Semiconductor electronic device
专利汇可以提供Semiconductor electronic device专利检索，专利查询，专利分析的服务。并且PURPOSE: To realize the miniature and high-performance circuit element by drawing out plural number of electrodes close to each other through one small hole provided to the insulator film on the surface of the semiconductor substrate and at the same time securing an automatic setting of the inner region's position and the electrode's contact position via the hole edge.
CONSTITUTION: SiO
2 2 and poly Si electrode layer 3a are laminated on substrate 1 and the opening is drilled by etching in order to form the eaves part. Then poly Si3b is laminated to be left only at the lower part of the eaves through the ion milling process. The oxidation is then given to form a thick oxide film over Si3b, and then hydrofluoric acid treatment is given to form selectively SiO
2 film on film 3a and 3b by the difference of the etching speeds. Then the heat treatment is given to form by diffusion p
+ -collector connection layer 14 from the electrode layer through part of p-layer 6. Thus, layer 14 is formed over the entire circumference with automatic setting via the opening and with an extremely small width with no use of the mask. The base diffusion with the collector is possible with just one sheet of the mask and using film 5 used as the master. Thus, the manufacture can be facilitated with a miniature structure as well as reduced serial resistance parasitic capacity.
COPYRIGHT: (C)1979,JPO&Japio，下面是Semiconductor electronic device专利的具体信息内容。
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5 浮栅的制备方法
