专利汇可以提供Preparation of semiconductor integrated circuit专利检索,专利查询,专利分析的服务。并且PURPOSE: To prevent the lowering of breakdown voltage, the increase of leak currents, etc., by forming a silicon film on an insulator monocrystal substrate that a monocrystal silicon layer is removed by means of directional etching, and by changing the silicon film into a silicon oxide film by means of thermal oxidation.
CONSTITUTION: A silicon oxide film 3 and a silicon nitrising film 10 are selectively made up on a monocrystal silicon layer 2 built up on a sapphire substrate 1. A portion where a functional region is not formed is turned into a silicon film 2a with approximate 1000Å thickness by treating the monocrystal silicon layer 2 by means of directional etching while using the silicon oxide film 3 and the silicon nitrising film 10 as masks. A silicon oxide film 11 is made up by oxidizing the silicon film 2a in a high temperature oxidizing atmosphere while employing the silicon nitrising film 10 as the mask. The functional region is built up to the monocrystal silicon layer in the same manner as conventional devices.
COPYRIGHT: (C)1980,JPO&Japio,下面是Preparation of semiconductor integrated circuit专利的具体信息内容。
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