Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To secure a high precision for the pattern by removing the poly-crystal layer of the lower layer side through the selective oxidation with utilization of the oxidation speed difference when removing selectively the poly-crystal Si layer of a higher oxidation speed with the poly-crystal Si layer of a lower oxidation speed used as the mask.
CONSTITUTION: Thick field SiO
2 film 12 is formed at the both ends of P-type Si substrate 1, and both thin gate SiO
2 film 14 and P-doped poly-crystal film 16 are grown on the active region surrounded by film 12. Then inter-layer insulator SiO
2 film 18 and non-doped poly-crystal Si film 20 are coated on the entire surface of substrate 1, and the pattern of Si
3 N
4 film 22 is provided on the substrate. After this, the sequential etching is given up to film 16 with film 22 used as the mask, and film 12 is covered with resist film 23 at both ends with the heat treatment applied. Thus, SiO
2 film 14A, 16A and 20A are grown on substrate 10 as well as on the exposed surfaces of poly-crystal film 16 and 18. In this case, the oxidation speed between film 16 and 20, thus increasing the thickness of film 16A. After this, the unnecessary areas are removed to form N
+ -type source and drain region 24 and 26.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
