Semiconductor device and manufacture thereof
专利汇可以提供Semiconductor device and manufacture thereof专利检索，专利查询，专利分析的服务。并且PURPOSE:To simplify manufacture of the semiconductor device provided with a Schottky barrier by a method wherein a guard ring secion is provided at a Schottky barrier section by performing self-alignment, and a highly integrated Schottky barrier diode is formed. CONSTITUTION:A thermal oxide film 12 is fromed on an N type silicon substrate 11 by performing thermal oxidation and an aperture 13 is provided at the expected part whereon the Schottky barrier will be formed by performing a selective etching on the film 12. Then, p type impurity boron-added polycrystalline silicon layer 14 of prescribed thickness is deposited on the film 12 including the aperture 13, a reactive ion etching is then performed on the layer 14 from the surface to the lower part, and an annular residual polycrystalline silicon layer 14' is remained at the inner circumferential part of the aperture 13. Then, boron is diffused from the layer 14' to the substrate 11 by performing heat treatment, and an annular P type guard reing layer 15 is formed on the aperture 13 by performing self-alignment. Then, after a silicide layer 16 has been formed on the surface of the layer 14' which was exposed by the heat treatment, an Al wiring 17 is formed by performing a patterning.，下面是Semiconductor device and manufacture thereof专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种电荷捕获型非易失存储器及其制作方法 | 2020-05-08 | 488 |
| MIP电容的制造方法 | 2020-05-11 | 349 |
| 一种半导体器件及其制备方法、电子装置 | 2020-05-12 | 68 |
| 一种形成自对准接触部的方法 | 2020-05-12 | 181 |
| 半导体器件的集成制造方法 | 2020-05-12 | 350 |
| 影像传感器 | 2020-05-12 | 744 |
| 一种半导体器件及其制作方法 | 2020-05-12 | 524 |
| 具有金属填充的深源极触点的功率MOSFET | 2020-05-11 | 248 |
| 半导体结构 | 2020-05-11 | 787 |
| LDMOSFET器件及其制造方法 | 2020-05-11 | 182 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
