| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 同心流反应器 | CN201380039432.7 | 2013-05-24 | CN104508190B | 2017-12-15 | G.阿科特; M.马格努斯森; O.波斯特; K.德佩特; L.萨姆伊森; J.欧森 |
| 一种气相纳米线生长装置，其包括反应室(200)、第一输入端和第二输入端(202B,202A)。第一输入端同心位于第二输入端内，并且第一输入端和第二输入端经布置，使得从第二输入端输送的第二流体在从第一输入端输送的第一流体和反应室壁之间提供包覆。可用催化剂颗粒气溶胶生长纳米线。 | ||||||
| 2 | 一种可用于平面显示的场致发射纳米材料 | CN03116285.1 | 2003-04-10 | CN1450580A | 2003-10-22 | 陈国荣; 莫晓亮 |
| 本发明涉及一种可用于平面显示的场致发射纳米材料，具体为Ag和TCNQ按1∶1化学计量比生成的Ag(TCNQ)纳米线。该材料可采用真空条件下的饱和蒸气反应法制备获得，生成的Ag(TCNQ)纳米线(晶須)基本上垂直于基板。为了降低场发射阈值，可在晶須上用常规真空镀膜法，再覆盖一层纳米厚度的金属或氟化锂薄层。 | ||||||
| 3 | 一种具有六棱柱状氮化铝晶须的制备方法 | CN201611237098.8 | 2016-12-28 | CN106801258A | 2017-06-06 | 刘学超; 王华杰; 孔海宽; 忻隽; 高攀; 施尔畏 |
| 本发明涉及一种具有六棱柱状氮化铝晶须的制备方法，所述具有六棱柱状氮化铝晶须的制备方法，采用物理气相传输法，通过中频感应加热方式将原料AlN加热成气相，通过控制生长温度为1700‑1750℃，控制生长压力为200‑300 Torr，结晶形成六棱柱状的AlN晶须。本发明在较低的温度下，通过控制生长速率获得六棱柱AlN晶须。 | ||||||
| 4 | 通过离子束注入形成的纳米棒阵列 | CN200680027866.5 | 2006-06-29 | CN101233268A | 2008-07-30 | 朱唯干; 徐慧源; 陈永松; 杜立伟; 萧庆廉; 王雪梅; 杜彦洁 |
| 描述了一种使用离子束注入制备纳米棒阵列的方法，该方法包括在衬底上限定图案和然后使用离子束注入向衬底中注入离子。接下来，在衬底上沉积薄膜。在薄膜生长期间，纳米沟槽形成并通过毛细凝结催化纳米棒的形成。所得纳米棒相对于支持基体排列并且没有晶格和热应变作用。通过改变离子束注入和薄膜生长条件可以改变纳米棒的密度、尺寸和纵横比，导致对发射效率的控制。 | ||||||
| 5 | 一种可用于平面显示的场致发射纳米材料 | CN03116285.1 | 2003-04-10 | CN1263063C | 2006-07-05 | 陈国荣; 莫晓亮 |
| 本发明涉及一种可用于平面显示的场致发射纳米材料，具体为Ag和TCNQ按1∶1化学计量比生成的Ag(TCNQ)纳米线。该材料可采用真空条件下的饱和蒸气反应法制备获得，生成的Ag(TCNQ)纳米线(晶须)基本上垂直于基板。为了降低场发射阈值，可在晶须上用常规真空镀膜法，再覆盖一层纳米厚度的金属或氟化锂薄层。 | ||||||
| 6 | 一种CdS或CdSe单晶纳米线阵列的制备方法 | CN201610450846.4 | 2016-06-21 | CN105926034A | 2016-09-07 | 孟祥敏; 黄兴 |
| 本发明公开了一种CdS或CdSe单晶纳米线阵列的制备方法，包括如下步骤：将CdS或CdSe固体放入衬底上，然后将所述衬底置于管式炉的高温加热区；对放入衬底的管式炉抽真空并通入保护气体，然后将所述管式炉升温，并将所述管式炉内压强保持在10‑2000Pa，进行反应0.1‑2h，反应结束后使所述管式炉自然降温至室温。该制备方法造价低廉、可控性强、步骤简单；本发明制备的CdS单晶纳米线阵列和CdSe单晶纳米线阵列排列整齐、晶体取向一致、结晶度高、缺陷低，表现出优异的光电性质。在纳米光电子器件、太阳能电池、光催化和生物传感等方面具有非常重要的研究价值和应用前景。 | ||||||
| 7 | 同心流反应器 | CN201380039432.7 | 2013-05-24 | CN104508190A | 2015-04-08 | G.阿科特; M.马格努斯森; O.波斯特; K.德佩特; L.萨姆伊森; J.欧森 |
| 一种气相纳米线生长装置，其包括反应室(200)、第一输入端和第二输入端(202B,202A)。第一输入端同心位于第二输入端内，并且第一输入端和第二输入端经布置，使得从第二输入端输送的第二流体在从第一输入端输送的第一流体和反应室壁之间提供包覆。可用催化剂颗粒气溶胶生长纳米线。 | ||||||
| 8 | 氮化铝单晶制造方法 | CN201080054275.3 | 2010-11-29 | CN102639764A | 2012-08-15 | 福山博之; 东正信; 高田和哉; 服部刚 |
| 本发明提供一种能够更有效、简便地制造结晶性良好的氮化铝单晶的方法。本发明的氮化铝单晶的制造方法，在发生铝气体或氧化铝气体的原料气体发生源与碳成型体存在的条件下使氮气流通，在加热环境中使氮化铝单晶生长，其特征在于，碳成型体的至少一部分不与原料气体发生源直接接触，原料气体的至少一部分不与碳成型体直接接触；在不与该碳成型体接触的原料气体发生源和不与原料气体发生源接触的碳成型体之间存在有0.01～50mm的间隔的空间，以这样的配置对原料气体发生源和碳成型体进行配置；在不与该碳成型体接触的原料气体发生源和不与原料气体发生源接触的碳成型体之间的空间内，设定加热温度和氮气流量以满足析出氮化铝的条件。 | ||||||
| 9 | CONCENTRIC FLOW REACTOR | EP13726897.5 | 2013-05-24 | EP2855742B1 | 2016-12-14 | ALCOTT, Greg; MAGNUSSON, Martin; POSTEL, Olivier; DEPPERT, Knut; SAMUELSON, Lars; OHLSSON, Jonas |
| 10 | INDIUM OXIDE NANOROD AND MANUFACTURING METHOD THEREOF | EP15184576.5 | 2015-09-10 | EP2995705A3 | 2016-03-23 | Hsu, Kuo-Ming |
Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.
