Preparation of semiconductor device
专利汇可以提供Preparation of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To form minute patterns with high pattern accurary in the active area by forming a silicon dioxide film for the insulator separation by means of the thermal oxidation of substrate while oxides are remaining.
CONSTITUTION: Form oxidized film 2 of silicon dioxide by thermal oxidation etc. on the main surface of the single conductive type semiconductor substrate 1, form anti-oxidation insulation film 3 on 2, remove photosensitive resin from the inactive are and etch only insulaton film 3 by CF
4 type plasma by using residual photosensitive resin 5 as the mask. Then, form p
+ layer 6 on substrate 1 by means of ion injection, 100...200 KeV, of single conductive type impuirity such as oron, etc. through exposed oxidized film 2. Then, while residual oxdized film 2 is remaining, form silicon diocide film 8 for insulator separation by means of the thermal oxidation of substrate. With this invention, the pattern accuracy of active area is increased and minute patterns can be formed effectively.
COPYRIGHT: (C)1979,JPO&Japio，下面是Preparation of semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
