Image-transducing storage tube
阅读：213发布：2023-05-02
专利汇可以提供Image-transducing storage tube专利检索，专利查询，专利分析的服务。并且An electronic storage tube is disclosed which enables imageconfigurated radiant energy to be directly transformed into a corresponding charge pattern on an insulating mosaic surface of the tube target. In a preferred embodiment of the invention, the target of the tube comprised a doped silicon substrate, upon which a mosaic of insulating silicon dioxide islands has been formed. Those areas of the substrate not covered by the insulator are diffused with an impurity of the same type as the background silicon, resulting in a degenerate surface layer in said areas with consequent electrical isolation of said islands. Manipulative process steps are also set forth enabling formation of the charge pattern on said substrate, and enabling nondestructive readout thereof.，下面是Image-transducing storage tube专利的具体信息内容。
1. A radiant energy sensitive storage tube for transducing an incident radiant energy pattern into a stored charge pattern in said tube, comprising: an evacuated envelope; a storage target posiTioned within said envelope to receive said incident radiation pattern, said target comprising: a single conductivity-type, doped semiconductor substrate adapted for formation of hole-electron pairs in the bulk thereof in response to said incident radiation; a mosaic of discrete insulating islands overlying said substrate for receiving charge at the surfaces thereof in correspondence to minority carrier and lattice charge variations in adjacent portions of said underlying semiconductor, the surface of said substrate between said islands being free of insulation; means for adjustably biasing said substrate; and electron beam scanning means positioned within said envelope for scanning said target and applying charge to said mosaic.
2. Apparatus in accordance with claim 1 wherein said substrate includes a diffused impurity layer of the same conductivity type as said substrate, in at least those surfaces of said substrate between said islands.
3. Apparatus in accordance with claim 1 wherein said substrate includes a diffused impurity layer of the same conductivity type as said substrate, at all surfaces of said substrate not covered by said insulating islands.
4. Apparatus in accordance with claim 1, wherein said semiconductor comprises doped silicon and said islands comprise an oxide of silicon.
5. Apparatus in accordance with claim 4 wherein said islands comprise silicon dioxide and are genetically derived from said underlying silicon.
6. Apparatus in accordance with claim 5 wherein said silicon is of N-type conductivity.
7. Apparatus in accordance with claim 6 wherein said substrate includes a diffused N+ impurity layer in at least those surfaces of said substrate between said oxide islands.
8. Apparatus in accordance with claim 6 wherein said substrate includes a diffused N+ impurity layer at all surfaces of said substrate not covered by said oxide.
9. Apparatus in accordance with claim 8 wherein said islands are squares separated by a grid of N+ diffused regions of the silicon substrate.
10. Apparatus in accordance with claim 3, further including readout means connected to said substrate for receiving the modulated current therefrom as said target is scanned by said electron beam through the spaces of said overlying charge-bearing mosaic.
11. A method for transducing an incident radiation pattern to a charge pattern on an insulating mosaic overlying a doped semiconductor substrate, of the type adapted to produce hole-electron pairs in the bulk thereof in response to said radiation, comprising in sequence the steps of: charging the surface of said mosaic to a uniform potential while flooding said semiconductor with said radiation and biasing said substrate to a polarity opposite that of said charge and the conductivity type of said semiconductor whereby radiation-generated minority carriers migrate to the interface of said semiconductor and said mosaic; increasing said biasing potential and recharging in the absence of said radiation to said uniform potential, whereby additional charge is deposited on said mosaic and lattice charge of the same sign as said minority carriers appears at said interface; exposing the said semiconductor to said radiation pattern to create additional minority carriers at interface areas adjacent semiconductor portions exposed to said patterned radiation; and recharging said mosaic surface to said uniform potential, whereby points thereof overlying radiation struck portions of said semiconductor take on additional charge to yield said charge pattern corresponding to said radiation pattern.
12. A method in accordance with claim 11, further including the sequential step of flooding the semiconductor with sensitizing radiation to discharge remnant depletion zones, thereby allowing additional minority carries to migrate to the said interface and vary the potential of points on said mosaic surface.
13. A method in accordance with claim 12, further includiNg the additional sequential step of lowering the said bias potential whereby the maximum potential at the mosaic surface is below the cathode potential utilized for the electron gun.
14. A method in accordance with claim 13 wherein said operations are conducted in an evacuated envelope, and said charging is effected by sweeping said mosaic with the beam of a cathode-grounded electron gun.
15. A method in accordance with claim 14, including the additional sequential step of reading out the stored charge pattern on said mosaic by scanning said substrate with said electron gun beam through spaces in said mosaic, and sensing the modulated current from said substrate through the lead to the means effecting said biasing.
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