Two phase charge coupling element
专利汇可以提供Two phase charge coupling element专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain elements of high charge transfer speeds by forming insulator films and electrodes arranged on one of the N-type and P-type substrates and a layer of the other of them formed on a part of said substrate and applying the voltage waves of reversed polarities respectively to odd number and even number electrodes. CONSTITUTION:On a part of the surface of an N-type silicon substrate 1, a P-type diffused layer 11 is formed, insulator films 21i, 22i, 21i' and 22i'(i=i'=1,2...)for forming channel inverting layers are formed being arranged on both of the N-type silicon substrate 1 and the P-type silicon layer 11, and the insulator films 21i and 21i' are made a little thicker than 22i and 22i'. Aluminium electrodes are formed being arranged on these insulator films, and they are connected in common in such a way that the voltage of terminal I may be applied to electrodes on the odd number insulator films (i=i'=1,3,5...) and the voltage of terminal II may be applied to that on the even number ones (i=i'=2,4,6...). And transferred data are poured into the channel inverting layer of the N-type silicon substrate and the inverting layer of the P-type silicon layer being distributed to them bit by bit.，下面是Two phase charge coupling element专利的具体信息内容。
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5 浮栅的制备方法
