专利汇可以提供Liquid phase epitaxial growing system专利检索,专利查询,专利分析的服务。并且PURPOSE: To obtain a high quality epitaxial layer, by providing a slitlike openings not only at the bottom part of a semicylindrical melt holder but also on the side surface of the holder.
CONSTITUTION: A melt holder 14 has a bottom opening part 15 and in addition a sllitlike opening part 17 at the side surface between the bottom and a substrate 13. Ths substrate 13 and growing melt 16 are provided. The inside of a quartz tube 11 is evacuated. A supporting rod 18 is attached. The device is welded and sealed. When the device is heated with a core pipe, the melt flows out of the opening parts 15 and 17. Hg and the like having large specific gravities flow out of the bottom opening 15. Cd, Te and the like having small specific gravities in the melt flow out of the side opening part 17. When the device is rotated by 180 degrees in the direction B, the melt 16A, which includes a small amount of Hg, flows out of the side opening part 17. The melt having the uniform composition is attached on the surface of the substrate in the state that the constituent elements are not segregated due to the difference in specific gravities, and an epitaxial layer having the uniform composition is obtained. The unnecessary material on the surface of the melt is attached to the surface of the holder, and only the clean melt flows out. Thus a high quality crystal is obtained.
COPYRIGHT: (C)1988,JPO&Japio,下面是Liquid phase epitaxial growing system专利的具体信息内容。
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