Semiconductor device and its manufacture
专利汇可以提供Semiconductor device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE: To ensure the high-accuracy formation of minute electrode window while keeping a matching between the semiconductor layer and the edge of the insulator layer by using SiO
2 , Si
3 N
4 and the polyimide-group resin which feature the different etching solutions.
CONSTITUTION: Si
3 N
4 3 is provided on SiO
2 2 on P-type Si substrate 1. and film 3 is etched selectively via the heat phosphoric acid. Poly Si layer 4 is provided at the opening part through the photo etching method, and SiO
2 2 is removed selectively via the HF-group solution. With the phosphorus diffusion given through the opening, N-layer 7 and 8 are obtained, and layer 4 features the conductive property to be covered with SiO
2 9 and 10. After this, polyimide resin 11 is coated up to the same level as layer 4 with the heat treatment applied, and then the photo etching is given under the semi-hardened state to drill opening 12 and 13. The etching solution uses the aqueous solution of 40∼80 hydrazine and does not etch film 2 and 3, thus a high- accuracy not required for opening 12 and 13. Then a heat-treatment is given at about 300°C to secure hardening. Film 9 and 10 are then etched selectively via the HF-group solution to form Al wirings 14∼16. Thus, the matching is secured between wiring 14/15 and N-layer 7/8 with no short circuit caused to the adjacent regions.
COPYRIGHT: (C)1979,JPO&Japio，下面是Semiconductor device and its manufacture专利的具体信息内容。
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5 浮栅的制备方法
