11) and the liquid crystal polymer substrate (12) is adjusted in such a manner that anisotropic axial directions of the optical waveguide substrate (11) and anisotropic axial directions the liquid crystal polymer substrate (12) are aligned. | ||||||
| 47 | Display cell, display apparatus and method for making same | US12930485 | 2011-01-07 | US08638492B2 | 2014-01-28 | Jau Shiu Chen; Rong Chang Liang; Ming Wei Tsai |
| In an electrophoretic display device comprising a plurality of pixels, each pixel having a cell area containing a plurality of charged pigment particles dispersed between two opposite electrodes, a semiconducting passivation layer is provided on one or both of the two opposite electrodes. The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type doner or a p-type acceptor, the n-type doner is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca. | ||||||
| 48 | Switchable glazings | US13120313 | 2009-09-22 | US08405901B2 | 2013-03-26 | Joseph Jeremy Boote |
| A switchable film assembly having remote electrical connections comprises an active layer between first and second electrically conductive layers. The active layer has an optical transmission which changes upon projecting an electric field therethrough. An electrical connection connects the film to a power supply and can comprise a remote electrical connector region provided remote to the first and second electrically conductive layers, such upon connecting the film assembly to the power supply, an electrical field may be projected through at least a portion of the switchable film assembly thereby changing the optical transmission of the active layer. | ||||||
| 49 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME | US13418175 | 2012-03-12 | US20130037829A1 | 2013-02-14 | Chong-Sup CHANG; Yoon-Ho KHANG; Se-Hwan YU; Yong-Su LEE; Min KANG; Myoung-Geun CHA; Ji-Seon LEE |
| A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate. | ||||||
| 50 | Low switching voltage, fast time response digital optical switch | US12673341 | 2007-08-14 | US08326096B2 | 2012-12-04 | Luigi Pierno; Massimiliano Dispenza |
| Disclosed herein is a digital electro-optical switch (1) comprising: an electro-optical substrate (3); a Y-shaped optical waveguide (2) formed in the substrate (3) and including an input branch (4) configured to be connected to an input optical waveguide, and two output branches (5) configured to be connected to respective output optical waveguides; and electrically conductive electrodes (6, 7) formed on the substrate (3) and including an inner electrode (7) arranged between the output branches (5), substantially at a branching area of the optical waveguide (2), and two outer electrodes (6) arranged outside the output branches (5), on opposite sides of the inner electrode (7), the outer electrodes (6) being electrically operable to make the electro-optical switch (1) operative between a first switching state wherein transmission of optical energy is enhanced between the input branch (4) and a first one of the output branches (5), and substantially inhibited in a second one of the output branches (5), and a second switching state wherein transmission of optical energy is enhanced between the input branch (4) and the second output branch (5), and substantially inhibited in the first output branch (5); and an optically transparent, electrically conductive film (9) arranged between each electrode (6, 7) and the substrate (3). | ||||||
| 51 | ELECTRO-OPTICAL MODULATOR | US13395329 | 2010-06-08 | US20120257850A1 | 2012-10-11 | Junichi Fujikata; Jun Ushida; Akio Toda; Motofumi Saitoh |
| A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion. | ||||||
| 52 | SWITCHABLE GLAZINGS | US13120313 | 2009-09-22 | US20110170170A1 | 2011-07-14 | Joseph Jeremy Boote |
| A switchable film assembly having remote electrical connections comprises an active layer between first and second electrically conductive layers. The active layer has an optical transmission which changes upon projecting an electric field therethrough. An electrical connection connects the film to a power supply and can comprise a remote electrical connector region provided remote to the first and second electrically conductive layers, such upon connecting the film assembly to the power supply, an electrical field may be projected through at least a portion of the switchable film assembly thereby changing the optical transmission of the active layer. | ||||||
| 53 | Liquid crystal display device | US11404834 | 2006-04-17 | US07692737B2 | 2010-04-06 | Chi Hyuck Park; Tae Bong Jung |
