| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 181 | Optical waveguide device | JP34715692 | 1992-12-25 | JPH05257105A | 1993-10-08 | Masaharu Doi; Minoru Kiyono; Yoshinobu Kubota; Teruo Kurahashi; Tadao Nakazawa; Kunio Sugata; Takashi Yamane; 忠雄 中沢; 嘉伸 久保田; 輝雄 倉橋; 正治 土居; 隆志 山根; 實 清野; 邦男 菅田 |
| PURPOSE:To provide an optical waveguide device which can operate stably for a long period. CONSTITUTION:The optical waveguide device is constituted of an optical waveguide 2 formed on the surface of an electro-optical crystal base plate 1, a buffer layer 3 formed on the optical waveguide 2, and a driving electrode 4 for applying an electric field to change the refractive index of the optical waveguide 2 formed on the buffer layer 3. The buffer layer 3 consists of the mixture of silicon oxide and at least one oxide of metal or semiconductor elements selected from groups III-VIII, Ib, and IIb metals except for silicon, or a transparent insulating body of silicon and oxide of element selected from metal elements and semiconductor elements. | ||||||
| 182 | Waveguide type optical device | JP9903691 | 1991-04-30 | JPH04328720A | 1992-11-17 | KAWASHIMA HISAO |
| PURPOSE:To prevent light output power from varying with the polarization state of input light. CONSTITUTION:Optical waveguides 12 and 13 which have a higher refractive index than a substrate 1 are formed on the substrate 11 and control electrodes 15 and 16 are formed on the close parts of the optical waveguides 12 and 13 across a buffer layer 14. The length of the optical waveguides 12 and 13 which are close at the part of a directional coupler 17 is set to the complete coupling length for TE polarized light and the complete coupling length for TM polarized light is set shorter than the complete coupling length for the TE polarized light. Further, a TE polarized light absorbing film 19 is formed on the buffer layer 14 between the directional coupler 17 and a projection end with specific length. | ||||||
| 183 | Planar type waveguide | JP21154287 | 1987-08-27 | JPS6375725A | 1988-04-06 | UIRIAMU SHII ROBINSON; NOOMAN EI SANFUOODO |
| 184 | Display device | US15029999 | 2014-12-12 | US10146075B2 | 2018-12-04 | Takeaki Hirasawa; Hisanori Tsuboi |
| There is provided a display device including: a display cell (20); a surrounding member (30) provided around the display cell (20); a cover film (10) provided on front side of the display cell (20) and the surrounding member (30); a relay member (40) provided on rear side of the display cell (20) and the surrounding member (30), and facing a margin between the display cell (20) and the surrounding member (30); and an adhesive layer (50) provided between the display cell (20) and the relay member (40), and between he surrounding member (30) and the relay member (40). | ||||||
| 185 | FUNCTIONAL OPTICAL DEVICE THAT INTERGRATES OPTICAL WAVEGUIDE WITH LIGHT-RECEIVING ELEMENT ON SEMICONDUCTOR SUBSTRATE | US15909263 | 2018-03-01 | US20180252865A1 | 2018-09-06 | Yoshihiro Yoneda; Takuya Okimoto |
| A functional optical device is disclosed. The optical functional device integrates a coupling unit, a light-receiving element and an optical waveguide on a semiconductor substrate. The coupling unit extracts an optical signal by interfering between signal light and local light. The optical waveguide carries the optical signal from the coupling unit to the light-receiving element. The light-receiving element receives the optical signal. The semiconductor substrate provides a heavily doped conducting layer and a buffer layer that is un-doped or lightly doped with impurities by density smaller than density of impurities in the conducting layer. The conducting layer and the buffer layer continuously and evenly expand from the optical waveguide to the light-receiving element. | ||||||
| 186 | Detecting applied forces on a display | US15199307 | 2016-06-30 | US10061428B2 | 2018-08-28 | Petr Shepelev; Byunghwee Park |
| The input devices described herein include force sensor electrodes that use capacitive sensing to measure the force with which an input object (e.g., a finger or stylus) presses down on the input device. To measure this force, the input device includes a compressible layer disposed between a backlight of a display in the input device and a cover window of the display. In one embodiment, the compressible layer is disposed between the backlight and a transparent thin-film transistor (TFT) layer in the display. In one embodiment, the compressible layer includes an air gap which has a thickness defined by adhesive material disposed on at least two edges of the display. | ||||||
| 187 | THIN-FILM-TRANSISTOR (TFT) ARRAY PANEL WITH STRESS ELIMINATION LAYER AND METHOD OF MANUFACTURING THE SAME | US15937866 | 2018-03-28 | US20180219027A1 | 2018-08-02 | Guoren HU |
| The present invention provides a thin-film-transistor (TFT) array panel and manufacturing method of the same. The TFT array panel comprises a flexible baseplate, a buffer layer, and a display-element layer. The buffer layer is disposed on the flexible baseplate, a stress-elimination portion is disposed on the buffer layer, the stress-elimination portion is used to eliminate a stress of the flexible baseplate; the display-element layer is disposed on the buffer layer. The present invention is able to decrease the stress of the flexible baseplate, to prevent too large of a stress of the flexible baseplate. | ||||||
