Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To provide a solar battery on the semiconductor substrate, while separating the former from the latter with insulator film, for forming an integrated circuit and to use the energy from the solar battery obtained by light irradiation for the drive source of the integrated circuit, thereby obtaining a self-operating semiconductor device without increasing its chip area.
CONSTITUTION: The N
+ -type source region 32 and N
+ -type drain region 33 of the N-channel MOS transistor are formed by diffusion on the P-type Si substrate 31; and between these two regions, a gate electrode 34 is provided through insulator film. Next, region 32 is connected to the top surface of substrate 31 by means of external wiring, and then the entire portion is covered with insulator film 35. Later, N-type multiple crystal Si film 36 is made by gas phase growth on film 35, and P- type layer 37 is formed by diffusion on the top-surface layer of Si film 36 to cause a PN junction, thereby forming a solar battery. In this constitution, layer 37 is connected to drain region 33 of the transistor, and film 36 is connected to its source region 32. Further, if necessary, secondary battery 38 for charging and discharging the solar battery may be connected to both ends of the solar battery.
COPYRIGHT: (C)1979,JPO&Japio，下面是Semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
