Production of semiconductor device
专利汇可以提供Production of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain a process for production of the semiconductor device having shallow junctions with good accuracy by forming N type phosphorus doped layers in the shallow surface regions of P type base regions, then forming polycrystalline silicon layers thereafter diffusion-forming emitter regions to a required depth.
CONSTITUTION: The P type base region 2 covered with a silicon oxide layer 1 is provided with an emitter diffusing opening 3 by opening the hole in the insulator layer 1 being a thermally oxidized film in its slallow region 21. In this state the substrate is exposed to an oxidative atomosphere 4 to be deposited with phosphours in the opening, whereby an extremely shallow phosphorus doped layer 5 is formed. Next, a polycrystalline silicon layer 10 without cotaining any impurity is formed through vapor growth, after which the substrate is exposed to a phosphorus oxychloride atmosphere, whereby a phosphorus doped layer 7 is deposited. Next, getter process is sufficiently accomplished, after which an alkali metal getter layer 7 is removed and an emitter region 8 is provided through diffusion. Thereafter, the polycrystalline silicone layer 10' is left part of electrodes.
COPYRIGHT: (C)1979,JPO&Japio，下面是Production of semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
