| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 141 | Dielectric optical waveguide device | US190478 | 1994-02-02 | US5473711A | 1995-12-05 | Hironao Hakogi; Takashi Yamane |
| An insulating buffer layer of SiO.sub.2 is formed on a substrate of LiNbO.sub.3 crystal in which optical waveguides are formed, and a semiconducting film of Si is formed on the buffer layer. An insulating diffusion suppressing layer of SiO.sub.2 is formed on the semiconducting film, and a pair of electrodes of Au are located on the diffusion suppressing layer. The formation of silicide by solid-phase diffusion of the electrodes into the semiconducting film can be prevented by the diffusion suppressing layer. | ||||||
| 142 | High-speed external modulator | US965191 | 1992-10-23 | US5339369A | 1994-08-16 | Samuel Hopfer; Yosef Shani |
| An improved high-speed external optical modulator, modulated by RF waves, which velocity matches the RF waves with the optical waves is disclosed. The apparatus includes a lithium niobate substrate on which is formed an optical waveguide, electrically floating electrodes, a low dielectric buffer layer and electrodes carrying the modulating RF energy. | ||||||
| 143 | Optical waveguide device | US876022 | 1992-04-30 | US5185831A | 1993-02-09 | Hisao Kawashima |
| A TE polarization absorption film is provided on an optical waveguide between an ouput end of the optical waveguide and a directional coupler composed of the optical waveguide and another optical waveguide. In accordance with the presence of the TE polarization absorption film, a difference of output light power between polarization components becomes minimized. | ||||||
| 144 | Device employing a substrate of a material that exhibits the pyroelectric effect | US460759 | 1990-01-04 | US5153930A | 1992-10-06 | Richard E. DuPuy; Harold R. Gilles; Edwin Boyd Osgood |
| An article is manufactured from a substrate of a material that exhibits the pyroelectric effect by depositing a film containing a selected material in a first state over a front surface of the substrate. At least one electrode is formed on the film, portions of the film being exposed around the electrode. The exposed portions of the film are subjected to a treatment such that they are converted from the first state to a second state, in which the material has a resistivity that lies within a desired range of values. | ||||||
| 145 | DISPLAY CELL, DISPLAY APPARATUS AND METHOD FOR MAKING SAME | PCT/CN2011070177 | 2011-01-11 | WO2011085675A8 | 2011-09-29 | CHEN JAU-SHIU; LIANG RONG-CHANG; TSAI MING-WEI |
| An electrophoretic display device comprises a plurality of pixels, each pixel has a cell area containing a plurality of charged pigment particles (43) dispersed between two opposite electrodes (411, 421), and a semiconducting passivation layer (45) is provided on one or both of the two opposite electrodes (411, 421). The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti, or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type donor or a p-type acceptor, the n-type donor is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca. | ||||||
| 146 | SEMICONDUCTOR-BASED BROADBAND MODULTORS | PCT/US2009046727 | 2009-06-09 | WO2010036420A2 | 2010-04-01 | KOLODZIEJSKI LESLIE A; PETRICH GALE S; SHAMIR ORIT |
| An optical modulator is provided. The optical modulator includes a ridge- shaped active region comprising a plurality of alternating high and low index layers. The ridge-shaped active region is used to confine a selective optical mode for optical modulation. A plurality of oxidized layers positioned so as to confine the selective optical mode in the middle region of the ridge-shaped active region. The oxidized layers enable the optical modulator to withstand high operating voltages both in reverse and forward bias without concern of breakdown or carrier loss. | ||||||
