Apparatus for the epitaxial growth of semiconducting material by liquid phase epitaxy from at least two source solutions
阅读：191发布：2021-11-14
专利汇可以提供Apparatus for the epitaxial growth of semiconducting material by liquid phase epitaxy from at least two source solutions专利检索，专利查询，专利分析的服务。并且An apparatus is disclosed for the epitaxial growth of semiconducting material by liquid phase epitaxy from at least two source solutions. A reaction chamber is designed of separable parts and can be suitably opened. Included within the reaction chamber are substrate wafers and the source solutions. The reaction chamber can be established within a furnace having temperature control means. It is capable of rotation about its axis which is a hollow tube. There are provided within the reaction chamber separating walls and baffles which form channels such that the substrate wafers are brought into contact by gravity with one of the source solutions at a time or are removed therefrom dependent on the rotation angle and on the number of completed revolutions of the reaction chamber.，下面是Apparatus for the epitaxial growth of semiconducting material by liquid phase epitaxy from at least two source solutions专利的具体信息内容。
1. Apparatus for treating a workpiece comprising a closed rotatable chamber which is adapted to include at least one said workpiece fixed relative to said chamber and to include at least two different source liquids contained in and movable in said chamber during rotation of said chamber about an axis, said chamber having: a plurality of channels formed by a plurality of walls to hold temporarily each said source liquid away from said workpiece and to distribute successively said source liquids onto said workpiece during said rotation about said axis.
2. Apparatus according to claim 1 wherein said chamber is cylindrical, a treating region of said chamber formed by said walls contains said workpiece, and a channel formed by said walls holds one of said liquids while the other said liquids is in contact with said workpiece.
3. Apparatus according to claim 2 wherein the said chamber wall at said treating region is configured to define a ridge extending into said chamber to enhance wetting of said workpiece during said rotation of said chamber.
4. Apparatus according to claim 2 wherein an open channel formed by said walls passes through said treating region and distributes each said liquid to said reaction region after one complete revolution of said chamber.
5. Apparatus according to claim 4 wherein said open channel is formed in a funnel shape by two walls, which shape distributes said liquids via an orifice thereof.
6. Apparatus according to claim 2 wherein a closed channel extends between a first orifice in a wall of said treating region and a second orifice in said wall, said closed channel holding one said liquid during the time thE other said solution is in said treating region.
7. Apparatus according to claim 2 wherein said walls form two treating regions containing at least one workpiece each, and said walls form a region for holding one said liquid while the other said solution is partially present in each of said two treating regions.
8. Apparatus for the growth of semiconducting material by liquid phase epitaxy having a closed reaction chamber which is adapted to include at least one substrate fixed relative to said chamber on which said semiconducting material is to be grown from at least two different source solutions contained in and movable in said chamber during rotation of said chamber about an axis and which is adapted to be established in a furnace with temperature control means, said reaction chamber comprising: a plurality of channels formed by a plurality of walls to hold periodically each said source solution away from said substrates and to distribute said source solutions successively onto said substrates according to the angle of rotation and number of completed revolutions of said reaction chamber about said axis.
9. Apparatus as set forth in claim 1 wherein: said workpiece is a substrate, said chamber is a rotatable reaction chamber for use in growth of a layered structure on said substrate by liquid phase epitaxy, said channels comprise a plurality of interconnecting channels disposed to contain said plurality of different liquids, and said axis is an axis of rotation of said chamber such that when said chamber is rotated said different liquids are distributed successively into one said channel separately and temporarily related to the angular rotation of said chamber about said axis.
10. Apparatus as set forth in claim 1 wherein: said chamber is for use in growth of a layered structure by liquid phase epitaxy, and said channels comprise a plurality of interconnecting channels adapted to hold respectively a plurality of volumes of said different liquids which through movement of said chamber are distributed successively and separately into and out of a given channel of said plurality of interconnecting channels.
11. Apparatus as set forth in claim 1 for exchanging the volumes of said two different liquids between two respective locations for treating at least one said workpiece in one of said locations intermittently and alternately with said different liquids, wherein: said chamber is a container having at least two compartments adapted to hold separately said liquids, said plurality of walls in said container form said compartments for holding said liquids intermittently, and a plurality of baffles in said container are connected to said plurality of walls to form at least two said channels interconnecting said compartments so that during rotation of said container about said axis mass movement of said liquids via said channels effects exchange thereof between said compartments alternately in relationship to the angular rotation of said container.
12. Apparatus as set forth in claim 11 wherein said container is a cylinder and said rotation axis is the axis of revolution of said cylinder.
13. Apparatus as set forth in claim 1 for treating said workpiece with a plurality of said different liquids intermittently and alternately wherein: said chamber is a container for said liquids, two of said channels comprise at least two compartments in said container capable of holding separately said liquids, and there is at least one said channel interconnecting said compartments for exchanging said liquids between said compartments by mass movement due to rotation of said container about said axis.
14. Apparatus as set forth in claim 12 wherein said container is a cylinder and said axis is the axis of revolution of said cylinder.
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