Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To form the 2nd rsistance wiring through the insulator thin film by forming the island-shaped poly Si layer on the insulator thick and thin films on the Si substrate and changing the island-shaped layer into the 1st resistance wiring via injection of the ion.
CONSTITUTION: SiO
2 thick film 2 and thin film 3 are formed selectively on p-type Si substrate 1 and then covered with the poly Si, and island layer 4 is formed through the selective etching. Then the phosphorus ion is injected to form high- resistance gate 4a', n
- -type high-resistance layer 5a and 5b, high-resistance wiring 4b' and 4c', and high-resistance layer 5c and 5d respectively. Then CVDSiO
2 mask 6a and 6b are formed selectively, and the n
+ -layer is formed through the phosphorus diffusion. At the same time, the phosphorus is added partially to the high- resistance poly Si layer to obtain n-channel FET at region I, resistance layer 4b' of about 30Ω/cm
2 and high-resistance layer 4c' of several GΩ/cm
2 at resion II, and diffusion resistance 5c' of about 15Ω/cm
2 and high resistance 5d of KΩ/cm
2 at region III respectively. Thus, the four types of resistance are obtained in this constitution, which is advantageous for the layout of the circuit design.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 绝缘体上半导体结构以及制备方法 | 2020-05-08 | 674 |
| 半导体器件及其制造方法 | 2020-05-08 | 571 |
| 用于管腔内超声成像换能器的埋入式沟槽以及相关的设备、系统和方法 | 2020-05-08 | 813 |
| 用于制备用于微组装的GaN及相关材料的系统及方法 | 2020-05-08 | 48 |
| 绝缘体上半导体元器件及其制造方法 | 2020-05-08 | 670 |
| 电容性微结构 | 2020-05-08 | 606 |
| 带有梳状传输线的单片电光调制器 | 2020-05-08 | 963 |
| 半导体装置 | 2020-05-11 | 961 |
| 一种基于压电材料的压力传感器及制备方法 | 2020-05-11 | 184 |
| 硅基光耦合结构、硅基单片集成光器件 | 2020-05-12 | 63 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
-
5 浮栅的制备方法
