Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy专利检索-肖特基二极管二极管电子零件及设备专利检索查询-专利查询网

Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy

阅读：16发布：2023-10-23

专利汇可以提供Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy专利检索，专利查询，专利分析的服务。并且A gallium-arsenide Schottky barrier diode for microwave mixing and detecting with small local oscillator power has a rectifying metal-semiconductor contact made of an eutectic alloy of gold and germanium formed on the GaAs substrate while the latter is at a temperature below the eutectic for the Au-Ge alloy.，下面是Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy专利的具体信息内容。

权利要求

2. A diode according to claim 1 having forward conductance starting in the range approximately 0.2 to 0.4 volt.

3. A diode according to claim 1 in which said epitaxial layer is approximately 0.5 micrometer thick.

4. A diode according to claim 1 in which said alloy is in a layer approximately 1,000 Angstrom units thick.

5. A gallium arsenide Schottky barrier junction comprising a body of ''''n'''' type gallium arsenide with carrier concentration on the order of 1 X 1016 atoms cm 3 and a rectifying metal-semiconductor contact made of an alloy of gold and germanium formed therein while said body is at a temperature below the eutectic for said alloy.

6. A gallium arsenide Schottky diode having forward conductance starting in the range substantially 0.2 to 0.4 volt comprising a body of n-type gallium arsenide single crystal having ''''n+'''' substrate doped to a level between approximately 7 X 1017 and 1 X 1018 atoms cm 3 and on the substrate an epitaxial ''''n'''' layer with carrier concentration about 7 X 1015 atoms cm 3 approximately 0.5 micrometer thick, a layer of silicon dioxide on said epitaxial layer with a window approximately 7.5 micrometers in diameter therethrough, and a layer approximately 1,000 Angstrom units thick of substantially hyperpure gold-germanium eutectic alloy consisting essentially of 88 weight % gold and 12 weight % germanium overlying said SiO2 layer and in contact with said epitaxial layer through said window.

7. Method of making a gallium arsenide Schottky diode having forward conductance starting in the range approximately 0.2 to 0.4 volt comprising the steps of providing a body of n-type gallium arsenide single crystal having ''''n+'''' substrate doped to a level on the order of 1 X 1018 atoms cm 3, and on the substrate an epitaxial ''''n'''' layer with carrier concentration on the order of 1 X 1016 atoms cm 3, and depositing a layer of gold-germanium alloy into contact with said epitaxial layer while holding said body at a temperature below the eutectic of said alloy.

8. The method of claim 7 in which said body is held at a temperature between approximately 200* C. and 300* C.

9. Method of claim 7 in which during depositing of said alloy, said body is held at a temperature approximately room temperature, and after depositing is completed, said body is raised to a temperature between approximately 200* C. and 300* C. for approximately 1 minute.

10. The method of claim 9 in which said epitaxial layer is approximately 0.5 micrometer thick.

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Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy

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