Planar type thyristor
专利汇可以提供Planar type thyristor专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain stable operation of thyristor by a method wherein width and diffusion depth of a channel stopper which composes a planar type thyristor is chosen to be a specified value. CONSTITUTION:An N-type semiconductor substrate 2 built as a base is surrounded by a P-type region 3 which has a part that breaks through it, and at the center of the surrounded substrate 2 a P-type region 4 is formed by diffusion and within it an N -type region 5 is formed. A thyristor is built by an N -type stopper channel region 1 being formed by diffusion around the region 4, and by this constitution operational stability so depends on width W of the region 1 and diffusion depth Xj, that width of the region 1 is made to be W>=LP when LP is taken to be diffusion length of minority carriers in the substrate that acts as a base, and diffusion depth Xj of the region 1 is taken to be deeper as possible. Parastic bipolar transistors accompanied by surface inversion layers are made to have a lower current amplification gain, and hindrance capability against them is improved and higher operational stability is attained.，下面是Planar type thyristor专利的具体信息内容。
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