Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable the self-alignment of a contact hole, by utilizing the difference in oxidic film growth thickness on a silicon or silicide layer and an silicon oxynitride layer.
CONSTITUTION: A field oxide film 2 and a gate oxide film 3 are produced on a P- type Si substrate 1. The surface of the film 3 is nitrogenized to produce a silicon nitride layer 10. Polycrystalline silicon 11 is partially provided on the surface of the layer 10. The surfaces of the layer 10 and the polycrystalline silicon 11 are oxidized to make SiO
2 films 13, 12. The thickness ratio of the film 12 to the other 13 is about 8:1. The film 13 is then removed by etching or the like. At that time, the decrease in the thickness of the film 12 is very small as to the total film thickness. A source and a drain 15, 16 are then produced. A source and a drain electrodes 17, 18 are manufactured. According to this method, the contact hole of the source and the drain is made through the self-alignment of the N
+ layers of the source and the drain. Therefore, the N
+ layers can be made small enough.
COPYRIGHT: (C)1981,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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