| 147 | 디스플레이 장치 | KR1020140117030 | 2014-09-03 | KR101797729B1 | 2017-11-16 | 김태은 |
| 본발명의일 실시예는가시광선을구현하도록표시소자를구비하는디스플레이패널, 상기디스플레이패널의면 중가시광선이구현되는면을향하도록배치되는광기능층, 상기디스플레이패널의가장자리의적어도일 영역과중첩되도록상기디스플레이패널상에배치되는회로부재및 상기디스플레이패널의면 중상기광기능층을향하는면에상기회로부재와중첩되지않고상기디스플레이패널과접하도록형성되는보강부재를포함하는디스플레이장치를개시한다. | ||||||
| 148 | 디스플레이 장치 | KR1020140117030 | 2014-09-03 | KR1020160028583A | 2016-03-14 | 김태은 |
| 본발명의일 실시예는가시광선을구현하도록표시소자를구비하는디스플레이패널, 상기디스플레이패널의면 중가시광선이구현되는면을향하도록배치되는광기능층, 상기디스플레이패널의가장자리의적어도일 영역과중첩되도록상기디스플레이패널상에배치되는회로부재및 상기디스플레이패널의면 중상기광기능층을향하는면에상기회로부재와중첩되지않고상기디스플레이패널과접하도록형성되는보강부재를포함하는디스플레이장치를개시한다. | ||||||
| 149 | 컬러 혼합 방지 구조체를 구비한 디스플레이 | KR1020157035543 | 2013-06-17 | KR1020160007658A | 2016-01-20 | 양,영,철; 첸,쳉; 이,종원; 김,성기; 방,정호; 이,진복; 이,성주 |
| 컬러필터층을구비한디스플레이가제공될수 있다. 디스플레이는박막트랜지스터층, 및컬러필터층과박막트랜지스터층 사이에개재된액정재료의층을가질수 있다. 컬러필터층은투명기판상에컬러필터요소들의어레이를포함할수 있다. 컬러필터요소들은착색된포토레지스트로형성될수 있다. 무기층은컬러필터요소들상에퇴적될수 있다. 흑색포토레지스트로형성된블랙매트릭스와같은불투명매트릭스는무기층 상에형성될수 있다. 컬러포토레지스트컬러필터요소들은직사각형일수 있고직사각형어레이내에투명기판상에배열될수 있다. 블랙매트릭스는직사각형개구들의어레이를포함할수 있다. 블랙매트릭스의개구들각각은컬러필터요소들중 대응하는컬러필터요소와정렬될수 있다. | ||||||
| 150 | 광학 소자 | KR1020077022528 | 2006-03-02 | KR101217998B1 | 2013-01-02 | 세끼네,게이꼬 |
| 본발명은, 광학이방체를위한배향막을갖는광학소자에있어서, 배향막에대한손상의발생이효과적으로방지된광학소자를제공하는것을주목적으로한다. 본발명은, 광학이방체를위한배향막을갖는광학소자에서, 상기배향막의바탕층으로서응력완화층이형성되어이루어지는것을특징으로하는광학소자를제공함으로써, 상기과제를해결한다. | ||||||
| 151 | 광학 소자 | KR1020077022528 | 2006-03-02 | KR1020070122469A | 2007-12-31 | 세끼네,게이꼬 |
| In an optical element having an oriented film for an optical anisotropic body, generation of scratches on the oriented film is effectively prevented. The optical element having the oriented film for the optical anisotropic body is characterized in that a stress relaxing layer is formed as a base layer of the oriented film. | ||||||
| 152 | 액정표시장치용 어레이기판과 그 제조방법 | KR1020060044525 | 2006-05-18 | KR1020070111580A | 2007-11-22 | 송무형; 홍성진 |
| An array substrate for an LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to prevent breaking of a data line using first and second topology difference buffering units, thereby lowering an error rate of an LC panel. A gate line(202) and a data line(220) are crossed on a substrate to define a pixel area. A switching device is configured at an intersection between the gate line and the data line. A pixel electrode(226) is configured in the pixel area. First and second topology difference buffering units(206,208) are configured in both sides of the gate line at a position crossing with the data line, and buffer a topology difference by the side of the gate line. | ||||||
| 153 | 액정표시장치 | KR1020030099670 | 2003-12-30 | KR1020040005807A | 2004-01-16 | 코쿠라마사후미; 카타오카요시하루; 시마다타카유키 |
| PURPOSE: An LCD(Liquid Crystal Display) is provided to improve an adhesion force with an insulating film of a metal film formed on the insulating film. CONSTITUTION: A TFT(Thin Film Transistor)(43) is formed on an insulating substrate(42). A film of a photosensitive resin(44) which covers the TFT is formed. Two times of exposure are performed by the first and second photomasks in which circular light shielding parts are distributed. A contact hole(66) is formed in a smooth recess and protrusion formed in the area other than the photosensitive resin and the TFT. Furthermore, an MoN film(45) and a reflective electrode(46) are sequentially laminated on the photosensitive resin. The high adhesion strength of the MoN film to the photosensitive resin is obtained by setting N2 content in the MoN film from 5 atomic % to 30 atomic %, and the degradation of an etching rate is suppressed. | ||||||
