Schottky diode clipper device
阅读：486发布：2023-10-17
专利汇可以提供Schottky diode clipper device专利检索，专利查询，专利分析的服务。并且A pair of Schottky barrier diodes formed on a single substrate of semiconductor material so that they are connected in a parallel opposed relationship and a lead may be attached to each side thereof in axially outwardly extending relationship.，下面是Schottky diode clipper device专利的具体信息内容。
1. An improved diode clipper device comprising: a. a substrate layer of semiconductor material having two opposed major surfaces; b. said substrate layer being divided into first, second and third sections each having first and second opposed surfaces cooperating to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section, and said first and third setions having an impurity therein for providing conductivity of a first type and said second section having an impurity therein for providing conductivity of a second type; c. a first type of metal deposited on the first surface of said first section and the second surface of said third section for forming two Schottky barrier diodes; and d. a second type of metal deposited on said first type of metal, the second surface of said first section and the first surface of said third section for providing ohmic connection with said first type of metal and said first and third section to connect said Schottky barrier diodes in a parallel opposed relationship.
2. An improved diode clipper device as set forth in claim 1 including in addition layers of insulating material overlying the first and second surfaces of the second section and portions of the first and second surfaces of the first and third sections.
3. An improved diode clipper device as set forth in claim 1 wherein the first type of metal includes chromium.
4. An improved diode clipper device as set forth in claim 1 wherein the second type of metal includes gold.
5. An improved diode clipper device as set forth in claim 1 wherein each of said first and second sections includes a layer of semiconductor material having a relatively low concentration of impurities therein underlying and electrically engaged with the first type of metal and a layer of semiconductor material having a relatively high concentration of impurities therein underlying and electrically engaged with the second type of metal.
6. An improved diode clipper device as set forth in claim 1 wherein the first and third sections of the substrate layer are N type conductivity and the second section is P type.
7. A method of producing an improved diode clipper device including the steps of: a. providing a substrate layer of semiconductor material having two opposed surfaces; b. introducing impurities into said layer to form said layer into first, second, and third sections, each having first and second opposed surfaces cooperative to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section and said first and third sections having a first type of conductivity and said second section having a second type of conductivity; c. depositing barrier metal on the first surface of the first section and the second surface of the third section to form Schottky barrier diodes at opposed surfaces of said substrate layer; and depositing connecting metal on the opposed major surfaces of said substrate layer to connect the Schottky barrier diodes in opposed parallel relationship.
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