Mis-type semiconductor device and its manufacture
专利汇可以提供Mis-type semiconductor device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE: To eliminate occurrence of the warp or the like for the conductor layer as well as to increase the element density and to minimize the size of the device by forming the insulator layer into which the conductor layer is buried with use of the heat-fused glass as its starting material.
CONSTITUTION: Thick SiO
2 film 4 is coated at the circumference of semiconductor substrate 1, and at the same time thin SiO
2 film 9 is coated on the surface enclosed by film 4. And conducting layer 51 composed of poly-crystal Si is grown on the entire surface and then insulator layer 52 of the heat fusing glass material is coated. Then the photo etching is applied to leave conducting layer 10 composed of poly- crystal layer 51 and the lamination of insulator layer 53 composed of glass layer 52, and then the heat fusion treatment is given in the N
2 gas to enclose the upper and side surfaces of the lamination with glass insulator layer 54. After this, exposed film 9 is removed, and window 14 is drilled at the center part of layer 54 to form there conducting layer 15 of poly-crystal Si connecting the layer 10. Furthermore, conducting layer 13 is coated from part 11 of layer 54 with its circumference thinned through onto film 4, and the ion is injected to form region 5 and 6 of opposite conducting type to substrate 1 within the substrate.
COPYRIGHT: (C)1979,JPO&Japio，下面是Mis-type semiconductor device and its manufacture专利的具体信息内容。
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5 浮栅的制备方法
