Manufacturing of semiconductor device
专利汇可以提供Manufacturing of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain MOSIC with reduced number of masking operations, by oxidizing the surface of a pattern made of Si or the like after the pattern is formed on a gate oxidation film through an oxidation protection film, and by removing except on a side wall and covering Si or the like, thereby lifting off at the side wall.
CONSTITUTION: A channel dope 11 is formed after an oxidation protection film 10 such as Si
3 N
4 is formed on a field oxidation film 8 and a gate oxidation film 9. Next, a pattern consisting of Si or a metal silicide 12 and an oxidation protection film 13, is formed. After the surface of the pattern is oxidized and a SiO
2 layer 14 is formed, ions are supplied to form a source-drain diffusion areas 15. Next, the oxidation protection film 13, the gate oxidation film except for the channel section, the Si or silicide layer 12, and the oxidation protection film 10 are removed in this order, thereby forming a wall made by SiO
2 , then a film 16 for wiring is covered which is formed into a gate wiring and a source-drain wiring by lifting off the SiO
2 wall 14. Finally, an ion supplid layer 17 is formed to obtain a gate selfaligned MOSIC.
COPYRIGHT: (C)1980,JPO&Japio，下面是Manufacturing of semiconductor device专利的具体信息内容。
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