| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | Stabilized titanate thin film structures | US10646098 | 2003-08-22 | US07142760B2 | 2006-11-28 | Harry L. Tuller; Ytshak Avrahami |
| An optical structure is provided. The optical structure includes a substrate having a surface. A modified barium titanate is deposited on the surface of the substrate. | ||||||
| 122 | Liquid crystal display device | US11404834 | 2006-04-17 | US20060238680A1 | 2006-10-26 | Chi Park; Tae Jung |
| A liquid crystal display device includes a liquid crystal display panel, a compensation film for compensating a viewing angle decline caused by improper alignment of liquid crystal molecules in the liquid crystal display panel, and an isotropic layer between the compensation film and the liquid crystal display panel. | ||||||
| 123 | Electro-optic waveguide device capable of suppressing bias point DC drift and thermal bias point shift | US11131634 | 2005-05-18 | US20060233494A1 | 2006-10-19 | Hirotoshi Nagata |
| The present invention discloses an electro-optic waveguide device such as a modulator. The device has an electro-optic substrate having optical waveguides within the substrate at or near an upper surface. A buffer layer is formed on the top surface of the electro-optic substrate. A novel block layer is formed on the buffer layer surface, which can suppress or lessen an unwanted occurrence of chemical reactions at or near the surface of the buffer layer. A charge bleed off layer is formed on the block layer, which has a certain amount of electrical conductivity to bleed off any electrical charges generated on or in the electro-optic waveguide device. Electrodes are on the charge bleed off layer, which can provide electrical signals to the optical waveguides through the buffer layer, the block layer, and the charge bleed off layer. | ||||||
| 124 | Optical modulator | US10990383 | 2004-11-18 | US07099524B2 | 2006-08-29 | Masaki Sugiyama |
| The present invention relates to an optical modulator capable of preventing a disconnection of an electrode and improving a discontinuity of a characteristic impedance while realizing a polarization inverting area and a ridge waveguide in a single optical modulator. In the optical modulator, a first electrode is composed of an inverting area electrode portion formed on an upper portion of one of first and second waveguides in the polarization inverting area, a non-inverting area electrode portion formed on an upper portion of the other one of the first and second waveguides in the other area, and a connection portion for making a connection between the inverting area electrode portion and the non-inverting area electrode portion at the boundary between the polarization inverting area and the other area. A supporting mechanism for supporting the connection portion of the first electrode is provided in a groove. | ||||||
| 125 | Optical waveguide type optical modulator and production method therefor | US10380585 | 2001-09-18 | US06956980B2 | 2005-10-18 | Hirotoshi Nagata; Yasuyuki Miyama; Futoshi Yamamoto; Takashi Shinriki; Ryo Shimizu |
| There is provided a high performance optical waveguide type optical modulator with excellent long term reliability, in which contamination of the buffer layer in a forming process of a signal field adjustment region on the buffer layer by a lift-off method or an etching method, is prevented and DC drift thus suppressed. The optical waveguide type optical modulator 10 comprises a substrate 11 having an electro-optic effect, optical waveguides 12 formed on the surface of this substrate 11, a traveling-wave type signal electrode 13a and ground electrodes 13b which are provided on the substrate 11 and control a lightwave, and a buffer layer 14 provided between the electrodes 13 and the optical waveguides 12, and furthermore, a dielectric layer 15 is provided on the entire surface of the buffer layer 14 on the side of the electrodes 13, and a signal field adjustment region 16 which has a wider width than that of the traveling-wave type signal electrode 13a and is made of a material with a higher refractive index than that of the dielectric layer 15 is formed between the dielectric layer 15 and the traveling-wave type signal electrode 13a. | ||||||
| 126 | Multi-layer electro-optic polymer modulators with reduced optical coupling loss | US10370785 | 2003-02-20 | US06895162B2 | 2005-05-17 | Louis J. Bintz; Raluca Dinu |
| An electro-optic waveguide device, comprising (a) a first polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 μm to about 3.2 μm; (b) a first polymer clad having a refractive index of about 1.53 to about 1.61 and a thickness of about 1.0 μm to about 3.0 μm; (c) an electro-optic polymer core having a refractive index of about 1.54 to about 1.62 and a thickness of about 1.0 μm to about 3.0 μm; and (d) a second polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 μm to about 3.2 μm. | ||||||
| 127 | Array substrate for IPS mode liquid crystal display device and method of fabricating the same | US10985908 | 2004-11-12 | US20050088601A1 | 2005-04-28 | Yun-Bok Lee |
