Constant voltage generating circuit
专利汇可以提供Constant voltage generating circuit专利检索，专利查询，专利分析的服务。并且PURPOSE: To produce a high-accuracy constant voltage which has little scatter and is hardly affected by temperature, by providing two insulator-gate field-effect semiconductor devices different in electric characteristics.
CONSTITUTION: An element for picking out the energy gap of silicon as a voltage signal has P
+ -type semiconductor regions 4, 5 constituting the sources and drains of MIS-FET's on an n-type semiconductor substrate 1. A semiconductor impurity of the same electroconductive type as the substrate is contained in a polysilicon layer constituting the gate 6' of one MIS-FET Q1. A semiconductor impurity of the opposite electroconductive type to the substrate is contained in a polysilicon layer constituting the gate 6 of another MIS-FET Q2. The drain and gate of the MIS-FET Q1 of lower work function are connected to each other to supply a power voltage through a load resistor R1. Thus, a constant voltage generating circuit having a high accuracy and appropriate as a monolithic integrated circuit is obtained.
COPYRIGHT: (C)1979,JPO&Japio，下面是Constant voltage generating circuit专利的具体信息内容。
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5 浮栅的制备方法
