Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To increase the adhesive performance between the wirings when the multi-layer metal wirings are formed on the semiconductor substrate by providing the lamination film of the polysiloxane and the insulator film with formation of the slant aperture to the insulator film by making use of the high etching velocity of the siloxane.
CONSTITUTION: Insulator film 2 of SiO
2 or the like is coated on Si substrate 1 with the window drilled to form region 3 by diffusion, and 1st layer Al wiring 4 connecting with region 3 is coated on film 2 by being held at the both ends between porous Al
2 O
3 film 5 to be the insulator film. Then nonporous Al
2 O
3 film 6 is coated on only wiring 4 with aperture 7 drilled, and SiO
2 film 8 and polysiloxane film 9 are coated in lamination on the entire surface. After this, pattern 10 of the photo resist film is provided according to the pattern of aperture 7, and film 9 and 8 within aperture 7 are removed by etching to exposed part of wiring 4. In this case, the etching velocity of film 9 is increased to cause slope part 11 to film 8 under film 9. Film 10 is then removed, and layer 12 of film 9 deteriorated by connection with film 10 is plasma-removed. Then 2nd layer Al wiring 13 is coated via part 11.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