| In a method of forming an array substrate for in-plane switching liquid crystal display device a first metal layer is formed on a substrate and then patterned using a first mask so as to form a gate line having a gate electrode and a common line having a plurality of common electrodes. A gate insulation layer is formed on the substrate to cover the patterned first metal layer. A semiconductor layer is formed on the gate insulation layer using a second mask, wherein the semiconductor layer includes an active layer of pure amorphous silicon and an ohmic contact layer of impurity-doped amorphous silicon. A second metal layer is formed on the gate insulation layer to cover the semiconductor layer and then patterned using a third mask to form a data line having a source electrode, a pixel connecting line having a plurality of pixel electrodes, and a drain electrode that is spaced apart from the source electrode. A channel is formed by etching a portion of the ohmic contact layer between the source and drain electrodes. An alignment layer is formed over the substrate to cover the patterned second metal layer. The substrate having the alignment layer and the source and drain electrode is then thermal-treated in a furnace to cure the alignment layer and to anneal a thin film transistor. | ||||||
| 128 | Semiconductor light modulator | US10197559 | 2002-07-18 | US06798552B2 | 2004-09-28 | Hitoshi Tada |
| A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained. | ||||||
| 129 | Ion exchange waveguides and methods of fabrication | US09419347 | 1999-10-15 | US06786967B1 | 2004-09-07 | Lee J. Burrows |
| A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance. | ||||||
| 130 | Method of fabricating electro-optic polymer waveguide devices incorporating electro-optically active polymer clads | US10633955 | 2003-08-04 | US20040113296A1 | 2004-06-17 | Louis J. Bintz; Raluca Dinu; Danliang Jin |
| A method of fabricating a polymer waveguide, comprising (a) forming a first polymer film in proximity to a substrate, the first polymer film comprising a nonlinear optical chromophore; (b) poling and crosslinking the first polymer film to provide a crosslinked first electro-optic polymer film; (c) forming a second polymer film comprising a nonlinear optical chromophore in proximity to the first electro-optic polymer film; and (d) poling the second polymer film to provide a second electro-optic polymer film. | ||||||
| 131 | Optical waveguide device and manufacturing method therefor | US10699696 | 2003-11-04 | US20040096138A1 | 2004-05-20 | Akio Maeda; Takashi Shiotani |
| A manufacturing method for an optical waveguide device. The manufacturing method includes the steps of forming an optical waveguide in a substrate having an electro-optic effect, forming an SiO2 film on the substrate, forming Si films on the SiO2 film, the lower surface of the substrate, and at least a part of the side surface of the substrate to thereby make a conduction between the Si film formed on the SiO2 film and the Si film formed on the lower surface of the substrate. The manufacturing method further includes the steps of applying a photoresist to the Si film formed on the SiO2 film, patterning the photoresist so that a portion of the photoresist corresponding to the optical waveguide is left, forming a groove on the substrate along the optical waveguide by reactive ion etching, and removing the photoresist and the Si films. | ||||||
| 132 | Suppression of high frequency resonance in an electro-optical modulator | US10065833 | 2002-11-23 | US06646776B1 | 2003-11-11 | Steve Cheung; Karl Kissa; Gregory J. McBrien |
| The invention relates to apparatus and methods for suppressing high frequency resonance in an electro-optical device. The electro-optical device includes an optical waveguide formed in the upper surface of a substrate. The device further includes a plurality of electrically floating electrode segments that are positioned on the substrate to intensify an electric field in the optical waveguide. The device also includes a plurality of electrically grounded electrode segments that are positioned on the substrate for prohibiting modal conversion and propagation of high order modes in the plurality of electrically grounded electrode segments and in the plurality of electrically floating electrode segments, thereby suppressing modal coupling to the substrate. The device further includes a buffer layer formed on the upper surface of the substrate and a driving electrode formed on an upper surface of the buffer layer for receiving an RF signal that induces the electric field in the optical waveguide. | ||||||
| 133 | Optical devices | US10302052 | 2002-11-22 | US20030156474A1 | 2003-08-21 | Gary Gibson |
| The present invention relates to optical devices and, more particularly, to optical waveguide devices in which characteristics of a light signal are modulated or changed in accordance with an applied electric field. Conventionally, in such devices, such as, for example, a Mach-Zehnder modulator, DC drift problems, as are well known within the art, must be surmounted if the optical device is to meet minimum performance criteria. Suitably the present invention provides a layer of an oxide of silicon, preferably substantially, free of metallic impurities, where the ratio of oxygen to silicon is greater than 2 and is preferably greater than or equal to 2.2. | ||||||