| 188 | Liquid crystal display panel and liquid crystal display device | US14437073 | 2014-09-05 | US09964790B2 | 2018-05-08 | Jiaoming Lu; Teruaki Suzuki |
| The present disclosure provides a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a first substrate and a second substrate disposed opposite to the first substrate. The first substrate includes a first common electrode and a dielectric layer. The second substrate includes a second common electrode and a pixel electrode. The dielectric layer includes at least two dielectric sub-layers in a region corresponding to each pixel unit. Dielectric constants of the at least two dielectric sub-layer are different from each other. | ||||||
| 189 | OPTICAL MODULATOR AND OPTICAL MODULE | US15650222 | 2017-07-14 | US20180031945A1 | 2018-02-01 | Yasuhiro OHMORI; Yoshinobu KUBOTA; Masaharu DOI; Masaki SUGIYAMA |
| An optical modulator includes an optical modulator chip configured to optically modulate an optical signal using an electrical signal input thereto; and a relay substrate configured to relay and couple the electrical signal to the optical modulator chip. The optical modulator chip includes a signal electrode and a ground electrode for the electrical signal, formed along a waveguide for the optical signal. One end of the optical modulator chip is arranged to face the relay substrate. An electrode connection portion coupling the electrical signal to the relay substrate by wire is provided at the one end. A distance between a tip of one end of the signal electrode in the electrode connection portion and the end of the optical modulator chip is less than a distance between a tip of an end of the ground electrode in the electrode connection portion and the end of the optical modulator chip. | ||||||
| 190 | DETECTING APPLIED FORCES ON A DISPLAY | US15199307 | 2016-06-30 | US20180004336A1 | 2018-01-04 | Petr SHEPELEV; Byunghwee PARK |
| The input devices described herein include force sensor electrodes that use capacitive sensing to measure the force with which an input object (e.g., a finger or stylus) presses down on the input device. To measure this force, the input device includes a compressible layer disposed between a backlight of a display in the input device and a cover window of the display. In one embodiment, the compressible layer is disposed between the backlight and a transparent thin-film transistor (TFT) layer in the display. In one embodiment, the compressible layer includes an air gap which has a thickness defined by adhesive material disposed on at least two edges of the display. | ||||||
| 191 | LIGHT MODULATOR AND IMAGE DISPLAY DEVICE | US15461890 | 2017-03-17 | US20170269394A1 | 2017-09-21 | Hiroto TOMIOKA |
| A light modulator according to the invention includes an optical waveguide formed of a material having an electro-optic effect, a buffer layer formed on the optical waveguide, and a pair of electrodes formed on the buffer layer, the width in the direction, in which the pair of electrodes are opposed to each other, of the buffer layer located on the side of the electrodes opposed to the optical waveguide is smaller than the width in the direction, in which the pair of electrodes are opposed to each other, of the buffer layer located on the optical waveguide side. | ||||||
| 192 | LCD AND AN LC MODULE OF NARROW BEZEL THEREOF | US14646015 | 2015-02-28 | US20160370638A1 | 2016-12-22 | Yanxue ZHANG |
| The present invention provides an LCD and an LC module of narrow bezel thereof. The LC module of narrow bezel includes a case; an LC panel; a BLU; and a buffer material, wherein the LC panel and the BLU are stacked in the case and widths of the LC panel and the BLU are the same. The buffer material is set on one side or two sides of a region between the BLU and the case. The present invention provides an LCD and an LC module of narrow bezel thereof. The widths of the LC panel and the BLU are the same and the buffer material is set on one side or two sides of a region between the BLU and the case so the interval between the LC module and the bezel (the case) becomes narrow and the narrow bezel of the LCD is performed. | ||||||
| 193 | Liquid crystal display and manufacturing method thereof | US14490355 | 2014-09-18 | US09496295B2 | 2016-11-15 | Koichi Sugitani; Hoon Kang; Yeun Tae Kim; Kyung Tae Chae |
| A method of manufacturing a liquid crystal display includes: forming a sacrificial layer by stacking a non-photosensitive resin; initiating formation of an etch stop layer on the sacrificial layer; forming a photoresist pattern; completing the etch stop layer using the photoresist pattern; ashing the photoresist pattern and the sacrificial layer by using the completed etch stop layer as a mask; forming a microcavity by removing the sacrificial layer; and forming a liquid crystal layer in the microcavity. The horizontal area occupied by the sacrificial layer is reduced by forming the common electrode or the etch stop layer at an upper side, thereby increasing the aperture ratio. Further, the vertical electric field is generated without distortion by horizontally forming the common electrode on the sacrificial layer and forming no common electrode on the sidewall thereof. | ||||||
