Method of fabricating semiconductor device
专利汇可以提供Method of fabricating semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To avoid the deterioration and the punch-through of an electrode in a semiconductor device by implanting ion into the substrate with metallic gate electrode formed when forming a MOS transistor as a mask and then annealing the ion implanted layer.
CONSTITUTION: An SiO
2 film 22 is coated on an n-type silicon substrate 21, perforated with openings, and p-type source and drain regions 24 and 25 are diffused through the openings in the substrate 21. Then, the film 22 retained among the regions is shaped and used as a gate SiO
2 film 23. A source electrode 26 is mounted at the region 24, a drain electrode 27 is mounted at the region 25, and a gate electrode 28 is mounted at the film 23 using aluminum. Thereafter, with the electrode 28 as a mask
11 B
+ ion is implanted in the substrate 21 to form an ion implanted layer 29 on the surface of the substrate 21 between the regions 24 and 25. After a laser light is irradiated from a pulse laser to the substrate 21, the substrate 21 is heat treated. Thus, the variation of the mutual conductance of a MOS transistor thus formed becomes remarkably low such as less than ±2% to reduce the characteristic variation of the transistor.
COPYRIGHT: (C)1980,JPO&Japio，下面是Method of fabricating semiconductor device专利的具体信息内容。
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