专利汇可以提供Green color light emitting diode and manufacture thereof专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a green LED adapted for a display by epitaxially forming N type and P type GaP films on one surface of an N type GaP substrate, and forming irregular surface on the other surface of the substrate. CONSTITUTION:A GaP substrate is generally sliced in (111) direction, thereby providing A surface (Ga surface) and B surface (P surface). The A surface is chemically stable, and hardly etched, and when an epitaxial layer is superposed thereon, it has a property of being hardly doped with an impurity in the epitaxial layer. According to this structure, N type and P type epitaxial layers 2, 3 are superposed paritcularly on the A surface, and when the A surface is etched with aqua regia, etching pit and hexagonal irregularity due to defect of the crystal can be formed. Accordingly, in the GaP green LED, the light emitted in the interior is reflected at random, the light is emitted externally from the side of the element, and the light absorption as a while is reduced, thereby obtaining high light emitting output.,下面是Green color light emitting diode and manufacture thereof专利的具体信息内容。
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