专利汇可以提供DIFFERENTIAL NITRIDE PULLBACK TO CREATE DIFFERENTIAL NFET TO PFET DIVOTS FOR IMPROVED PERFORMANCE VERSUS LEAKAGE专利检索,专利查询,专利分析的服务。并且Disclosed are embodiments of an integrated circuit structure with field effect transistors having differing divot features at the isolation region-semiconductor body interfaces so as to provide optimal performance versus stability (i.e., optimal drive current versus leakage current) for logic circuits, analog devices and/or memory devices. Also disclosed are embodiments of a method of forming the integrated circuit structure embodiments. These method embodiments incorporate the use of a cap layer pullback technique on select semiconductor bodies and subsequent wet etch process so as to avoid (or at least minimize) divot formation adjacent to some but not all semiconductor bodies.,下面是DIFFERENTIAL NITRIDE PULLBACK TO CREATE DIFFERENTIAL NFET TO PFET DIVOTS FOR IMPROVED PERFORMANCE VERSUS LEAKAGE专利的具体信息内容。
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