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Semiconductor laser element

阅读:749发布:2021-02-21

专利汇可以提供Semiconductor laser element专利检索,专利查询,专利分析的服务。并且PURPOSE: To obtain the steady basic horizontal mode oscillation for the semiconductor laser element of stripe structure by setting the majority carrier density to 1×10
18 ∼1×10
19 /cm
3 at the active region within the stripe and setting the stripe width to under double the effective diffusion length of the injection carrier.
CONSTITUTION: N-type Al
0.3 Ga
0.7 As layer 2, N-type GaAs active layer 3 of 2×10
18 / cm
3 carrier density and N-type Al
0.3 Ga
0.7 As layer 4 are grown in lamination through the liquid-phase growth method on N-type GaAs substrate 1, thus obtaining the double hetero-junction. Then SiO
2 selective diffusion film 5 is formed on layer 4, and stripe-type active region 6 reaching layer 2 is formed through diffusion of Zn. In this case, the impurity density is set to 1×10
18 ∼1×10
19 /cm
3 for part 7 of region 3 through which region 6 pierces through, and at the same time the stripe width is set under double the effective diffusion length of the electron. After this, Au. Cr electrode 8 is attached ranging from region 6 to film 5, and Au.Ge.Ni electrode 9 is attached on the back of the substrate
COPYRIGHT: (C)1979,JPO&Japio,下面是Semiconductor laser element专利的具体信息内容。

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