专利汇可以提供Low-Power Inverter-Based Differential Amplifier专利检索,专利查询,专利分析的服务。并且A new inverter-based fully-differential amplifier is provided including one or more common-mode feedback transistors coupled to each inverter, which transistors operate in the liner region. Accordingly, due to the fully-differential nature of the new inverter-based fully-differential amplifier, the amplifier provides an improved Power Supply Rejection Ratio (PSRR), provides a reduced sensitivity to supply voltage and process or part variations, and does not require an auto-zeroing technique to be utilized, which ultimately saves power, all while utilizing the low-voltage and low-power advantages of an inverter-based design.,下面是Low-Power Inverter-Based Differential Amplifier专利的具体信息内容。
What is claimed is:
This application claims the benefit of European Patent Application No. 13290056.4, filed Mar. 13, 2013, the contents of which are incorporated by reference as if fully rewritten herein.
This invention relates generally to differential amplifiers.
Differential amplifiers, as understood in the art, are commonly used building blocks in analog circuits. A known technique involving differential amplifiers is to use an inverter as a low-voltage rail-to-rail amplifier. However, this known technique provides only a pseudo-differential amplifier (rather than fully-differential). Because of this, previous inverter-based pseudo-differential amplifiers are sensitive to supply voltage variations and process or part variations, which can result in poor Power Supply Rejection Ratio (PSRR) and other added noise on the output.
Generally speaking and pursuant to these various approaches, a new inverter-based fully-differential amplifier is provided. The inverter-based differential amplifier includes one or more common-mode feedback transistors coupled to each inverter that operates in the linear mode. Accordingly, the inverter-based differential amplifier becomes fully differential so as to provide an improved PSRR, reduced sensitivity to supply voltage and process or part variations, and does not require an auto-zeroing technique to be utilized, which ultimately reduces complexity, silicon surface area, and power usage. These and other benefits may become clearer upon making a thorough review and study of the following detailed description.
Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions and/or relative positioning of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of various embodiments of the present invention. Also, common but well-understood elements that are useful or necessary in a commercially feasible embodiment are often not depicted in order to facilitate a less obstructed view of these various embodiments. It will further be appreciated that certain actions and/or steps may be described or depicted in a particular order of occurrence while those skilled in the art will understand that such specificity with respect to sequence is not actually required. It will also be understood that the terms and expressions used herein have the ordinary technical meaning as is accorded to such terms and expressions by persons skilled in the technical field as set forth above except where different specific meanings have otherwise been set forth herein.
Referring now to the drawings,
This example switched-capacitor integrator (used, for instance, with sigma-delta modulation) involves a two-phased (φ1 and (φ2) approach to load a differential input voltage (i.e., VIP and VIM) on to sampling capacitors Cs 106 during phase φ1 through operation of switches 108 and 110. During phase φ2, the charge in sampling capacitors Cs 106 is then placed onto the input of each inverter 102, 104 by opening switches 108 and 110 and closing switch 112. Capacitor Cc 114 is used for auto-zeroing to create a virtual ground (VG) and to accommodate sampling offset. Switch 116 operates to reconnect the integrator feedback capacitor CI 118 to the input of the inverter 102, 104 during phase (φ2 to complete the process. To implement this pseudo-differential approach, an auto-zeroing switch 120 is utilized to zero-out the inverter 102, 104 during each phase φ1. Auto-zeroing is required in this pseudo-differential architecture to help remove offset between the differential inputs VIP and VIM through operation of switches 110 to remove any offset at the virtual ground VG, and switches 120 to sample the offset. Further, to help remove offset, the capacitors and switches in sub-circuits 122 are added to help maintain a mid-point voltage on the input.
The particulars of this example configuration are not required to fully understand the operation of the inverter-based pseudo-differential amplifier or the new inverter-based fully-differential amplifier 200. However, auto-zeroing switches 110, 116, 120 and capacitors 114, 122 are required by the inverter-based pseudo-differential amplifier because single input inverters are used. These switches and capacitors increase the complexity and silicon surface area required. Further, such a configuration is not actually fully differential and thus is sensitive to supply voltage variations and process or part variations, which results in poor Power Supply Rejection Ratio (PSRR) and other added noise on an output.
To resolve the issues identified above, a new inverter-based fully-differential amplifier is provided 200.
The amplifier 200 also includes a first p-channel transistor 214 and a first n-channel transistor 216, each coupled to the first inverter 202, and a second p-channel transistor 218 and a second n-channel transistor 220, each coupled to the second inverter 204. Each of the first and second p- and n-channel transistors 214, 216, 218, 220 is configured to operate in a linear mode or linear region and to operate as a common-mode feedback control for each inverter 202, 204. By using this linear mode common-mode feedback control, the amplifier 200 is configured to control a common-mode signal on the output signals OUTM and OUTP. By one approach, each of these additional transistors 214, 216, 218, 220 are CMOS transistors, though other transistor topologies are possible.