| 194 | Optical waveguide element | US14389416 | 2013-03-29 | US09291838B2 | 2016-03-22 | Motohiro Takemura; Masanao Kurihara; Tetsuya Fujino |
| An object of the present invention is to provide an optical waveguide element that effectively diffuses charges accumulated in a substrate, and suppress DC drift or temperature drift. The optical waveguide element includes a substrate having an electro-optical effect, optical waveguides formed in the substrate, a buffer layer (BF layer) formed on the substrate, and modulation electrodes (signal electrode and ground electrode) that are formed on the buffer layer and modulate optical waves propagating through the optical waveguides, a charge diffusion layer that diffuses charges generated in the substrate is formed between the substrate and the buffer layer, and the charge diffusion layer is electrically connected with a ground electrode constituting the modulation electrode. | ||||||
| 195 | Optical waveguide element and method of manufacturing the same | US14233709 | 2012-07-19 | US09223158B2 | 2015-12-29 | Tetsuya Fujino; Masanao Kurihara; Takashi Shinriki; Toru Sugamata |
| An object of the present invention is to provide a manufacturing method of an optical waveguide element whose DC drift is suppressed, and to provide a manufacturing method of an optical waveguide element, capable of adjusting DC drift in the middle of manufacturing processes so as to improve a fabrication yield. The method of manufacturing an optical waveguide element comprises a step of forming an optical waveguide in a substrate having an electro-optic effect, a step of forming a buffer layer, and a step of forming an electrode, in which one stage or a plurality of stages of an interface diffusion layer heat adjustment step (S1, S2) for adjusting a concentration distribution of a specific substance in the buffer layer by heating is included after the buffer layer is formed. | ||||||
| 196 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF | US14490355 | 2014-09-18 | US20150200214A1 | 2015-07-16 | Koichi Sugitani; Hoon Kang; Yeun Tae Kim; Kyung Tae Chae |
| A method of manufacturing a liquid crystal display includes: forming a sacrificial layer by stacking a non-photosensitive resin; initiating formation of an etch stop layer on the sacrificial layer; forming a photoresist pattern; completing the etch stop layer using the photoresist pattern; ashing the photoresist pattern and the sacrificial layer by using the completed etch stop layer as a mask; forming a microcavity by removing the sacrificial layer; and forming a liquid crystal layer in the microcavity. The horizontal area occupied by the sacrificial layer is reduced by forming the common electrode or the etch stop layer at an upper side, thereby increasing the aperture ratio. Further, the vertical electric field is generated without distortion by horizontally forming the common electrode on the sacrificial layer and forming no common electrode on the sidewall thereof. | ||||||
| 197 | Display device | US13783468 | 2013-03-04 | US09062855B2 | 2015-06-23 | Chang-Yong Jeong; Hyun-Geun Kim |
| A display device includes a substrate, a light emitting element layer that is on the substrate and that includes a light emitting element, an encapsulation thin film layer that is on the substrate and the light emitting element layer and that encapsulates the light emitting element layer, a buffer film on the encapsulation thin film layer and adhered to the encapsulation thin film layer, and an optical film on the buffer film and adhered to the buffer film. | ||||||
| 198 | OPTICAL WAVEGUIDE ELEMENT | US14389416 | 2013-03-29 | US20150078701A1 | 2015-03-19 | Motohiro Takemura; Masanao Kurihara; Tetsuya Fujino |
| An object of the present invention is to provide an optical waveguide element that effectively diffuses charges accumulated in a substrate, and suppress DC drift or temperature drift. The optical waveguide element includes a substrate having an electro-optical effect, optical waveguides formed in the substrate, a buffer layer (BF layer) formed on the substrate, and modulation electrodes (signal electrode and ground electrode) that are formed on the buffer layer and modulate optical waves propagating through the optical waveguides, a charge diffusion layer that diffuses charges generated in the substrate is formed between the substrate and the buffer layer, and the charge diffusion layer is electrically connected with a ground electrode constituting the modulation electrode. | ||||||
| 199 | Etch-selective bonding layer for hybrid photonic devices | US13461634 | 2012-05-01 | US08774582B1 | 2014-07-08 | Matthew Jacob-Mitos; Gregory Alan Fish; Alexander W. Fang |
| “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected. | ||||||
| 200 | MILLIMETER-WAVE ELECTRO-OPTIC MODULATOR | US13623525 | 2012-09-20 | US20140079351A1 | 2014-03-20 | Julien Macario; Peng Yao; Dennis W. Prather |
| A lithium niobate-based electro-optic modulator may include a ridged optical waveguide structure and/or a thinned substrate. | ||||||
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