Semiconductor storage device and its manufacture
专利汇可以提供Semiconductor storage device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain an SRAM with a small occupied area in which tunnel diodes having excellent characteristics are used, by forming MOS transistors and tunnel diodes, so as to be superposed by adopting an SOI structure.
CONSTITUTION: In a region surrounded by an element isolation insulating film 2 on a p-type silicon substrate 1, a gate electrode 4 is formed via a gate insulating film 3, and an n-type source region 5 and an n-type drain region 6 self- aligned to the gate electrode 4 are formed, thereby forming an MOS transistor Q. The substrate on which the MOS transistor is formed is coated with an insulating film 7, and a silicon film 8 is formed thereon. In said silicon film 8, a second tunnel diode D
2 is constituted in the lateral direction by using p-type regions 8
1 and n-type regions 8
2 which are alternately arranged and formed in the direction of the gate electrode 4. The p-type region 8
1 is commonly used by adjacent memory cells. The n-type region 8
4 of a first tunnel diode D
1 also is commonly used by adjacent memory cells. Thus a row of tunnel diodes is formed in the belt type silicon film 8.
COPYRIGHT: (C)1991,JPO&Japio，下面是Semiconductor storage device and its manufacture专利的具体信息内容。
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1 接收器模块
