Semiconductor ic device and its manufacture
专利汇可以提供Semiconductor ic device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE:To simplify the surface smoothing of buried material reducing the wiring capacity between a wiring on a nonactive region and a substrate by a method wherein the width of the deep grooves in the isolated regions between elements are made almost the same while a thick oxide film is formed on the surface of a nonactive region. CONSTITUTION:The depth of the grooves 3 shall exceed that of a buried layer 5 while those grooves 3 are formed by reactive etching subect to almost no side ecthing. The masking property for this etching being excellent in the order of Si, Si3N4, SiO2, the deep grooves 3 are formed making use of such a difference in the masking property. Successively after forming a silicon oxide film 17 on the inner surface of the exposed deep grooves 3 by thermal oxidation, a buried material 4 as an insulator such as multiple silicon or SiO2 is deposited on the overall surface of an Si substrate 2 by CVD process. Next the deposited buried material 4 is removed by the isotropic etching and the surface of Si body 100 is smoothed finishing the isolation process.，下面是Semiconductor ic device and its manufacture专利的具体信息内容。
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