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Method of fabricating semiconductor device

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专利汇可以提供Method of fabricating semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE: To prevent the lower layer aluminum film wiring of a semiconductor device from excessively corroding by providing selectivity at the lower layer aluminum film when aluminum oxide film for insulating the lower layer aluminum film wiring is removed by gas plasma treatment.
CONSTITUTION: An insulator layer 3 having an opening 4 is coated on a semiconductor substrate 1 incorporating an element region 2 at the position corresponding to the opening 4. An aluminum film 5 is coated on the entire surface of the insulator layer 3, and a hybrid aluminum oxide film 6 is further coated on the film 5. Then, a lower layer wiring photoresist film 7a is coated on the desired surface area of the film 6, and the regions coated with no film 7a are converted into porous aluminum oxide films 8. Then, the film 7a is removed from the surface of the film 6, and silicon oxide film 9 is, for example, coated instead as inter-layer insulator film. Further, a photoresist film 7b having an opening pattern is coated on the surface of the film 9 to thereby chemically etch the film 9 so as to expose the film 6. Then, the film 6 is corroded to be removed through the opening by means of plasma treatment to thereby expose the surface of the lower layer aluminum film 5. Since the hybrid aluminum oxide film 6 is corroded several times faster than the films 5 and 9 at this time, it does not excessively corrode. Then, a metal film 11 is wired in contact with the film 5. Thus, the through hole opening treatment can be completed by only one photoresist film coating treatment.
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