Liquid phase epitaxial growth method for silicon carbide single crystal
专利汇可以提供Liquid phase epitaxial growth method for silicon carbide single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE: To enhance the baking density and to obtain a high-carrier-density SiC single crystal by covering the impurity in a recess provided at the bottom of a crucible with platy silicon.
CONSTITUTION: The impurities 9 such as Al and Si
3 N
4 are arranged in the recess 8 provided at the bottom of the crucible 1 and covered with platy silicon 10 consisting of a single-crystal or polycrystal silicon wafer, the pieces of the raw silicon 11 are packed in the crucible 1, the device is evacuated to 1×10
-6 -1μ10
-7 Torr, the crucible 1 is heated from the m.p. of the impurities to the m.p. of Si (660-1412°C), and consequently the impurities 9 are melted and baked. An inert gas is then introduced into the device to return the pressure in the crucible 1 to atmospheric pressure, the crucible 1 is heated to the growth temp. of SiC, the platy silicon 10 and raw silicon 11 are melted, and the molten impurities 9 are infiltrated into the molten silicon. An SiC single crystal substrate 7 is dipped in the molten silicon to grow an SiC single crystal.
COPYRIGHT: (C)1991,JPO&Japio，下面是Liquid phase epitaxial growth method for silicon carbide single crystal专利的具体信息内容。
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