In one example, the transistors 214, 216, 218, 220 are coupled to the first and second inverter 202, 204 as follows. The first p-channel transistor 214 is configured such that its drain is operatively coupled to the positive supply of the first inverter 202 (i.e., the source of the p-channel transistor 210 of the first inverter 202), its gate to the output signal OUTP, and its source to a positive power supply (i.e., AVDD). The second p-channel transistor 218 is similarly configured such that its drain is operatively coupled to the positive supply of the second inverter 204 (i.e., the source of the p-channel transistor 212 of the first inverter), its gate to the output signal OUTM, and its source to the positive power supply. The first n-channel transistor 216 is configured such that its drain is operatively coupled to the negative supply of the first inverter 202 (i.e., the source of the n-channel transistor 206 of the first inverter 202), its gate to the output signal OUTP, and its source to a negative power supply (i.e., AVSS). The second n-channel transistor 220 is similarly configured such that its drain is operatively coupled to the negative supply of the second inverter 204 (i.e., the source of the n-channel transistor 208 of the second inverter 204), its gate to the output signal OUTM, and its source to the negative power supply.
By another approach, the positive supplies of the first and second inverters 202, 204 are coupled together to form a positive node 222 and the negative supplies of the first and second inverters 202, 204 are coupled to form a negative node 224. This coupling effectuates the fully-differential aspect of the amplifier 200. The amplifier 200 effectuates linear mode common-mode feedback control to these nodes 222, 224 through the first and second p- and n-channel transistors 214, 216, 218, 220 to control the common-mode signal on the differential outputs OUTP and OUTM. To do this, the amplifier 200 is configured to adjust an effective resistance between the positive node 222 and the positive voltage power supply with the first and second p-channel transistors 214, 218 and to adjust an effective resistance between the negative node 224 and the negative voltage power supply with the first and second n-channel transistors 216, 220.
So configured, an inverter-based fully-differential amplifier 200 is provided. The fully-differential aspect of the amplifier 200 allows for a high Common Mode Rejection Ratio (CMRR) for rejection of common mode noise, high Power Supply Rejection Ration (PSRR), and very low sensitivity to process or part variations. With non-fully-differential amplifiers, such as the pseudo-differential amplifiers shown in
It may be desirable in some instances to achieve a higher gain than may be output by a single stage of the inverter-based fully-differential amplifier 200. A single stage may be capable of producing a gain of approximately 50-60 dB. However, if these teachings are repeated for a second stage amplifier, output gain can increase to as much as 80 dB or more.
Referring now to
Like the first stage 200, the second stage amplifier 302 includes third and fourth p-channel and n-channel transistors 308, 310, 312, 314, each of which is configured to operate in the linear region. As before, these transistors 308, 310, 312, 314, and the transistors of the third and fourth inverters 304, 306, are CMOS transistors by at least one approach. The third p-channel transistor 308 is configured such that its drain is operatively coupled to the positive supply of the third inverter 304, its gate to the output signal OUTM2, and its source to the positive power supply. The fourth p-channel transistor 310 is similarly configured such that its drain is operatively coupled to the positive supply of the fourth inverter 306, its gate to the output signal OUTP2, and its source to the positive power supply. The third n-channel transistor 312 is configured such that its drain is operatively coupled to the negative supply of the third inverter 304, its gate to the output signal OUTM2, and its source to the negative power supply. The fourth n-channel transistor 314 is similarly configured such that its drain is operatively coupled to the negative supply of the fourth inverter 306, its gate to the output signal OUTP2, and its source to the negative power supply.
Also like the first stage 200, by at least one approach, the positive supplies of the third and fourth inverters 304, 306 are coupled together to form a second positive node 316 and the negative supplies of the third and fourth inverters 304, 306 are coupled to form a second negative node 318. The effective resistance between the second positive node 316 and the positive voltage supply can be adjusted by the third and fourth p-channel transistors 308, 310 operating parallel to each other and in the linear region. The effective resistance between the second negative node 318 and the negative voltage supply can be adjusted by the third and fourth n-channel transistors 312, 314 also operating parallel to each other and in the linear region.
By another approach, the third and fourth p-channel transistors 308, 310 receive a common mode signal at their respective gates instead of the second stage output signal (OUTP2 and OUTM2). As is shown in
Continuing with
With this multi-stage inverter-based fully-differential amplifier 300, gain as high as 80 dB can be attained while maintaining the higher CMRR and PSRR as well as reduced sensitivity to process and part variations. Moreover, these teachings are highly scalable and can be employed using additional amplification stages, including a third stage, a fourth stage, or even further stages. Further, these teachings can be utilized with various other amplification stages and in various other configurations not discussed here.
Turning now to
Those skilled in the art will recognize that a wide variety of modifications, alterations, and combinations can be made with respect to the above described embodiments without departing from the scope of the invention, and that such modifications, alterations, and combinations are to be viewed as being within the ambit of the inventive concept.
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