| A liquid crystal display device includes a liquid crystal display panel, a compensation film for compensating a viewing angle decline caused by improper alignment of liquid crystal molecules in the liquid crystal display panel, and an isotropic layer between the compensation film and the liquid crystal display panel. | ||||||
| 54 | SEMICONDUCTOR-BASED BROADBAND MODULATORS | US12198307 | 2008-08-26 | US20100054656A1 | 2010-03-04 | Leslie A. Kolodziejski; Gale S. Petrich; Orit Shamir |
| An optical modulator is provided. The optical modulator includes a ridge-shaped active region comprising a plurality of alternating high and low index layers. The ridge-shaped active region is used to confine a selective optical mode for optical modulation. A plurality of oxidized layers positioned so as to confine the selective optical mode in the middle region of the ridge-shaped active region. The oxidized layers enable the optical modulator to withstand high operating voltages both in reverse and forward bias without concern of breakdown or carrier loss. | ||||||
| 55 | LITHIUM NIOBATE MODULATOR HAVING A DOPED SEMICONDUCTOR STRUCTURE FOR THE MITIGATION OF DC BIAS DRIFT | US12196936 | 2008-08-22 | US20100046878A1 | 2010-02-25 | Keyvan Sayyah; Robert R. Hayes |
| There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift. | ||||||
| 56 | Hybrid Strip-Loaded Electro-Optic Polymer/Sol-Gel Modulator | US12569588 | 2009-09-29 | US20100014800A1 | 2010-01-21 | CHRISTOPHER T. DEROSE; ROLAND HIMMELHUBER; ROBERT A. NORWOOD; NASSER N. PEYGHAMBARIAN |
| A hybrid strip-loaded EO polymer/sol-gel modulator in which the sol-gel core waveguide does not lie below the active EO polymer waveguide increases the higher electric field/optical field overlap factor Γ and reduces inter-electrode separation d thereby lowering the modulator's half-wave drive voltage Vπ, reducing insertion loss and improving extinction. The strip-loaded modulator comprises an EO polymer layer that eliminates optical scattering caused by sidewall roughness due to etching. Light does not encounter rough edges as it transitions to and from the sol-gel and EO polymer waveguides. This reduces insertion loss. | ||||||
| 57 | Low bias drift modulator with buffer layer | US11189449 | 2005-07-26 | US07324257B2 | 2008-01-29 | Gregory J. McBrien; Karl Kissa; Glen Drake; Kate Versprille |
| The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses. | ||||||
| 58 | Array substrate for liquid crystal display device and method of fabricating the same | US11641702 | 2006-12-20 | US20070268422A1 | 2007-11-22 | Moo-Hyoung Song; Sung-Jin Hong |
| An array substrate for a liquid crystal display device, includes: a gate line and a data line on a substrate, the data line crossing the gate line to define a pixel region; an insulating layer between the gate line and the data line; a switching element adjacent to a crossing of the gate line and the data line; a pixel electrode connected to the switching element, the pixel electrode disposed in the pixel region; and a first buffer pattern at a first side of one of the gate line and the date line and overlapped with the other one of the gate line and the date line, the first buffer pattern being disposed at the same layer as the one of the gate line and the date line. | ||||||
| 59 | Method and apparatus for phase shifiting an optical beam in an optical device | US11197601 | 2005-08-04 | US07280712B2 | 2007-10-09 | Ansheng Liu |
| An apparatus and method for high speed phase modulation of optical beam. For one embodiment, an apparatus includes an optical waveguide having adjoining first and second regions disposed in semiconductor material. The first and second regions have opposite doping types. A first buffer is disposed along the optical waveguide. A first higher doped region of semiconductor material is also included outside an optical path of the optical waveguide. An inner portion of the first higher doped region is adjoining and coupled to the first region of the optical waveguide. An outer portion of the first higher doped region is adjoining the first buffer. The first higher doped region has a higher doping concentration than a doping concentration within the optical path of the optical waveguide. A first contact having an inner portion adjoining and coupled to the first higher doped region is also included. The first contact has an outer portion adjoining the first buffer. | ||||||
| 60 | Electro-Optic Polymer Waveguide Devices Incorporating Organically Modified Sol-Gel Clads | US11685629 | 2007-03-13 | US20070154161A1 | 2007-07-05 | Louis Bintz; Raluca Dinu; Danliang Jin |
| A method including poling an optical waveguide device including an optical waveguide core, an electrode, and an organically modified sol-gel layer. | ||||||
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