Manufacture of mis-type semiconductor device
专利汇可以提供Manufacture of mis-type semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To increase the element density and thus to realize a miniature device by coating the thick insulator film on the semiconductor substrate with a large window drilled, forming the conductor layer which is covered with the insulator film to prevent the oxidation within the window with the taper provided at the circumference and then forming the diffusion layer using the taper as the mask.
CONSTITUTION: Thick SiO
2 film 22 is coated on P-type Si substrae 21 with large window 23 drilled, and thin SiO
2 film 25 is grown within the window through the heat treatment. Then lamination 33 composed of poly-crystal Si layer and Si
3 N
4 film is formed only within window 23, and the taper is formed at the circumference through the oblique etching. Using this taper as the mask, the ion is injected through film 25 to form N-type region 36 and 37. After this, opening 44 and 45 are drilled to film 41 which increased its thickness with film 25 and the SiO
2 film grown then, and the Si
3 N
4 film of lamination 33 is removed to expose poly-crystal Si layer 27. Then conductor layer 48 is coated on the entire surface, and the selective etching is applied to leave conductor layer 49 on layer 27 and conductor layer 50 and 51 conducting to layer 49 on region 36 and 37 respectively.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of mis-type semiconductor device专利的具体信息内容。
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5 浮栅的制备方法