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| 11 | CONCENTRIC FLOWER REACTOR | US15410078 | 2017-01-19 | US20170198409A1 | 2017-07-13 | Greg Alcott; Martin Magnusson; Olivier Postel; Knut Deppert; Lars Samuelson; Jonas Ohlsson |
| A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires | ||||||
| 12 | Concentric flower reactor | US14403427 | 2013-05-24 | US09574286B2 | 2017-02-21 | Greg Alcott; Martin Magnusson; Olivier Postel; Knut Deppert; Lars Samuelson; Jonas Ohlsson |
| A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires. | ||||||
| 13 | CONCENTRIC FLOW REACTOR | US14403427 | 2013-05-24 | US20150152570A1 | 2015-06-04 | Greg Alcott; Martin Magnusson; Olivier Postel; Knut Deppert; Lars Samuelson; Jonas Ohlsson |
| A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires | ||||||
| 14 | OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE SILVER NANOWIRE, METHOD OF MANUFACTURING THE SAME AND OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE METAL NANOWIRE | US13625384 | 2012-09-24 | US20130128366A1 | 2013-05-23 | Bongsoo KIM; TaeJoon Kang; Ilsun Yoon |
| An optical nanoantenna includes a single-crystalline silver (Ag) nanowire. The single-crystalline silver nanowire is configured to output an optical antenna radiation pattern based on incident lights. The optical antenna radiation pattern includes multilobe radiation patterns, and each multilobe radiation pattern has a plurality of lobes that are radially disposed centered on the single-crystalline silver nanowire. The incident lights are visible lights in entire visible wavelength bands. Accordingly, the optical nanoantenna according to example embodiments operates at multiple resonances in the full visible range. | ||||||
| 15 | PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL | US13512627 | 2010-11-29 | US20120240845A1 | 2012-09-27 | Hiroyuki Fukuyama; Masanobu Azuma; Kazuya Takada; Takeshi Hattori |
| Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source. | ||||||
| 16 | Method of non-catalytic formation and growth of nanowires | US11619413 | 2007-01-03 | US07781317B2 | 2010-08-24 | Joshua Goldberger; Melissa Fardy; Oded Rabin; Allon Hochbaum; Minjuan Zhang; Peidong Yang |
| A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the reaction chamber through the inlet end and exit the chamber through the exit end. Upon passing through the chamber the carrier gas comes into contact with a precursor which is heated within the reaction chamber. A collection substrate placed downstream from the precursor allows for the formation and growth of nanowires thereon without the use of a catalyst. A second embodiment of the present invention is comprised of a reaction chamber, a carrier gas, a precursor target, a laser beam and a collection substrate. The carrier gas with a flow rate and a gas pressure is allowed to enter the reaction chamber through an inlet end and exit the reaction chamber through the exit end. The laser beam is focused on the precursor target which affords for the evaporation of the precursor material and subsequent formation and growth of nanowires on the collection substrate. | ||||||
| 17 | Structures having aligned nanorods and methods of making | US11256395 | 2005-10-21 | US07658991B2 | 2010-02-09 | Yiping Zhao; Jianguo Fan |
| Substrates having nanostructures disposed thereon and methods of forming nanostructures on the substrates are disclosed. In particular, embodiments of the present invention provide for structures having a substrate having a non-planar surface. In an embodiment, a portion of the non-planar surface has at least one layer of nanostructures disposed thereon. | ||||||
| 18 | Structures having aligned nanorods and methods of making | US11256395 | 2005-10-21 | US20070166539A1 | 2007-07-19 | Yiping Zhao; Jianguo Fan |
| Substrates having nanostructures disposed thereon and methods of forming nanostructures on the substrates are disclosed. | ||||||
| 19 | Synthesis of fibers of inorganic materials using low-melting metals | US11521084 | 2006-09-14 | US20070095276A1 | 2007-05-03 | Mahendra Sunkara; Shashank Sharma; Hari Chandrasekaran; Hongwei Li; Sreeram Vaddiraju |
| A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom. | ||||||
| 20 | Pb.sub.1-W Cd.sub.W S Epitaxial thin film | US143562 | 1980-04-25 | US4282045A | 1981-08-04 | James D. Jensen; Richard B. Schoolar |
| A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers. | ||||||
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