Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To increase the degree of integration by providing the hetero-insulator material only at the aperture region and then soaking the insulator material into the etchant which etches only the material when the contact hole is formed to the insulator material coated on the surface of the semiconductor substrate.
CONSTITUTION: Different types of insulator film 2 and 3 are formed in lamination on the prescribed region on the surface of P-type Si substrate 1, and then the heat treatment is given using these insulator films as the mask to cause thick SiO
2 film 4 at the exposed edge of substrate 1. Then the insulator films laminated are removed only this position can be cut by etching, and thin SiO
2 film 5 is coated on the surface of substrate 1 with gate electrode 6 composed of poly-crystal Si formed at the center part of film 5. After this, hetero-insulator film 7 of Si
3 N
4 , AlO
3 and the like is stacked on the entire surface and then made remain only at the formation region of the contact hole in the form of film 8. Then N
+ -type source and drain regions 9 and 10 are formed through ion injection and other methods, and then film 8 is removed from SiO
2 film 11 caused simultaneously with film 8 via the etchant which etches only film 8.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