| 134 | Semiconductor light modulator | US10197559 | 2002-07-18 | US20030156311A1 | 2003-08-21 | Hitoshi Tada |
| A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained. | ||||||
| 135 | Panel and flat-panel display device containing the same | US10347798 | 2003-01-22 | US20030142261A1 | 2003-07-31 | Hung-Jen Chu; Ming-Hsuan Chang; Chien-Kuo Ho |
| A panel for a flat panel display device is disclosed, which includes a substrate having signal wires and terminals respectively connected to the signal wires, each terminal having first, second and third conducting layer, an insulating layer, a protection layer, contact holes connected between the first conducting layer and the third conducting layer, and contact holes connected between the second conducting layer and the third conducting layer, the insulating layer being sandwiched in between the second conducting layer and the substrate, the first conducting layer being sandwiched in between the protection layer and the insulating layer, the protection layer being sandwiched in between the first conducting layer and the third conducting layer or the second conducting layer and the third conducting layer, the first conducting layer being isolated from the second conducting layer. | ||||||
| 136 | Light modulator of waveguide type | US09529223 | 2000-04-10 | US06522792B1 | 2003-02-18 | Tohru Sugamata; Yasuyuki Miyama; Yoshihiro Hashimoto |
| An optical waveguide modulator 40 has a substrate 1 made of a material with an electrooptic effect, an optical waveguide 2 to guide a lightwave 2, a travelling wave-type signal electrode 3 and the ground electrodes 4 to control the lightwave. Moreover, it has a buffer layer 6, at least a part thereof being embedded in the superficial layer of the substrate 1, having a larger width “W” than a width “&ohgr;” of the travelling wave-type signal electrode 3 only under the signal electrode 3 and its nearby part. | ||||||
| 137 | Mach-Zehnder optical modulator | US10131706 | 2002-04-24 | US20020159128A1 | 2002-10-31 | Malcolm Green |
| The present invention relates to a Mach-Zehnder optical modulator having an electrode structure that is arranged to compensate for temperature induced performance degrading variations. The distances between appropriate faces of the signal electrode and a ground electrode and corresponding wave-guide arms are arranged such that there is a more balanced thermal expansion of the waveguide arms due to heating of the waveguides by the RF signals carried on the signal and ground electrodes. Tailored buffer layers further balances the heating in the waveguide arms through the RF losses in the electrodes. The balanced heating reduces the temperature gradient between the waveguide arms of the optical modulator and hence reduces the adverse thermally induced performance degrading variations. | ||||||
| 138 | Electro-optical waveguide element with reduced DC drift phenomena | US701055 | 1996-08-21 | US5878175A | 1999-03-02 | Shinichiro Sonoda; Masami Hatori |
| An electro-optical waveguide element with reduced DC drift phenomena is presented. The waveguide element is made up of an optical waveguide formed on a substrate possessing electro-optical effects, at least a pair of electrodes closely attached to the optical waveguide with a buffer layer sandwiched between the substrate and the electrodes, and a driver circuit for applying a voltage between the electrodes. The buffer layer is made of a material having a dielectric constant in the range of 20-1000. The buffer layer is more preferably made of a material having a dielectric constant in the range of 20-200. The material of the buffer layer is selected from the group consisting of HfO.sub.2, TiO.sub.2, SrTiO.sub.3, BaTiO.sub.3, LiNbO.sub.3, LiTaO.sub.3, Pb(Zr, Ti)O.sub.3, and (Pb, La)(Zr, Ti)O.sub.3. | ||||||
| 139 | Optical control device and method for making the same | US535477 | 1995-09-27 | US5687265A | 1997-11-11 | Hiroshi Nishimoto; Toshiyuki Kambe |
| Disclosed is an optical control device which has a LiNbO3 or LiTaO3 crystalline substrate having electrooptic effect; a channel-type optical waveguide which is formed in the crystalline substrate by doping metal; an optically transparent film layer formed on the crystalline substrate; and electrodes formed on the optically transparent film layer; wherein the crystalline substrate has a surface except a region which waveguided-light through the channel-type optical waveguide propagates or an entire surface under which a layer doped by metal is formed. | ||||||
| 140 | Alkali metal ion migration control | US292068 | 1994-08-17 | US5578103A | 1996-11-26 | Roger J. Araujo; Norbert J. Binkowski; Francis P. Fehlner |
| A materials system comprising a glass containing alkali metal ions capable of migrating and a silica, alumina, or tantala film deposited on the glass surface, the glass also containing high field strength ions that can change coordination. The direction of alkali metal ion flow depends on the film selected and the glass composition. | ||||||
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