Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To enable to perform a contact self-alignment for both P and N channels by a method wherein a metal is formed on an N type polycrystalline Si, and subsequently, they are brought into a metal silicide state by reacting the metal and the N type polycrystalline Si. CONSTITUTION:A P well 102 is formed in an N type substrate 101, and after a gate oxidation has been performed, a polycrystalline Si is deposited, and an N diffusion is performed on the polycrystalline Si. Subsequently, a gate 103 and a wiring 104 are formed, and using the above as a resist mask, the source and drain for a P and N channel FET is formed, and then an inter-layer insulating film 105 is deposited. Then, a metal 108 is evaporated on the contacted part of the P-channel FET, and a photoetching is performed. Subsequently, a metal silicide is formed by performing a heat treatment wherein a metal 108 and a polycrystalline Si 104 are reacted. Accordingly, the P-N junction of the P-channel contact part, which existed before it was brought into a silicide state, disappears and the ohmic contact can be maintained between the source and drain 107 of the P-channel FET and the polycrystalline Si 104.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| SRAM单元及包括SRAM单元的存储器和电子设备 | 2020-05-08 | 796 |
| 一种半导体器件以及制备方法、电子装置 | 2020-05-11 | 900 |
| 垂直通道存储器中的自对准二硅硅化物位线与源极线着陆垫 | 2020-05-11 | 612 |
| 一种形成自对准接触部的方法 | 2020-05-12 | 181 |
| 解决SRAM单元器件金属硅化物缺陷形成的方法 | 2020-05-11 | 812 |
| 具有嵌入式存储器件的结构、集成电路结构及其制造方法 | 2020-05-12 | 739 |
| 用于产生经调节隔离供电电压的方法及设备 | 2020-05-12 | 99 |
| 形成自对准触点 | 2020-05-08 | 732 |
| 集成电路器件 | 2020-05-11 | 785 |
| 镍硅化物的制造方法 | 2020-05-11 | 413 |
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