| 154 | 광 변조장치(OPTICAL MODULATOR) | KR1019950700893 | 1994-07-07 | KR100271188B1 | 2000-11-01 | 도카노유이찌; 무라마쯔료지; 다나베다까노부; 다께다쯔기오 |
| 기판(4)과, 상기 기판에 형성되어 광이 입사되는 입사광도파로(5)와, 기판(4)에 입사광도파로(5)로 부터 분기하여 형성되고 전계의 강도에 따라 투과광의 위상이 변화하는 2개의 위상시프트광도파로(6)와, 기판(4)에 위상시프트광도파로(6)와 합류하도록 형성되어 있는 출사광도파로(7)를 구비한다. 위상시프트광(6)의 적어도 한쪽은, 분극 반전된 분극반전부분(8)을 가진다. 위상시프트광도파로(6)의 상부 또는 그 근방의 일부에 형성되어 있는 완충층(14)을 구비해도 좋다. 완충층(14)을 설치하지 않은 부분의 일부 또는 전부에 형성되어 위상시프트광도파로(6)에 응력을 작용시키는 투명물질막을 구비해도 좋다. 위상시프트광도파로(6)의 한쪽일부에 응력을 부여하는 응력부요부재를 구비해도 좋다. 위상시프트광도파로(6)의 한쪽의 일부 또는 전부에 광을 조사하는 광조사장치(26)를 구비해도 좋다. | ||||||
| 155 | 光変調器 | JP2014227075 | 2014-11-07 | JP2015118371A | 2015-06-25 | 岩塚 信治; 佐々木 権治; 谷口 真理 |
| 【課題】単結晶基板上にエピタキシャル成長により形成されたニオブ酸リチウム膜を用い、進行波電極の特性インピーダンスZcを所定の値に維持した状態で、低VπLの光変調器を提供することを目的とする。 【解決手段】単結晶基板と、単結晶基板の主面上に形成されたエピタキシャル膜であり、リッジ形状部を有するニオブ酸リチウム膜と、リッジ形状部上に形成されたバッファ層と、バッファ層上に形成された第1電極と、第1電極とは離間して配置された第2電極とを少なくとも有し、第2電極は、ニオブ酸リチウム膜と接していることを特徴とする光変調器を提供する。 【選択図】図2 |
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| 156 | Electro-optic modulator having metal contact base of the bias electrode - doped semiconductor for reducing the Dc bias fluctuation | JP2011523850 | 2009-07-28 | JP5502867B2 | 2014-05-28 | ケイヴァン セイヤ，; ロバート， アール． ヘイズ， |
| 157 | Optical waveguide element | JP2012080444 | 2012-03-30 | JP2013210484A | 2013-10-10 | TAKEMURA MOTOHIRO; KURIHARA MASANAO; FUJINO TETSUYA |
| PROBLEM TO BE SOLVED: To provide an optical waveguide element in which electric charges accumulated in a substrate are effectively diffused to suppress DC drift and temperature drift.SOLUTION: The optical waveguide element includes: a substrate having electro-optic effects; an optical waveguide formed on the substrate; a buffer layer (BF layer) formed on the substrate; and a modulation electrode (a signal electrode and a ground electrode) which is formed on the buffer layer and modulates a light wave propagated in the optical waveguide. A charge diffusion layer for diffusing electric charges generated in the substrate is formed between the substrate and the buffer layer, and the charge diffusion layer is electrically connected to the ground electrode constituting the modulation electrode. | ||||||
| 158 | Optical waveguide device | JP2011102391 | 2011-04-28 | JP2012234037A | 2012-11-29 | ICHIOKA MASAYUKI; SAKUMA MITSURU; ICHIKAWA JUNICHIRO |
| PROBLEM TO BE SOLVED: To provide an optical waveguide device capable of reducing stress occurring inside an optical waveguide substrate due to a difference in thermal expansion coefficient.SOLUTION: An optical waveguide device 10 includes an optical waveguide substrate 11 having a thickness of 30 μm or less, and a liquid crystal polymer substrate 12 holding the optical waveguide substrate 11 and having a dielectric constant lower than that of the optical waveguide substrate 11, in which the optical waveguide substrate 11 and the liquid crystal polymer substrate 12 are adhered by an adhesive layer 14. The thermal expansion efficient of each of the optical waveguide substrate 11 and the liquid crystal polymer substrate 12 has anisotropy within a substrate plane. The relative orientations of the optical waveguide substrate 11 and the liquid crystal polymer substrate 12 are adjusted to align the axial direction of the anisotropy of the optical waveguide substrate 11 to the axial direction of the anisotropy of the liquid crystal polymer substrate 12. | ||||||
| 159 | Semiconductor optical modulator | JP2010200143 | 2010-09-07 | JP4933653B2 | 2012-05-16 | 英一 山田; 順裕 菊池; 健 都築 |
| 160 | Optical element | JP2007506008 | 2006-03-02 | JP4930370B2 | 2012-05-16 | 啓子 関根 |
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