Manufacturing method of semiconductor device
专利汇可以提供Manufacturing method of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable to form an ohmic contact against a shallow impurity region of a semiconductor device with the laser beam application by a method wherein a shallowly damaged layer is made at the open part of an impurity region by an ion implantation, and a metallic wiring is performed and the laser beam is applied to it.
CONSTITUTION: A thermal oxidation film 2 on a Si substrate 1 is partially opened, using it as a mask an impurity diffusion layer 3 is formed, and an opening for a contact making is made on the thermal oxidation film. A damaged layer 5 is formed on the surface of a diffusion layer 3 by an ion implantation, applying an inert ion beam like Ar
+ , Si
+ or an impurity ion which is identical in conductivity with the diffusion layer at the area of about 10
16 /cm
2 and keeping the ion range in a part of the depth of the diffusion layer. Then after a wiring pattern 6 of about 0.5μm thickness is formed, exposed to a laser beam of several 10nsec pulse width and 1W2j/cm
2 irradiation energy density, and an ohmic contact consisted of an eutectic alloy 8 is formed.
COPYRIGHT: (C)1980,JPO&Japio，下面是Manufacturing method of semiconductor device专利的具体信息内容。
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